343results about How to "Increase crystallization rate" patented technology

The invention relates to a kind of microcrystalline glass and a preparation method thereof. The preparation raw materials include 10-90wt% of iron, vanadium and titanium-containing tailings, 5-50wt% of fluorite tailings, 1-50wt% of dolomite and 0-20wt% of soda ash. The preparation method of the microcrystalline glass comprises the following steps: uniformly mixing and fusing raw materials in proportion so as to obtain fused glass fluid; and shaping the fused glass fluid, then cooling the shaped glass fluid, and carrying out heat treatment on the obtained product so as to obtain the microcrystalline glass. The microcrystalline glass provided by the invention can be widely used for manufacturing high wear-resisting, acid and alkali erosion resistant and impact resistant products, and the performance of the microcrystalline glass is far higher than that of cast stone, thereby not only solving the pollution problem of tailings and manufacturing high-technical-content and high value-added products.

The invention discloses a manufacturing method of a polycrystalline silicon layer and a polycrystalline silicon thin film transistor and a manufacturing method thereof, and relates to the field of displaying. According to the manufacturing methods, a crystallization rate of a formed polycrystalline silicon layer is high, crystalline grains are uniform, crystal boundary defects are little, thus electrics properties of the polycrystalline silicon thin film transistor can be improved, and reliability of the polycrystalline silicon thin film transistor is improved. The manufacturing method of the polycrystalline silicon layer includes the steps that a substrate is provided; a barrier layer and a buffer layer are sequentially formed on the substrate; multiple groves are arranged in the buffer layer through a picture composition process, and seed crystals are formed on the buffer layer; an amorphous silicon layer is formed on the buffer layer provided with the grooves and the seed crystals; and the amorphous silicon layer is converted into the polycrystalline silicon layer through adoption of a heating processing process. The manufacturing method of the polycrystalline silicon layer and the polycrystalline silicon thin film transistor and the manufacturing method of the polycrystalline silicon thin film transistor are used for improving quality of polycrystalline silicon films.

Methods for enhancing the rate of a first biodegradable polyhydroxyalkanoate having a copolymer, or a blend thereof, of at least two randomly repeating monomer units, and has a melting point Tm1, by solution blending or melt blending the first biodegradable polyhydroxyalkanoate with a second crystallizable biodegradable polyhydroxyalkanoate homopolymer or copolymer, which has at least one randomly repeating monomer unit and a melting point Tm2, wherein Tm2 is at least about 20□C. greater than Tm1. Methods for forming shaped articles from the blending of the two polyhydroxyalkanoates.

A thermoplastic-resin-coated metal sheet in which the thermoplastic resin has been applied to the metal sheet without through an adhesive primer and which, even after having been formed into a can, is excellent in impact resistance at low temperatures and resistance to corrosion by acid contents; and a can obtained from the coated metal sheet. The thermoplastic-resin-coated metal sheet is obtained by coating a metal sheet with a thermoplastic resin composition comprising a blend of a polyester resin with a polyolefin resin or polyolefin elastomer. This metal sheet is formed into a can through drawing/ironing with thickness reduction.

The invention discloses a method for preparing a hydrogenated silicon film by utilizing magnetron sputtering. The method comprises the following steps, pretreating a substrate and placing the substrate in a magnetron sputtering filming device; utilizing a plane Si target as a source of Si element; adjusting the power of an intermediate frequency pulse power supply to control the sputtering rate ofthe Si target; utilizing high-purity Ar gas as main ionization gas, and ensuring the effective glow discharge process; and adopting high-purity H2 gas as reaction gas, ionizing the H2, and combiningthe H2 with the Si element, forming the hydrogenated silicon film on the surface of the substrate through deposition, and annealing the film at the temperature of 550 DEG C to 950 DEG C in vacuum to obtain the nano-crystalline/non-crystalline composite structure. The invention achieves regulation and control to microstructure of the hydrogenated silicon film by changing introduction proportion ofhydrogen so as to further change the photoelectric properties of the film. The preparation method is simple and reliable, and the prepared hydrogenated silicon film is hopeful to be applied to solar batteries.

The invention discloses a recycling process of a copper-containing etching waste solution. The recycling process comprises the following steps: removing mechanical particles and arsenic in an alkalinewaste solution by virtue of magnesium chloride, PAM and a press filtering machine, removing the mechanical particles and oil contaminants in an acid waste solution by virtue of a press filtering machine, neutralizing the acid waste solution and alkaline waste solution to obtain alkaline copper chloride, or acidifying by using sulfuric acid to obtain copper sulfate; and when the alkaline waste solution is insufficient, introducing ammonia gas into the acid waste solution with the mechanical particles and the oil contaminants removed by virtue of the press filtering machine, adjusting the solution to be alkaline, and then performing the neutralization reaction to obtain alkaline copper chloride or copper sulfate. The comprehensive recycling process is simple, low cost, capable of massivelytreating the etching waste solution, and capable of recycling the copper and realizing the safety up-to-standard treatment of the etching waste solution.

The invention relates to the crucible manufacturing field and is a process for producing an arc quartz crucible by vacuum plus coating, equipment, products thereof. The invention solves the problems that the crucible manufacturing process in the prior art can not solve the operating requirements of long time, high temperature, and high purity of the quartz crucible, a uniform high purity quartz layer can not be formed in the vacuum state by uniform spraying, the layered spraying can not be accurately and timely carried out, and the like; therefore the process and the equipment for producing the arc quartz crucible by vacuum plus coating are provided; the quartz sand is poured into a vacuum mould to shape a prebuilt shape which is put into a founded chamber; a vacuum pump is started and the temperature is controlled, and then the melting and preheating begin; by controlling two hoppers of a double-hopper charging machine, the high-purity quartz sand is sprayed into the quartz crucible in the process of melting, and then mixing spraying coating is sprayed; the vacuum pump is closed during keeping the temperature. The quartz crucible produced by the process and the equipment of the invention has strong non-deformability of long time and exhaustion resistance in high temperature and can be used for long time.

The invention provides a novel glass lubricant of a stainless steel extruded tube. The lubricant is composed of three glasses of a novel glass formulation including exterior coating powder GW8, interior coating powder GN26 and a glass pad GD19 which are respectively acted on a roller coating or spraying coating phase, a broaching phase and an extrusion phase. Compared with the traditional like products, the lubricant provided by the invention has better protecting and lubricating properties. Through utilizing the product provided by the invention, the surface defects of the stainless steel are fewer and the grinding rate can be obviously reduced.

The invention relates to a continuous crystallizer mainly used for concentrative crystallization in monosidum glutamate production of food industry, which comprises a crystallizer (3), a raw liquid and mother liquid mixing tank (1), a feeding pump (2), a plate type heater (14), an outer circulating pump (11), a heater (5), an inner circulating pump (4) and a discharging pump (10), wherein the raw liquid and mother liquid mixing tank (1) is connected with the feeding pump (2) connected with the plate type heater (14) which is communicated with the outer circulating pump (11), the outer circulating pump (11) is connected with the heater (5) communicated with a circulated flow returning port (3.2) of the crystallizer (3), and an circulated discharging port (3.18) of the crystallizer (3) is communicated with the outer circulating pump (11); the inner circulating pump (4) is arranged at the bottom of the crystallizer (3); and an outlet of the discharging pump (10) is respectively connected with a crystal paste circulating port (3.11) of the crystallizer (3) and a crystallization-assistant slot (8). The continuous crystallizer has the characteristics of low steam consumption, high equipment yield, high degree of the automation and the like.

A forming method of a fin-type field effect transistor comprises the steps that a semiconductor substrate is provided; a fin portion is formed on the surface of the semiconductor substrate, wherein the fin portion comprises a channel area located between source and drain areas at the two ends of the fin portion; the source and drain areas of the fin portion are etched to enable the height of the source and drain areas to be reduced; non-crystalline silicon layers are formed on the surfaces of the etched source and drain areas; annealing is conducted on the non-crystalline silicon layers to form polycrystalline silicon layers, wherein the polycrystalline silicon layers generate pull stress to the channel area of the fin portion. By means of the method, the migration rate of electrons in a channel of the fin-type field effect transistor can be increased, and the performance of the N-shaped fin type field effect transistor can be improved.

Disclosed is a method for separating and recycling selenium and tellurium from copper anode mud. The method includes: performing soda sintering on the copper anode mud or copper-removed anode mud obtained after copper removing is performed on the copper anode mud, adding water into the sintered material for leaching, and filtering to obtain selenium-rich leachate and tellurium-rich leach residues; subjecting the selenium-rich leachate to sodium carbonate separating and recycling, using sodium sulfite or SO2 to revivify and recycle selenium in the selenium-rich leachate or filtrate, filtering to obtain rough selenium powder, and further refining the rough selenium powder to obtain metal selenium; leaching the tellurium-rich leach residues via a sulfuric acid solution, filtering to obtain acid leachate and acid leach residues; subjecting the acid leachate to silver separating through chlorination, using sodium sulfite or SO2 to revivify and precipitate tellurium in the chlorinated acid leachate, filtering to obtain rough tellurium powder, and further refining the rough tellurium powder to obtain metal tellurium. The method has the advantages that by the integral redesign of the process and the mutual cooperation of the steps, the process route for separating and recycling the selenium and the tellurium from the copper anode mud is simplified greatly, environmental protection pressure during a copper anode mud processing process is alleviated greatly, and the method conforms to the development tendency of energy saving and emission reduction technical transformation; the method is simple in process, simple to operate, low in production cost, high in selenium and tellurium recycling rate, good in working environment, suitable for industrialized application, and the like.

The invention discloses a glutamic acid separating and extracting technology. The technology is characterized in that glutamic acid in the isoelectric point liquid of glutamic acid is separated and extracted through adopting an ion exchange method, an acid solution not an alkali solution is directly used to elute for generation after the ion exchange resin adsorption of the glutamic acid, and an eluate obtained after the ion exchange returns to an isoelectric operation for glutamic acid extraction. Compared with traditional technologies, the technology disclosed in the invention has the advantages of saving of a large amount of an acid and an alkali, reduction of the production cost and the environmental pollution, and economic benefit improvement.

A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range

The invention discloses a production process of poly-crystal rocky candy. The production process comprises the following six steps: by taking first-grade white sugar as a raw material, dissolving the sugar, micro-filtering and clarifying, desalting and decolorizing by using ion exchange resin, concentrating in vacuum, charging seeds for crystallization, drying and packaging to produce the poly-crystal rocky candy. The poly-crystal rocky candy produced by the method disclosed by the invention is sweet and delicious in taste and white and transparent in color and luster; no sodium hydrosulfite is added for color protection during the overall production, so the product is environmental friendly and safe; the crystallization rate of the rocky candy is above 95%; the problem of low crystallization rate during production of the poly-crystal rocky candy for a long time is solved.

The invention provides a method for improving a crystallizing rate of reused monocrystal silicon. Silicon material is fed into a crucible via a refeeding cylinder, when a liquid level of the silicon material in the crucible is a certain distance higher than a round corner of the bottom of the crucible, a few grams of barium carbonate are put into the crucible via the refeeding cylinder, and then the silicon material is continuously put into the crucible via the refeeding cylinder. In the method, silicon dioxide is exposed after the crucible is corroded, after barium carbonate powder is fed, barium oxide is generated after heating, the barium oxide reacts with silicon dioxide to generate BaSiO3; due to existence of barium metasilicate, a layer of compact and tiny cristobalite crystals is formed on the wall of the quartz crucible, and thus a corrosion degree of the quartz crucible corroded by solution is relieved; meanwhile, the cristobalite crystals are formed in needle holes, so that foreign gases entering silicon solution are reduced, and the purpose of directly improving the crystallizing rate of the monocrystal silicon after reusing is achieved.

The invention relates to a vinpocetine special-purpose crystallization pot, which contains a pot rack, a pot and a stirring device. The pot contains a pot body and a cover. The bottom of the pot body is provided with a discharge hatch which is equipped with a discharged valve. A feed inlet is disposed on the cover. The periphery of the pot body is provided with an insulation jacket with a steam inlet and a condensed water outlet. The crystallization pot also contains a condensation coil pipe disposed inside the pot body. The condensation coil pipe is equipped with a condensate liquid inlet and a condensate liquid outlet which extend out through the pot. According to the crystallization pot, the condensation coil pipe is arranged inside the pot. As the condensation coil pipe directly contacts with a material, the heat transfer efficiency is highest, and the material can be rapidly cooled. Therefore, the vinpocetine crystallization rate can be raised and the crystallization efficiency can be improved. In addition, the invention is simple to arrange and convenient to operate.

The present invention provides a glass fiber composition, a glass fiber and a composite material therefrom. The glass fiber composition comprises the following components expressed as percentage by weight: 58-64% SiO2, 14-19% Al203, ≧8.8% and <11.8% CaO, 7.5-11% MgO, 0.2-2.7% SrO, 0.1-2% Na2O+K2O, 0.05-0.9% Li2O, 0.05-1% Fe2O3, 0.05-1.1% TiO2 and <0.5% F2, wherein the range of the weight percentage ratio C1=(MgO+SrO)/CaO is 0.75-1.1, and the range of the weight percentage ratio C2=CaO/MgO is less than 1.4. Said composition can effectively inhibit the crystallization tendency of glass, significantly decrease the liquidus temperature and crystallization degree of glass and also has an outstanding glass refractive index and outstanding modulus.

The invention relates to a method for producing high-quality copper sulfate through low-pressure oxygen leaching of copper slag. A copper-bearing material with metallic copper or cuprous oxide content greater than 15wt% serves as a raw material, and the method comprises the steps of copper slag or spongy copper slag pickling of zinc hydrometallurgy. A dilute sulphuric acid solution is adopted for low-pressure oxygen leaching of the raw material, an obtained leachate is subjected to combined crystallization including cooling crystallization and salting-out crystallization, a copper sulfate crystal is obtained after liquid-solid separation, and dried after multistage washing, and copper sulfate meeting requirements of above a premium grade specified in YS/T 94-2007 is obtained.