176 results about "Indium gallium arsenide" patented technology

Methods and systems for encoding multi-level pulse amplitude modulated signals using integrated optoelectronics are disclosed and may include generating a multi-level, amplitude-modulated optical signal utilizing an optical modulator driven by two or more electrical input signals. The optical modulator may include optical modulator elements coupled in series and configured into groups. The number of optical modular elements and groups may configure the number of levels in the multi-level amplitude modulated optical signal. Unit drivers may be coupled to each of the groups. The electrical input signals may be synchronized before communicating them to the unit drivers utilizing flip-flops. Phase addition may be synchronized utilizing one or more electrical delay lines. The optical modulator may be integrated on a single substrate, which may include one of: silicon, gallium arsenide, germanium, indium gallium arsenide, polymers, or indium phosphide. The optical modulator may include a Mach-Zehnder interferometer or one or more ring modulators.

Si-doped porous GaN is fabricated by UV-enhanced Pt-assisted electrochemical etching and together with a low-temperature grown buffer layer are utilized as the template for InGaN growth. The porous network in GaN shows nanostructures formed on the surface. Subsequent growth of InGaN shows that it is relaxed on these nanostructures as the area on which the growth takes place is very small. The strain relaxation favors higher indium incorporation. Besides, this porous network creates a relatively rough surface of GaN to modify the surface energy which can enhance the nucleation of impinging indium atoms thereby increasing indium incorporation. It shifts the luminescence from 445 nm for a conventionally grown InGaN structure to 575 nm and enhances the intensity by more than two-fold for the growth technique in the present invention under the same growth conditions. There is also a spectral broadening of the output extending from 480 nm to 720 nm.

A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.

The invention relates to a method for doping carbon in the gallium arsenide by using a silica tube for growing semi-insulated gallium arsenide. The method comprises the following steps: step 1: polycrystally synthesizing 7N Ga and 7N As to form a GaAs polycrystal; step 2: putting the synthesized GaAs polycrystal, seed crystal and B2O3 in a PBN crucible; step 3: putting the PBN crucible in a quartz body of the silica tube; step 4: fixing pure graphite in a silica groove on a silica cap of the silica tube; step 5: covering the quartz body and the silica cap, vacuumizing and welding the quartz body and the silica cap of the silica tube on oxyhydrogen flame; step 6: putting the welded silica tube in a VGF single crystal furnace for atmosphere doping and single crystal growth; and step 7: soaking the PBN crucible in methanol after the single crystal growth to obtain a GaAs single crystal and finish the preparation of the GaAs single crystal.

The invention relates to a preparation method of gallium arsenide thin-film multijunction stacked solar cells. The preparation method is characterized by including the steps of firstly, allowing for reverse growth of an epitaxial layer to prepare a GaAs three-junction solar cell; secondly, bonding the cell prepared in the step 1 to a Si substrate; thirdly, stripping a Ge substrate; fourthly, adhering a low-cost substrate; and fifthly, stripping the Si substrate. The preparation method allows for epitaxial growth of a top cell and an intermediate cell prior to growth of a bottom cell, and accordingly the lattice subjected to epitaxial growth firstly is guaranteed to match with perfect epitaxial growth of the top cell and the intermediate cell; doping uniformity and film reliability in large-area epitaxial thin films are increased, and photoelectric conversion efficiency is further improved; by the use of the low-cost support substrate lower than Ge in specific weight, the weight of the cells is reduced, the power ratio of the solar cells is increased, the cost of the cells is reduced effectively, and application prospect of the III-V compound solar cells is improved greatly.

Epitaxial growth of gallium arsenide (GaAs) on a semiconductor material (e.g., Si) using quasi-van der Waals Epitaxy (QvdWE). Prior to GaAs growth a buffer layer (e.g., graphene) is deposited which relieves lattice mismatch/thermal expansion. The low energy of the graphene surface and the GaAs/graphene interface is overcome through an optimized growth technique to obtain an atomically smooth low-temperature GaAs nucleation layer. The disclosure can be applied to optimize epitaxial thin film growth of other materials, (e.g., III-V semiconductors, such as InP, GaSb) on Si using van der Waals buffer layers such as graphene.

Disclosed a method for one time extension forming the semiconductor laser and mode spot switch comprises following steps: (1), on the N type indium phosphide substrate, extending growing the N type indium phosphide breaker, a lower waveguide layer, a 2.4 ª–m indium phosphide space layer, a lower light-limited layer of active region, a compression strain quanta active region, a upper light-limited layer, a P type indium phosphide envelope, and a high doping P type indium gallium arsenide ohmic electrode contract layer; (2), utilizing the wet corrosion process to etch the upper carinate shape of laser and mode spot switch; (3) utilizing the auto-alignment process to etch the lower carinate shape; (4), growing the SiO2 insulating layer and opening a electrode window; (5) decreasing the substrate of extended plate to 100 ª–m, and manufacturing P/N electrodes to be scribed into the tube core of 250í‡600ª–m.

The invention discloses an RTD diode of an indium gallium nitride emitting electrode ohmic contact layer and a manufacturing method thereof. The diode comprises a GaN epitaxial layer, an n+GaN collector electrode ohmic contact layer, a first GaN separating layer, a first InA1N barrier layer, a GaN main quantum well layer, a second InA1N barrier layer, an InGaN separating layer, an n+InGaN emitting electrode ohmic contact layer, a circular electrode, an annular electrode which is arranged above the n+GaN collector electrode ohmic contact layer and is not contacted with the first GaN separating layer and an A1N passivation layer located above the n+GaN collector electrode ohmic contact layer. The emitting electrode ohmic contact layer of the diode adopts an InGaN material so that a peak value current is increased and output power is increased too. In a diode manufacturing method, the InGaN is grown and then a high temperature technology is not needed, In precipitation does not exist and electric leakage of a device is reduced.

Disclosed a method for utilizing the dual-waveguide technology to manufacture the semiconductor laser and mode spot switch comprises following steps: on the N type indium phosphide substrate, sequentially extending growing the N type indium phosphide breaker, a lower waveguide layer, a space layer, a active region, and a thinner indium phosphide intrinsic layer, wherein, the indium phosphide intrinsic layer can prevent the oxidation of active region; removing the highest indium phosphide intrinsic layer, partly covering the laser with SiO2, and utilizing the wet corrosion process to etch the upper carinate shape of mode spot switch; utilizing the auto-alignment process to etch the lower carinate shape which comprises a lower waveguide layer, a space layer, a second growth P type indium phosphide coating layer, and a high doping P type indium gallium arsenide ohmic electrode contract layer; utilizing the SiO2 to partly cover the mode spot switch and etching the upper and lower carnate shapes again while the upper carinate shape comprises a active region, a P type indium phosphide coating layer and a high doping P type indium gallium arsenide ohmic electrode contract layer; and decreasing the substrate of extended plate to 100 ª–m, and manufacturing P/N electrodes to be scribed into the tube core of 250í‡500ª–m.

The invention relates to a wafer-level chip size encapsulation technology for a GaAs (gallium arsenide) CCD (Charge Coupled Device) image sensor. The technology is characterized by comprising the following steps of: (1) firstly bonding a glass wafer and a GaAs wafer through a resin adhesive so as to protect the active surface of a chip and improve the strength of a chip wafer; (2) manufacturing a trapezoidal-slot structure by a wet corrosion or physical method so as to reduce the lining thickness of a chip interconnection area; (3) manufacturing vertical interconnected through holes by a dry etching technology so as to expose a pad on the active surface of the chip; (4) sputtering seed-layer metal and electroplating, and manufacturing a hole metalizing and RDL layer to realize circuit interconnection from the active surface to the back surface of the chip; (5) manufacturing a passivation layer, a UBM layer and raised points; and (6) finally scribing to form an independent encapsulation chip. As the trapezoidal-slot structure on the back realizes thickness reduction only in the area with the pad, the cost is effectively lowered; and through the interconnection of the vertical through holes, the encapsulation interconnection density can be improved, and the signal transmission path is shortened.

The invention of light guide ultraviolet sensor consists of pure gallium oxide light filter, indium gallium oxide ultraviolet sensitive film, crossing electrode and insulating substrate from up to down. The ultraviolet sensor uses pure gallium oxide light filter as filtration layer, indium gallium oxide as ultraviolet sensitive layer, which can filter light whose wavelength is smaller than 240mm and make the probe only be sensitive to the light within sun blind area wavelength range. Besides, because of crossing electrode under sensitive film whose surface square receiving light is large, influence of crossing electrode in common light guide probe on surface square receiving light is avoided, resulting high sensitivity. The invention has the advantages of simple structure, high sensitivity and low cost.

The invention discloses a method for manufacturing a planar indium gallium arsenic infrared detector chip with an extended wavelength. According to a traditional PIN type indium gallium arsenic infrared detector, the quantum efficiency of the indium gallium arsenic infrared detector in the visible light band is limited due to absorption of an indium phosphide cap layer or absorption of a substrate. An indium gallium arsenic epitaxial material manufacuring device with a barrier layer is used in the method and coupled with a reading circuit after manufacturing of a detector array device, the substrate is thinned through the wet method and dry method combination technology, and the quantum efficiency of the device in the visible light band is improved. In addition, the planar indium gallium arsenic infrared detector chip manufactured through the novel method achieves wavelength extension, and meanwhile can also keep the quantum efficiency and dark current equivalent to those of the traditional indium gallium arsenic infrared detector at the regular band.

The invention relates to a method for manufacturing a lattice graded buffer layer, which comprises the following steps of: (1) using a commercial germanium single crystal, arsenide gallium single crystal or indium phosphide single crystal as a substrate; (2) epitaxially forming a layer of material in lattice matching with the substrate material as a nucleation layer by utilizing epitaxial technology; (3) epitaxially growing a lattice graded layer on the nucleation layer until the lattice of the material of a top layer has an ideal lattice constant or a lattice constant slightly lower than theideal lattice constant, wherein the lattice graded layer consists of a plurality of indium gallium arsenide materials with gradually increased components; (4) epitaxially forming a layer of indium gallium arsenide material with the lattice constant more than the ideal lattice constant on the lattice graded layer as a lattice overshoot layer; and (5) epitaxially forming a layer of material which has the lattice constant equal to the ideal lattice constant and is the same as that grown on an adjacent upper layer thereof as the lattice buffer layer. The method solves the problem of influence of device appearance degradation caused by lattice mismatching between a conventional epitaxial material and the substrate, and can effectively control threading dislocation density on the surface of a device.

The utility model relates to a growth method of a THz quantum stage linked semiconductor laser material, which is characterized in comprising the following growth steps: step 1: A semiinsulating gallium arsenide substrate is adopted; step 2: N-shaped ohmic contact layer under the gallium arsenide is grown on the semiinsulating gallium arsenide substrate via the use of the molecular rays epitaxial technique to make a lower ohmic electrode; step 3: An active area is grown on the lower ohmic contact layer to form a luminous zone; step 4: An N-shaped gallium arsenide upper ohmic contact layer is grown on the active area to make a lower ohmic electrode to accomplish the growth of the THz quantum stage linked semiconductor laser material.

The invention discloses a method for growing indium arsenide/indium gallium arsenide quantum well material on an indium phosphide substrate. The method comprises the following steps of: 1, selecting the substrate; and 2, sequentially growing a buffer layer, a lower waveguide layer, a dual-quantum well structure, an upper waveguide layer and a cover layer to finish growing the indium arsenide/indium gallium arsenide quantum well material on the indium phosphide substrate. In the method, an InAs quantum well with a proper thickness is grown at relatively lower temperature to realize the functions of reducing shortcomings and increasing a transition wavelength to 2.3 mu m under high strain condition.

The invention relates to a method for epitaxially growing a strontium titanate (STO) thin film on a gallium arsenide (GaAs) substrate. The method comprises the following steps: 1. treating the surface of the GaAs substrate to form a flat atomically clean surface with Ga atoms as the final surface; 2. sending the GaAs substrate treated in the step 1 and an STO target to the vacuum chamber of laser molecular beam epitaxy (MBE) equipment and immobilizing the GaAs substrate and the STO target in the vacuum chamber; 3. heating the GaAs substrate immobilized in the step 2 to the temperature between 550-600; and 4. evaporating the STO target immobilized in the step 2 with laser beams to ensure the STO to be deposited on the GaAs substrate, using reflection high energy electron diffraction to monitor the growth process of the thin film in the deposition process and obtaining the STO epitaxial thin film when typical STO diffraction fringes appear on the diffraction patterns. The method has the following beneficial effect: the surface of the GaAs substrate is treated to form the flat atomically clean surface with Ga atoms as the final surface, thus overcoming the difficulty in growing the dielectric oxide thin film on the GaAs substrate binary compound.

The invention provides an indium arsenide antimony and indium gallium arsenide antimony two-waveband infrared detector and a manufacturing method thereof. The indium arsenide antimony and indium gallium arsenide antimony two-waveband infrared detector structurally comprises a GaSb substrate, a first GaSb buffer layer grown on the GaSb substrate, an InGaAsSb PIN type short-wave device grown on the first GaSb buffer layer, a second GaSb buffer layer grown on the InGaAsSb PIN type short-wave device and an InAsSb NIP type middle-wave device grown on the second GaSb buffer layer. The indium arsenide antimony and indium gallium arsenide antimony two-waveband infrared detector can realize signal detection on an infrared middle-wave waveband and a short-wave waveband.

The invention discloses a gallium arsenide-based Schottky frequency-doubling diode with multi-beam leads and relates to the technical field of semiconductor devices. The gallium arsenide-based Schottky frequency-doubling diode comprises a gallium arsenide-based Schottky frequency-doubling diode body. The multi-beam type leads are disposed at two ends of the gallium arsenide-based Schottky frequency-doubling diode body. Each multi-beam type lead comprises at least two beam type sub-leads with one ends connected, and the thickness of each beam type sub-lead is 2-4 micrometers. The gallium arsenide-based Schottky frequency-doubling diode has the advantages that the fact that the gallium arsenide-based Schottky frequency-doubling diode is normally mounted on a circuit is guaranteed, the safety and reliability of the Schottky frequency-doubling diode are increased, high mounting yield is achieved, mounting quality is guaranteed, production and scientific research costs are lowered greatly, the diode is simple in structure and convenient to use, and the service life of the diode is prolonged.

The invention discloses a detection performance testing method and device for a photoelectric detection system of a laser radar. According to the invention, with a tungsten halogen lamp and a gratingmonochromator, a testing light signal with the precisely adjustable wavelength and strength is outputted; and an echo signal received actually by a laser radar is simulated from the aspects of wavelength and strength. On the basis of combination of silicon and indium-gallium-arsenide standard detectors, performance indexes like an optical transmittance, an input light intensity-output voltage response curve, and a linear response range of the photoelectric detection system of the laser radar are measured simultaneously. Relevant test results can be used for assisting in the parameter design ofthe photoelectric detection system of the laser radar, so that the installation and calibration quality of the photoelectric detection system of the laser radar is improved and the good quality of the measurement data during the application process of the laser radar is ensured.

The invention discloses a preparation method for a gallium arsenide-silicon multi-junction efficient solar battery. The preparation method is characterized by at least comprising the following steps of 101, preparing a Si solar battery through a diffusion or ion injection way; 102, preparing a GaAs solar battery; 103, preparing metal grid line electrodes with the same dimensions and used as contact electrodes on the Si solar battery and the GaAs solar battery respectively; 104, performing aligning and bonding on the Si solar battery and the GaAs solar battery by using transparent epoxy resin according to contact electrode patterns; 105, etching off an AlAs sacrificial layer by using HF acid by adopting a substrate stripping multiplexing technique to obtain GaInP/InGaAs/Si 3-junction laminated solar battery and a multiplexing GaAs substrate; 106, manufacturing upper and lower electrodes of the battery; and 107, preparing a battery antireflection film.