Method for improving axial resistivity uniformity of single crystal with heavily doped Ar

A technology of resistivity and uniformity, which is applied in the field of improving the axial resistivity uniformity of heavily doped arsenic single crystals, can solve problems such as compositional overcooling, polycrystalline breakage, material waste, etc., to reduce the concentration, reduce the possibility, The effect of increasing the crystallization rate

Active Publication Date: 2011-08-24
内蒙古中环领先半导体材料有限公司 +1
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Problems solved by technology

[0003] The result of the above phenomenon is: due to the difference in the axial resistivity of single crystals, a single crystal will be partially out of gear, and only a part meets the production requirements, resulting in waste of materials
At the same time, due to the precipitation of dopants at the solid-liquid interface, the dopant concentration in the diffusion layer is higher than that in both the solid phase and the liquid phase. crystallization

Method used

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Embodiment Construction

[0024] In order to understand the present invention more clearly, describe the present invention in detail in conjunction with embodiment:

[0025] Embodiment: In order to achieve the purpose of improving the uniformity of axial resistivity of heavily doped arsenic single crystal, the present invention adopts the process method of adjusting furnace pressure and Ar gas flow rate according to the growth progress of silicon single crystal, and controls dopant by controlling furnace pressure The volatilization rate of As (at the same temperature, the saturated vapor pressure of the solute in the multi-component system is constant; the smaller the external pressure, the greater the volatilization of the solute, and vice versa), so that the excess As doped from the diffusion layer The dopant volatilizes into the atmosphere and is taken away from the furnace by the As gas, so that the concentration of the dopant As in the melt can be maintained in a relatively stable range.

[0026] ...

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Abstract

The invention relates to a method for improving axial resistivity uniformity of a single crystal with heavily doped Ar. The method comprises the following steps in sequence: (1) regulating furnace pressure along with the growth of a silicon single crystal: gradually decreasing the furnace pressure along with the growth of the single crystal from the maximum 70torr to the minimum 10torr; and (2) regulating Ar gas flow at the same time of executing the step (1): gradually increasing the Ar gas flow to the maximum 80slpm from the minimum 20slpm. The method has the advantages that the axial resistivity uniformity of the single crystal with heavily dope Ar is improved, wherein (rhomax-rhomin) / rhomin is smaller than 28%; the concentration of the doping agent Ar of a diffusion layer is reduced; the probability of the occurrence of a composition process is decreased; and the crystal forming rate is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor silicon single crystal production, in particular to a method for improving the axial resistivity uniformity of heavily doped arsenic single crystal. Background technique [0002] A certain amount of dopants are often added in the production of semiconductor silicon single crystal to meet the requirements of its electrical properties. Common dopants include: boron, phosphorus, arsenic and antimony. Due to the segregation phenomenon of dopants at the solid-liquid interface of silicon single crystal growth, due to the segregation coefficient k 0 =C s / C l <1 (C s is the concentration of dopant in the solid phase, C l is the concentration of the dopant in the liquid phase), that is, the solubility of the dopant in the solid phase is less than its solubility in the liquid phase, so a part of the dopant in the solid phase will be precipitated at the solid-liquid interface of crystal growth ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/04C30B15/20C30B29/06
Inventor 张雪囡康冬辉李建弘徐强沈浩平
Owner 内蒙古中环领先半导体材料有限公司
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