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Method for improving crystallizing rate of reused monocrystal silicon and material block for feeding barium carbonate

A technology of crystal formation rate and barium carbonate, which is applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of surface damage, achieve the effect of preventing damage, eliminating sparking, and ensuring crystal formation rate

Active Publication Date: 2017-12-12
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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Problems solved by technology

[0003] In view of this, the present invention aims to propose a method for improving the crystallization rate of re-invested monocrystalline silicon and a block for adding barium carbonate, so as to solve the problem of surface damage of the crucible caused by a long time during the existing crystal pulling production

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  • Method for improving crystallizing rate of reused monocrystal silicon and material block for feeding barium carbonate

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Embodiment Construction

[0018] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0019] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the invention. In addition, the terms "first", "second", etc. are used for descriptive purposes only, and should not be understood ...

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Abstract

The invention provides a method for improving a crystallizing rate of reused monocrystal silicon. Silicon material is fed into a crucible via a refeeding cylinder, when a liquid level of the silicon material in the crucible is a certain distance higher than a round corner of the bottom of the crucible, a few grams of barium carbonate are put into the crucible via the refeeding cylinder, and then the silicon material is continuously put into the crucible via the refeeding cylinder. In the method, silicon dioxide is exposed after the crucible is corroded, after barium carbonate powder is fed, barium oxide is generated after heating, the barium oxide reacts with silicon dioxide to generate BaSiO3; due to existence of barium metasilicate, a layer of compact and tiny cristobalite crystals is formed on the wall of the quartz crucible, and thus a corrosion degree of the quartz crucible corroded by solution is relieved; meanwhile, the cristobalite crystals are formed in needle holes, so that foreign gases entering silicon solution are reduced, and the purpose of directly improving the crystallizing rate of the monocrystal silicon after reusing is achieved.

Description

technical field [0001] The invention belongs to the technical field of Czochralski single crystal silicon, and in particular relates to a process method for improving the crystallization rate of Czochralski single crystal silicon after reinvestment. Background technique [0002] The inner surface of the quartz crucible used in the Czochralski single crystal thermal field is all coated with barium. That is, the inner wall of the quartz crucible is coated with a layer of barium hydroxide (Ba(OH)2.8H2O) (saturated barium hydroxide aqueous solution) containing crystal water, and this layer of barium hydroxide will react with carbon dioxide in the air to form barium carbonate, while When this quartz crucible is heated on a single crystal furnace, barium carbonate will decompose to form barium oxide, and as barium oxide reacts with the quartz crucible to form barium silicate (BaSiO3), due to the presence of barium silicate, the quartz crucible wall Form a layer of dense and tiny ...

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Application Information

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IPC IPC(8): C30B15/02C30B29/06
CPCC30B15/02C30B29/06
Inventor 霍志强马国瑞刘有益杨瑞峰王凯吴若林梁山贾海洋谷守伟
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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