5results about How to "Increase crystallization rate" patented technology

The invention discloses a heterojunction battery and a preparation method thereof. The preparation method comprises the steps of preparing the semiconductor substrate layer; preparing intrinsic amorphous silicon layers on two opposite surfaces of the semiconductor substrate layer respectively; depositing a doping layer on the intrinsic amorphous silicon layer; and manufacturing a transparent conductive layer on the doped layer. The preparation of the doping layer on the intrinsic amorphous silicon layer comprises the following steps: depositing a collection layer on at least one intrinsic amorphous silicon layer; a microcrystalline silicon layer is deposited on the collection layer, and carrier gas used in the process of depositing the microcrystalline silicon layer comprises argon. In this way, the deposition efficiency of the microcrystalline silicon layer and the photoelectric conversion efficiency of the heterojunction cell can be improved.

This disclosure discloses a P-type tunneling passivation structure and its preparation method, as well as a solar cell and its preparation method, belonging to the field of solar cell technology. The boron-doped polycrystalline silicon layer in the P-type tunneling passivation structure provided by this disclosure has a high crystallinity and better passivation effect, which is beneficial for improving carrier mobility, reducing contact resistance, and thus improving cell efficiency.

The application relates to the technical field of solar cells, and particularly discloses a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate, the silicon substrate comprises a front surface and a back surface, the front surface comprises a first laser contact area, a second laser contact area and a third laser contact area, the first laser contact area and the third laser contact area are alternately and spacedly arranged on the front surface of the silicon substrate; the second laser contact area and the first laser contact area are overlapped in a vertical direction, the width of the second laser contact area is smaller than that of the first laser contact area, the front surface further comprises a front surface metal electrode, the front surface metal electrode is in contact with the second laser contact area, and the crystallization rate of the second laser contact area is higher than that of a non-overlapping area in the first laser contact area. The solar cell has the advantages that the contact resistance of the metal grid line is reduced through gradient crystallization treatment, filling gain is brought, and the photoelectric conversion efficiency of the solar cell is further improved.

This invention relates to the field of N-type crystalline silicon solar cell manufacturing technology, specifically to a graded deposition LPCVD process for N-type cell passivation layers. The main steps include depositing a silicon-oxygen tunneling layer of 1.5–2.5 nm and graded deposition of the film layers. The graded deposition steps include: a first-stage deposition to obtain a polycrystalline silicon film of 90–150 nm with a crystallinity of 80–95%; a second-stage deposition to obtain a polycrystalline silicon film of 50–100 nm with a crystallinity of 60–80%; and a third-stage deposition to obtain a polycrystalline silicon film of 30–80 nm with a crystallinity ≤50%. This invention achieves polycrystalline silicon films with crystallization gradient characteristics by changing process parameters, such as pressure, temperature, and gas flow rate ratio, within the same deposition process. The crystallinity of polycrystalline silicon significantly affects the diffusion behavior of impurity atoms subsequently doped using methods such as boron diffusion and phosphorus diffusion. This technology can optimize film performance, meet specific process application requirements, and further improve cell performance.

The invention relates to the technical field of wafer manufacturing equipment, in particular to a heat shield radiation device for improving the crystallization rate of heavily doped red phosphorus single crystals, which comprises a support ring, an upper heat insulation material mounted at the top of the support ring, and an outer heat shield assembly mounted at the bottom of the support ring, the outer heat shield assembly comprises a heat shield outer cover and a heat shield inner cover, the heat shield outer cover and the heat shield inner cover are both of an annular structure and are connected with each other, a cavity is formed between the inner cover and the outer cover, and the cavity is filled with an inner heat insulation material; the heat shield inner cover is composed of an inner upper cover, an inner lower cover and an inner upper molybdenum cylinder, the inner upper cover and the inner upper molybdenum cylinder are both of a V-shaped structure, the inner upper molybdenum cylinder is arranged on the inner wall of the inner upper cover, and the inner lower cover is of a splayed structure and is in butt joint with the inner upper cover.