3results about How to "Increase the bandgap" patented technology

The application discloses a compression-torsion coupling mechanism and a phononic crystal damping device with adjustable band gap, and belongs to the technical field of phononic crystal damping. The compression-torsion coupling mechanism comprises two plastic elastic plates arranged oppositely, the two plastic elastic plates are connected through a plurality of connecting rods, the connecting rods are connected with the corresponding plastic elastic plates through spherical hinges at two ends, electromagnetic coils are arranged on opposite surfaces of the two plastic elastic plates, the two electromagnetic coils are respectively connected with power supplies, and holes matched with tubular target structures are arranged on the plastic elastic plates. The phononic crystal damping device with adjustable band gap comprises a plurality of sleeves, the plurality of sleeves are used for being regularly and intervalled on the tubular target structure, at least one compression-torsion coupling mechanism is arranged between the two sleeves, the compression-torsion coupling mechanism is convenient to design and manufacture, the installation spacing of the phononic crystal damping unit can be changed through remote and reversible electromagnetic driving, and therefore the effect of adjustable band gap is achieved, and the operation is simple.

The application relates to a quantum dot preparation method and belongs to the technical field of quantum dot materials. The quantum dot preparation method comprises the following steps: dispersing original core quantum dots in a nonpolar solvent I to obtain original core quantum dot suspension I; mixing the original core quantum dot suspension I with a polar solvent containing doped cations to transfer the original core quantum dots to the polar solvent to obtain original core quantum dot suspension II; adding nonpolar solvent II and ligand solvent into the original core quantum dot suspension II to transfer the original core quantum dots to the nonpolar solvent II to obtain ligand-exchanged original core quantum dot suspension III; and mixing dispersing solvent, doped cation precursor solution and the original core quantum dot suspension III to perform cation exchange. The application cooperates the pretreatment process of ligand exchange with the liquid-phase cation exchange process, and tunes the optical performance of the core quantum dots.

The invention belongs to the technical field of semiconductor devices, and particularly discloses a high-electron-mobility transistor with an InGaN insertion layer and a double-barrier cap layer and a preparation method of the high-electron-mobility transistor. The high-electron-mobility transistor comprises a substrate, a nucleating layer, an AlGaN gradient buffer layer, a GaN channel layer, an InGaN insertion layer, an AlGaN barrier layer, a barrier protection layer, a double-barrier cap layer (an AlGaN layer, a GaN layer and an AlGaN layer) and a gate electrode which are sequentially arranged in a contact mode. Ohmic contact regions are arranged on the two sides of the AlGaN barrier layer and the barrier protection layer respectively and are electrically connected with the source electrode and the drain electrode respectively. By introducing the specific epitaxial layer combination and doping design, the distribution and control of two-dimensional electron gas are optimized, the confinement to electrons is increased, the output characteristic of the device is improved, the current collapse effect is inhibited, the leakage current is reduced, and the threshold voltage stability and switching characteristic of the device are improved.