13results about How to "Increase crystallization rate" patented technology

The invention discloses a heterojunction battery and a preparation method thereof. The preparation method comprises the steps of preparing the semiconductor substrate layer; preparing intrinsic amorphous silicon layers on two opposite surfaces of the semiconductor substrate layer respectively; depositing a doping layer on the intrinsic amorphous silicon layer; and manufacturing a transparent conductive layer on the doped layer. The preparation of the doping layer on the intrinsic amorphous silicon layer comprises the following steps: depositing a collection layer on at least one intrinsic amorphous silicon layer; a microcrystalline silicon layer is deposited on the collection layer, and carrier gas used in the process of depositing the microcrystalline silicon layer comprises argon. In this way, the deposition efficiency of the microcrystalline silicon layer and the photoelectric conversion efficiency of the heterojunction cell can be improved.

The invention discloses a growth method for improving the crystal forming rate of indium phosphide single crystals, and belongs to the technical field of crystal growth. The multiple temperature zones are sequentially arranged in the heating furnace from top to bottom in the vertical direction in advance, the temperature of each temperature zone is decreased in a stepped mode, and in the growth process of crystals, the position of the boron nitride crucible is slowly decreased through the lifting system while each temperature zone is controlled to be decreased, so that the growth of the crystals is completed. Therefore, the purposes of effectively adjusting the uniformity of the temperature field and slowly lowering the position of the boron nitride crucible are achieved, slow growth of indium phosphide single crystals is achieved, dislocation can be greatly reduced, and the doping uniformity and the crystallization rate are improved. The technical problems that the indium phosphide single crystal is low in crystallization rate, high in crystal dislocation and uneven in carrier concentration and electron mobility distribution are effectively solved.

The invention provides low-alkalinity casting powder for peritectic alloy steel and a preparation method of the low-alkalinity casting powder, and belongs to the technical field of steelmaking metallurgy auxiliary materials. The invention relates to low-alkalinity casting powder for peritectic alloy steel. The low-alkalinity casting powder is prepared from the following raw materials in parts by weight: 5-8 parts of fluorite, 0-5 parts of wollastonite, 0-3 parts of sodium carbonate, 31-39 parts of manganese slag, 1-11 parts of limestone, 4.5-14 parts of glass powder, 2-5.5 parts of calcined aluminum ash, 4-8 parts of magnesium powder, 10-16 parts of manganese dioxide powder, 3-8 parts of zirconium oxide powder, 6-11 parts of a carbonaceous material and 2-3 parts of a binder. According to the peritectic alloy steel continuous casting covering slag, the casting blank quality of peritectic alloy steel is further improved, and the occurrence probability of microcracks is reduced.

This disclosure discloses a P-type tunneling passivation structure and its preparation method, as well as a solar cell and its preparation method, belonging to the field of solar cell technology. The boron-doped polycrystalline silicon layer in the P-type tunneling passivation structure provided by this disclosure has a high crystallinity and better passivation effect, which is beneficial for improving carrier mobility, reducing contact resistance, and thus improving cell efficiency.

The application discloses a device for preparing high-purity copper powder and polyaluminum chloride from acid etching waste liquid and an energy-saving co-production process thereof, relates to the technical field of recycling of acid etching waste liquid, and comprises a supporting base, a reaction assembly is arranged on the top of the supporting base, and the reaction assembly comprises a preparation tank body, a sealing cover and an extension rod. In the application, the top of the compression ring is connected with the extension rod and the guide piece, the top of the guide piece is overlapped with the adjusting block through the contact head, the reciprocating movement of the guide rod on the top of the supporting plate can be driven when the cam rotates, the lifting of the guide piece can be driven through the adjusting block, the use height of the compression ring and the guide disc is adjusted, the extrusion of the aluminum sheet is realized, the flow of the waste liquid in and out of the mixing tank is accelerated, the aluminum sheet is stirred through the stirring blade, and the aluminum sheet is fully contacted and reacted with the waste liquid; the filter screen is arranged in the filter box, copper powder in the waste liquid can be quickly separated, copper powder residues in the waste liquid are reduced, and the subsequent centralized recovery of the copper powder is facilitated.

The invention discloses a quartz crucible manufacturing method and a melting mold structure. The method comprises the following steps: connecting an inner layer of a mold with a middle portion outside an outer layer of the mold to form two relatively independent cavities, and connecting the two cavities to vacuum systems respectively. After quartz sand is formed on the inner surface of the mold, a first vacuum system is turned on to evacuate the first cavity. After the first cavity reaches dynamic equilibrium, arc heating is turned on to allow ionized heat to be quickly brought to the corresponding inner surface of the first cavity portion along with airflow. After the corresponding quartz sand in the first cavity is quickly melted to seal the port, a second vacuum system is turned on to evacuate the second cavity. After the sealing layer is formed for a predetermined time, the first vacuum system and the second vacuum system are turned off to continue to melt the opaque layer of the crucible until a predetermined size is reached to form a prefabricated quartz crucible, so that microbubbles in the transparent layer are reduced, thereby improving the quality of the transparent layer, increasing the life of the crucible, and increasing the crystallization rate.

The application relates to the technical field of solar cells, and particularly discloses a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate, the silicon substrate comprises a front surface and a back surface, the front surface comprises a first laser contact area, a second laser contact area and a third laser contact area, the first laser contact area and the third laser contact area are alternately and spacedly arranged on the front surface of the silicon substrate; the second laser contact area and the first laser contact area are overlapped in a vertical direction, the width of the second laser contact area is smaller than that of the first laser contact area, the front surface further comprises a front surface metal electrode, the front surface metal electrode is in contact with the second laser contact area, and the crystallization rate of the second laser contact area is higher than that of a non-overlapping area in the first laser contact area. The solar cell has the advantages that the contact resistance of the metal grid line is reduced through gradient crystallization treatment, filling gain is brought, and the photoelectric conversion efficiency of the solar cell is further improved.

The invention relates to the field of chemical engineering and material engineering, and provides a method for preparing high-purity magnesium oxide by taking ferronickel slag as a raw material, which comprises the following steps: (1) leaching: mixing ferronickel slag and sulfuric acid, leaching under normal-pressure heating and stirring conditions, and taking leachate after leaching; (2) primary crystallization: adding a seed crystal into the leachate, separating out coarse magnesium sulfate through primary crystallization, and carrying out solid-liquid separation to obtain coarse magnesium sulfate; (3) impurity removal: dissolving crude magnesium sulfate in water to obtain a magnesium sulfate crude solution, adding a neutralizing agent into the magnesium sulfate crude solution for neutralizing, hydrolyzing and removing impurities, and filtering to obtain a magnesium sulfate fine solution; (4) secondary crystallization: adding a seed crystal into the magnesium sulfate fine liquid for secondary crystallization to separate out high-purity magnesium sulfate; and (5) calcining: calcining the high-purity magnesium sulfate to obtain the high-purity magnesium oxide. The technology has the advantages of low equipment requirement, low production cost, high magnesium recovery rate, high magnesium oxide purity and high economic added value, and is convenient for industrial application.

The invention relates to a microwave heating device and process for eliminating thermal stress of a zone-melting silicon rod, which effectively eliminates the thermal stress of the zone-melting silicon rod after blowing out by adopting a microwave fine regulation and control type heating mode at a specific stage in the production and preparation process of the zone-melting silicon rod, and has the advantages of high heating speed, uniform heating, accurate control, safety, environmental protection and the like. The production cycle can be effectively shortened, the production cost is reduced, and the production efficiency and the product quality are improved.

This invention relates to the field of N-type crystalline silicon solar cell manufacturing technology, specifically to a graded deposition LPCVD process for N-type cell passivation layers. The main steps include depositing a silicon-oxygen tunneling layer of 1.5–2.5 nm and graded deposition of the film layers. The graded deposition steps include: a first-stage deposition to obtain a polycrystalline silicon film of 90–150 nm with a crystallinity of 80–95%; a second-stage deposition to obtain a polycrystalline silicon film of 50–100 nm with a crystallinity of 60–80%; and a third-stage deposition to obtain a polycrystalline silicon film of 30–80 nm with a crystallinity ≤50%. This invention achieves polycrystalline silicon films with crystallization gradient characteristics by changing process parameters, such as pressure, temperature, and gas flow rate ratio, within the same deposition process. The crystallinity of polycrystalline silicon significantly affects the diffusion behavior of impurity atoms subsequently doped using methods such as boron diffusion and phosphorus diffusion. This technology can optimize film performance, meet specific process application requirements, and further improve cell performance.

The invention relates to the technical field of heterojunction batteries, in particular to an annealing method for a heterojunction ITO film and an HJT battery, slurry drying and ITO film annealing are performed on a battery piece subjected to screen printing, the annealing temperature is 190-230 DEG C, the annealing pressure is 500-1000 Pa, nitrogen is filled for protection, and the nitrogen flow is 2000-3000 sccm. On the basis of an original heterojunction manufacturing process, a drying mode of filling dry gas at normal pressure in silk-screen printing is changed into a low-pressure nitrogen filling protection annealing mode, and a mode of annealing the ITO thin film by filling nitrogen at low pressure is utilized, so that the photoelectric characteristic of the ITO thin film is further improved, and the conversion efficiency of a heterojunction battery piece is improved.

The invention relates to the technical field of wafer manufacturing equipment, in particular to a heat shield radiation device for improving the crystallization rate of heavily doped red phosphorus single crystals, which comprises a support ring, an upper heat insulation material mounted at the top of the support ring, and an outer heat shield assembly mounted at the bottom of the support ring, the outer heat shield assembly comprises a heat shield outer cover and a heat shield inner cover, the heat shield outer cover and the heat shield inner cover are both of an annular structure and are connected with each other, a cavity is formed between the inner cover and the outer cover, and the cavity is filled with an inner heat insulation material; the heat shield inner cover is composed of an inner upper cover, an inner lower cover and an inner upper molybdenum cylinder, the inner upper cover and the inner upper molybdenum cylinder are both of a V-shaped structure, the inner upper molybdenum cylinder is arranged on the inner wall of the inner upper cover, and the inner lower cover is of a splayed structure and is in butt joint with the inner upper cover.

The present application provides a crystal pulling process control method, a single crystal silicon rod process control device and a crystal pulling system, the method comprising: constructing a multi-physical field coupling numerical model of silicon melt in a single crystal furnace, used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt; generating multiple characteristic parameters corresponding to the silicon melt under multiple process conditions and multiple magnetic field structure parameters according to a preset simulation method and the multi-physical field coupling numerical model, wherein the characteristic parameters are used to characterize the melt flow characteristics; determining target process conditions and target magnetic field structure parameters according to multiple characteristic parameters, multiple process conditions and multiple magnetic field structure parameters, and controlling the single crystal furnace to perform a crystal pulling process under the target process conditions and the target magnetic field structure parameters. The above method solves the problem in the prior art that the quality of the crystal cannot be guaranteed due to the Czochralski single crystal silicon rod growth process.