Preparation method for gallium arsenide-silicon multi-junction efficient solar battery

A technology of solar cells and gallium arsenide, which is applied in the field of solar cells, can solve the problems of high cost and achieve the effects of saving costs, reducing costs, and improving photoelectric conversion efficiency

Active Publication Date: 2017-05-10
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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However, it has the disadvantage of high cost and is curren...

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  • Preparation method for gallium arsenide-silicon multi-junction efficient solar battery

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[0050] In order to further understand the invention content, characteristics and effects of the present invention, the following examples are given, and detailed descriptions are as follows in conjunction with the accompanying drawings:

[0051] see figure 1 , a method for preparing a gallium arsenide-silicon multi-junction high-efficiency solar cell, comprising:

[0052] 1. Preparation of single-junction Si (1.12eV) solar cells:

[0053] a. Use a P-type doped Si substrate with a thickness of 150-500 μm and a doping concentration of 1×10 15 ~1×10 18 cm -3 .

[0054] b. Use standard RCA solution silicon wafers for surface treatment to remove surface impurities;

[0055] c. Prepare the Si sub-cell 7 by means of diffusion or ion implantation, the PN junction depth of the Si sub-cell 7 is 0.3-0.8 μm; the forbidden band width of the Si sub-cell is 1.12 eV;

[0056] 2. Preparation of double-junction GaInP (1.88eV) / InGaAs (1.41eV) solar cell (the solar cell includes two parts o...

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Abstract

The invention discloses a preparation method for a gallium arsenide-silicon multi-junction efficient solar battery. The preparation method is characterized by at least comprising the following steps of 101, preparing a Si solar battery through a diffusion or ion injection way; 102, preparing a GaAs solar battery; 103, preparing metal grid line electrodes with the same dimensions and used as contact electrodes on the Si solar battery and the GaAs solar battery respectively; 104, performing aligning and bonding on the Si solar battery and the GaAs solar battery by using transparent epoxy resin according to contact electrode patterns; 105, etching off an AlAs sacrificial layer by using HF acid by adopting a substrate stripping multiplexing technique to obtain GaInP/InGaAs/Si 3-junction laminated solar battery and a multiplexing GaAs substrate; 106, manufacturing upper and lower electrodes of the battery; and 107, preparing a battery antireflection film.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of gallium arsenide-silicon multi-junction high-efficiency solar cells. Background technique [0002] The global energy crisis and environmental degradation are threatening the long-term stable development of human beings. Energy and environmental problems have become two major problems facing human beings in the 21st century. Solar photovoltaic power generation is an effective way to solve energy and environmental problems and realize the sustainable development of human society. According to the forecast of the European Photovoltaic Industry Association (EPIA), by 2030, renewable energy will account for more than 30% of the total energy structure, and solar photovoltaic power generation will account for more than 10% of the world's total power supply. However, compared with traditional power generation methods, the cost of solar photovoltaic power gene...

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Application Information

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IPC IPC(8): H01L31/18H01L31/0687
CPCH01L31/0687H01L31/1804H01L31/1844H01L31/188H01L31/1896Y02E10/544Y02E10/547Y02P70/50
Inventor 张无迪高鹏薛超刘丽蕊张清旭姜明序石璘
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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