Method for forming semiconductor laser and spot-size converter by once epitaxy

Abstract

Disclosed a method for one time extension forming the semiconductor laser and mode spot switch comprises following steps: (1), on the N type indium phosphide substrate, extending growing the N type indium phosphide breaker, a lower waveguide layer, a 2.4 ª–m indium phosphide space layer, a lower light-limited layer of active region, a compression strain quanta active region, a upper light-limited layer, a P type indium phosphide envelope, and a high doping P type indium gallium arsenide ohmic electrode contract layer; (2), utilizing the wet corrosion process to etch the upper carinate shape of laser and mode spot switch; (3) utilizing the auto-alignment process to etch the lower carinate shape; (4), growing the SiO2 insulating layer and opening a electrode window; (5) decreasing the substrate of extended plate to 100 ª–m, and manufacturing P / N electrodes to be scribed into the tube core of 250í‡600ª–m.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor laser and a mode spot converter by means of one epitaxy by one-time LP-MOVPE by using common wet etching and photolithography technology. Background technique [0002] Most modules in optical fiber communication systems are composed of III-V compound semiconductor devices. Each semiconductor device must be connected to at least one optical fiber, so the coupling efficiency between the semiconductor optoelectronic device and the optical fiber is very important. For ordinary glass optical fibers, the refractive index difference between the core layer and the cover layer is very small, generally 5×10 -3 the following. Such a waveguide structure belongs to a weak guiding waveguide, and the distribution of its intrinsic light field is quite diffuse, that is, the intrinsic light spot is relatively large, with a diameter of about 8-10 μm. In III-V compound semiconductors, if the refractive...

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Problems solved by technology

The three mode spot converters have their own advantages and disadvantages: the thickness of the vertical wedge-shaped waveguide changes gradually from the active area to the output end face

[0005] Although there are many reports on monolithic integrated devices of lasers and speckle converters in the world, the following disadvantages generally exist: 1) Both lasers and speckle converters use buried structures, and the number of epitaxy is many (some as high as 6-7 times), The process is complex and the reliability of the device is low

2) The mode spot converter adopts vertical wedge shape, adopts butt-joint SAG (that is, selective docking) epitaxy technology or gradual corrosion process, the interface treatment is very difficult, it is easy to excite multi-mode at the interface, and the mode characteristics deteriorate. At the same time, the device is manufactured Poor repeatability and small process tolerance

3) Although some lasers and speckle converters both use a dual-waveguide structure, one of them still uses a buried structure, and there are also problems such as many epitaxy times and complex processes.

4) Some use the alternate growth of InP and InGaAsP for the lower waveguide in the double waveguide structure to obtain the effective refractive index they need. The growth period is as many as 20 pairs, and the growth is difficult

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