52results about How to "Increase peak current" patented technology

The invention discloses a dual-power supply management system and a dual-power supply management method for an electric vehicle. The dual-power supply management system comprises a storage battery, a power electronic switch, a supercapacitor bank, a bidirectional DC-DC (Direct Current-Direct Current) converter and a digital signal processor, wherein the storage battery is connected to an inverter through the power electronic switch; the power electronic switch controls the charge, discharge and switching on or off of the storage battery under the control of an acquired PWM (Pulse Width Modulation) signal, the supercapacitor bank is connected to the inverter through the bidirectional DC-DC converter; the bidirectional DC-DC inverter is used for increasing or reducing the voltage in a positive direction and a negative position under the control of the acquired PWM signal; and the digital signal processor is connected with the storage battery, the supercapacitor bank, a motor, an accelerator, a brake and direct current buses among the inverter, the power electronic switch and the bidirectional DC-DC inverter to generate a PWM signal for controlling the power electronic switch and the bidirectional DC-DC inverter. According to the dual-power supply management system, the supercapacitor bank and the storage battery are used in parallel, and thus the defects that the storage battery is low in specific power, does not support a large current, and the like are effectively made up.

The invention relates to an oxygen reduction reaction catalyst with graphene as a carrier, and a preparation method thereof. The invention provides a graphene-based composite oxygen reduction reaction catalyst and a preparation method thereof. The catalyst comprises graphene and cobalt hydroxide, and the loading amount of cobalt hydroxide is 3.2-15 microgram / cm2. The preparation method of the graphene-based composite oxygen reduction reaction catalyst comprises: depositing a cobalt hydroxide precipitate on a surface of a graphene membrane by a potentiostatic deposition method so as to obtain the graphene-based composite oxygen reduction reaction catalyst.

The invention discloses an RTD diode of an indium gallium nitride emitting electrode ohmic contact layer and a manufacturing method thereof. The diode comprises a GaN epitaxial layer, an n+GaN collector electrode ohmic contact layer, a first GaN separating layer, a first InA1N barrier layer, a GaN main quantum well layer, a second InA1N barrier layer, an InGaN separating layer, an n+InGaN emitting electrode ohmic contact layer, a circular electrode, an annular electrode which is arranged above the n+GaN collector electrode ohmic contact layer and is not contacted with the first GaN separating layer and an A1N passivation layer located above the n+GaN collector electrode ohmic contact layer. The emitting electrode ohmic contact layer of the diode adopts an InGaN material so that a peak value current is increased and output power is increased too. In a diode manufacturing method, the InGaN is grown and then a high temperature technology is not needed, In precipitation does not exist and electric leakage of a device is reduced.

The invention discloses a resonance tunneling diode with double InGaN sub quantum wells. The resonance tunneling diode mainly solves the problems that an existing device is small in tunneling current and poor in I-V character repeatability. The resonance tunneling diode comprises a main body and an auxiliary body, the main body is divided into a SiC substrate layer, a GaN epitaxial layer, an n+GaN collector ohmic contact layer, a first GaN isolating layer, a first InAlN barrier layer, a first GaN main quantum well layer, a second GaN main quantum layer, a second InAlN barrier layer, a second GaN isolating layer and an n+GaN emitter diode ohmic contact layer from bottom to top, and the auxiliary part is provided with an annular electrode, a round electrode and a passivation layer. The annular electrode is arranged above the n-GaN collector ohmic contact layer, the round electrode is arranged above the n+GaN emitter ohmic contact layer, and the passivation layer is arranged above the annular electrode and the round electrode. The resonance tunneling diode can effectively improve the power of the device, reduce power consumption and improve the repeatability and is suitable for the terahertz radiation frequency band work.

The invention discloses a wide-band gap multi-heterojunction tunnel junction structure, which comprises four functional layers from the first to the fourth, wherein the first functional layer is provided with a first band gap and a first type doping; the second functional layer is provided with a second band gap smaller than the first band gap and the first type doping; the third functional layer is provided with a third band gap and a second type doping; and the fourth functional layer is provided with a fourth band gap larger than the third band gap and the second type doping. Due to the adoption of the structure provided by the invention, the problem that the peak current density of the wide-band tunnel junction in the prior art is low is solved, four functional layers are adopted to form the tunnel junction structure, and hetero junctions are formed among the functional layers, so that the peak tunneling current can be improved either by the band offset of a pN type or nP type heterojunction structure, or by the carrier compensation, which is realized through the injection effect of a carrier of a Pp type or Nn type heterojunction structure, and accordingly, the series resistance value is smaller. Therefore, the wide-band gap multi-heterojunction tunnel junction structure can be applied to a high-power concentrator solar cell.

The invention discloses an RTD with an InGaN sub quantum well with a gradually changing In content. The RTD comprises a GaN epitaxial layer, an n+GaN collector electrode ohmic contact layer, a first GaN isolation layer, a first InAlN barrier layer, a GaN main quantum layer, a second InAlN barrier layer, an InGaN sub quantum well with a gradually changing In component, a second GaN isolation layer, an n+GaN emitter electrode ohmic contact layer and a circular electrode which are successively distributed on a substrate from bottom to top, an annular electrode which is disposed on the n+GaN collector electrode ohmic contact layer and is not in contact with the first GaN isolation layer, and an AlN passivation layer which is disposed on the n+GaN collector electrode ohmic contact layer. According to the invention, an InGaN sub quantum well with a gradually changing In component and an AlN material passivation layer are introduced to the RTD, such that peak currents are increased, output power is improved, and device power consumption is reduced.

The invention relates to an XRAM pulse generation circuit. A reverse switching dynistor (RSD) is selected as a master switch, is a novel high-power semiconductor closing switch and is high in through-current capability and small in current change rate and delay jitter. A fast recovery thyristor is selected as a primary switch to reduce energy loss in the process of current conversion, so that output efficiency is improved. The XRAM pulse generation circuit has the advantages that peak current, current change rate and output efficiency of output pulses can be improved. By current conversion technology, current conversion capability of a unit inductance energy-storage system can reach tens of kA, the unit inductance energy-storage system is matched with a high energy-storage density battery or a small flywheel generator, a lot of inductance energy-storage units are in parallel-connection running, and a high-power pulse power source system with energy storage from hundreds of kJ to several MJ can be realized.

The invention discloses a junction barrier schottky diode. An N-conductive type first drift layer is arranged on the upper surface of a substrate; back surface ohmic contact metal is arranged on the lower surface of the substrate; a p+ ion injection region is formed on the upper surface of the first drift layer through ion injection; front surface schottky contact metal is on the first drift layerand the upper surface of the p+ ion injection region; an N-conductive type second drift layer is between the first drift layer and the front surface schottky contact metal; and a P++ injection regionis between the p+ ion injection region and the front surface schottky contact metal. According to the diode disclosed by the invention, after JTE and FLR are finished, an N-Sic epitaxial layer is manufactured on the upper surface, and the small-area P++ region is prepared through the N-epitaxial layer, so that the contact area of the schottky metal is enlarged, the forward current density is increased, and meanwhile, no influence is caused on the aspect of reverse voltage withstand; and in addition, the P type region in the N-SiC epitaxial layer is heavily doped, so that peak current can be increased, and the surge resistance of a device can be improved.

The invention provides a voltage-reduction structure LED driving circuit, and a constant current driver and a design method of the voltage-reduction structure LED driving circuit. The driver comprises a power switch, a zero cross detection circuit, an on-signal generation circuit and a driving circuit, wherein the power switch is directly or indirectly connected with an inductor in the voltage-reduction structure LED driving circuit, the zero cross detection circuit responds to inductor current and outputs a zero cross detection signal in a zero cross mode, the on-signal generation circuit obtains inductor current duration time according to a driving signal and the zero cross detection signal, determines the inductor current interruption time according to the inductor current duration time and generates a setting signal used for switching on of the power switch so that the ratio from the inductor current duration time to the inductor current interruption time can be kept as a preset value, and the driving circuit is used for generating the driving signal according to a resetting signal for switching off the power switch and the setting signal. Under the condition of the same output current, the peak current of the inductor is increased, the inductance amount of the inductor is reduced, and the driver is particularly suitable for occasions with low output current and low requirement for the inductance amount.

A multi dynode device (MDD) for electron multiplication and detection and a hybrid detector using the MDD have high peak signal output currents and large dynamic range while preserving the time-dependent information of the input event and avoiding the generation of significant distortions or artifacts on the output signal. The MDD and hybrid detector overcome saturation problems observed in conventional hybrid detectors by providing a unique electron multiplier portion that avoids the path-length differences. The MDD and hybrid detector can be used in mass spectrometry, in particular, time-of-flight mass spectrometry. The MDD comprises a plurality of dynode plates arranged in a stacked configuration. Each dynode plate in the stack has a plurality of apertures for cascading secondary electrons through the stack. Each aperture comprises a mechanical bias or offset with respect to the apertures in adjacent plates. The offset is such that the electrons will impact with one or more of the dynode plates. The MDD further comprises a power source to provide a voltage bias to the dynode plates. The power source comprises a voltage supply and a voltage divider. Each dynode plate is connected to a tap on the voltage divider such that a voltage gradient is produced along the stack. The MDD can supply high peak currents. The hybrid detector comprises an input portion having a microchannel plate MCP and an output portion having the multi dynode device (MDD). The MCP and MDD are adjacent to one another. The MDD is planar, flat, and compact like that of the MCP, such that important temporal integrity of an input signal event is preserved.

A thin battery with improved properties containing a cathode paste is presented. The cathode paste comprises a cathode active material, an electrolyte solution, one or more binding agent and boric acid. A method for preparing a cathode paste and a cathode are also provided.

The invention provides a GaAs tunnel junction and a preparation method thereof. Excellent tunneling performance and a high peak current are achieved, the requirement for a high-power optically-focused multi-junction battery can be well met, and photoelectric conversion efficiency of the battery is promoted. The GaAs tunnel junction comprises a barrier layer, a first doped layer and a second doped layer, wherein the barrier layer, the first doped layer and the second doped layer are arranged on the surface of a GaAs substrate in sequence, and the GaAs substrate, the barrier layer and the first doped layer have the same conduction type. The GaAs tunnel junction is characterized in that if the first doped layer is in an n type and the first adulterant is Te, the second doped layer is in a p type, and the second adulterant is Mg; if the first doped layer is in a p type and the first adulterant is Mg, the second doped layer is in an n type, and the second adulterant is Te.

The invention discloses an isolation drive method of MOSFET switch tubes applied to a traveling wave tube program control high-voltage power supply. A pulse width modulating signal is sent to an extra-high voltage isolation pulse transformer to produce two groups of trigger pulse signals with the same amplitude, the same frequency and opposite phases after processed; and each group of the trigger signals drive an MOSFET power switch tube on a respective bridge arm to work after passing through a push-pull amplifier circuit and a transient suppression circuit respectively.

The application refers to a wire electrode (3) for electrical discharge machines. The inventive wire electrode includes a core (1) - preferably made of copper, brass, molybdenum, tungsten or steel - and a coating (2), which contains according to the invention graphene.

The invention discloses a sandwich type electrochemical sensor constructed based on boric acid affinity, a preparation method and application thereof. The preparation method comprises the steps of: dropping GO solution on a GCE electrode, and then, performing electric deposition in PBS solution, so that an RGO / GCE electrode is obtained; mixing APBA solution, HCl solution with NaF solution, so thatmixed solution A is obtained, and performing cyclic voltammetry scanning of the RGO / GCE electrode in the mixed solution A, so that a PAPBA / RGO / GCE electrode is obtained; dropping BSA solution on thePAPBA / RGO / GCE electrode, so that a BSA / PAPBA / RGO / GCE electrode is obtained; and, mixing the PBS solution, NADH with FcBA solution, so that mixed solution B is obtained, and reacting by putting the BSA / PAPBA / RGO / GCE in the mixed solution B, so that the sandwich type electrochemical sensor is obtained. The problem that the traditional NADH detection is low in sensitivity, few in detection method, poor in selectivity and the like can be solved.

The invention discloses a plasma all-dimensional vacuum coated power supply. The power supply comprises a circuit connecting to an input power supply. The circuit comprises a filter, a rectifying circuit, a filter circuit, a direct current inverter circuit, a high-frequency step-up transformer, a secondary rectifying circuit, a secondary filter circuit, an IGBT (Insulated Gate Bipolar Transistor) chopper, a plasma load and a resistor. The invention further provides a coating method of the plasma all-dimensional vacuum coated power supply. The plasma all-dimensional vacuum coated power supply has the high peak current up to 1000A and accordingly increases the ionization rate of plasma to obtain the dense coating having good binding force. Furthermore, the plasma all-dimensional vacuum coated power supply has the advantages of reducing the costs, improving the efficiency and reducing the defect rate.

The invention discloses an ScAlN / GaN double-barrier resonant tunneling diode and a manufacturing method thereof. The ScAlN / GaN double-barrier resonant tunneling diode mainly solves the problems that an existing gallium nitride resonant tunneling diode is low in peak current, small in peak-valley current ratio and asymmetric in differential negative resistance effect. The ScAlN / GaN double-barrier resonant tunneling diode comprises a substrate, a GaN epitaxial layer, an n+GaN emitter ohmic contact layer, a GaN isolation layer, a first barrier layer, a GaN quantum well layer, a second barrier layer, an isolation layer, a collector ohmic contact layer and a collector electrode from bottom to top, wherein the two barrier layers both adopt ScAlN which has an Sc component range of 15% to 20% and a thickness of 1-3 nm and is identical in the Sc component and thickness; the isolation layer is made of InN with a thickness of 2-4 nm; and the collector ohmic contact layer adopts n+InN. The ScAlN / GaN double-barrier resonant tunneling diode is high in peak current, large in peak-valley current ratio, capable of achieving forward and reverse symmetrical differential negative resistance effect, high in working frequency and output power and applicable to a high-frequency terahertz radiation source and a high-speed digital circuit.

The invention relates to the field of food safety, in particular to a Sudan red detection method. By use of the properties that nanoparticles have magnetism, good biocompatibility, low toxicity, simplicity in preparation and high adsorption capability, the sensitivity of an electrode is further improved by coating the surface of the electrode with a functionalized carbon nanomaterial with the synergistic effect of carbon nanotubes and carbon black nanoparticles and adding magnetic nanoparticles, and good stability and low detection limit are obtained. The method has good reproducibility and issimple, a used detection material can be repeatedly utilized and is high in antijamming capability. A mixture of the carbon nanotubes and carbon black is taken as a substrate material, the magnetic nanoparticles are combined, the oxidation peak current of phenolic hydroxyl groups in a Sudan red reaction are notably increased through the synergistic effect, the nano effect and conductivity optimization, and existence of Sudan red in a sample can be more sensitively detected.

The invention provides a lithium ion super composite capacitor and a vehicle-mounted emergency call system. The lithium ion super composite capacitor comprises a capacitor cover group, a shell matchedwith the capacitor cover group and a capacitor winding core arranged in the shell, wherein the capacitor winding core has a positive electrode, a negative electrode, a positive lug connecting the positive electrode and a positive column, a negative plug connecting the negative electrode and the shell and an electrolyte poured in the shell; a positive electrode active material comprises a lithiumbattery ternary material; the negative electrode is coated with a negative electrode active material, a dispersant, an adhesive and a conductive agent, and the negative electrode active material comprises one or two of fluorine-doped carbon-coated manganese oxide or fluorine-doped carbon-coated zinc oxide and activated carbon. The beneficial effects are that the lithium ion super composite capacitor is low in self-discharge rate, long in service life, capable of ensuring a stable working state and high in pulse current. The vehicle-mounted E-call (Emergency Call) system loaded with the lithiumion super composite capacitor exists independently for more than 10 years, and modules of the vehicle-mounted E-call system are ensured to be powered at any time.

The invention relates to an AgPd nano-alloy formate oxidation catalyst and treatment method of non-surfactant for improving catalytic activity. An in-situ electrochemical potential cycle method is applied to improving the AgPd nano-alloy formate oxidation catalytic activity on the basis of the alloyed Pd-based nano-structure FOR catalytic performance; the electrochemical potential cycle can causethe reconstruction of the metal electrode surface, thereby playing the effect of modifying the surface chemistry and catalysis of the catalyst; and meanwhile, the active agent cannot be introduced, and the nano-alloy FOR catalytic performance is secondarily improved. The AgPd nano-alloy formate oxidation catalyst disclosed by the invention has the advantage that the modification on the catalyst surface structure can be realized by only circulating voltammetry scanning at the 0.2-0.5V electrode potential interval, the FOR catalytic performance of the Ag-Pd catalyst is greatly improved without adding the organic surface active additive.

The invention discloses a natural gas engine ECU spraying device and a control method. The natural gas engine ECU spraying device comprises a natural gas engine ECU, spraying electromagnetic valves, avehicle-mounted power source and fuses; the first end of each spraying electromagnetic valve is connected with the vehicle-mounted power source through the corresponding fuse, and the second end of each spraying electromagnetic valve is connected with the natural gas engine ECU; the natural gas engine ECU judges whether a cold starting work condition is implemented or not according to the engineinput condition; if it is judged that the cold starting work condition is implemented, the spraying electromagnetic valve driving waveform is switched to a cold starting waveform mode from a normal waveform mode; if it is judged that the cold starting work condition is not implemented, the spraying electromagnetic valve driving waveform keeps the normal waveform mode; and under the cold starting waveform mode, the peak current of the spraying electromagnetic valve driving waveform is increased to improve the opening performance of the spraying electromagnetic valves. After cold starting is finished, the spraying electromagnetic valve driving waveform is switched to the normal waveform mode from the cold starting waveform mode so as to ensure that the situation that an overlarge driving current flows through the spraying electromagnetic valves for a long time and thus the service lives of the spraying electromagnetic valves are shortened is avoided.

The invention discloses a unit pump electromagnet for an automobile engine, which comprises a shell (1), a coil, a coil bracket (6), an iron core (2) and binding posts (3), wherein the coil is wound on the iron core (2) to be arranged on the coil bracket (6) and arranged in the shell, and binding terminals of the coil is connected with the binding posts (3). The unit pump electromagnet is characterized in that the binding posts (3) are provided with devices for preventing fuel oil from flowing along the binding posts. In the invention, devices for preventing fuel oil from leaking are arranged on the binding posts, thereby greatly improving the sealing performance of electromagnet packaging, so that when the unit pump electromagnet is used under the condition of high pressure at the temperature of 155 DEG C or -40 DEG C, no leakage occurs, and the continuous working life can reach more than 1500 hours.

The invention belongs to the field of water quality monitoring, and particularly relates to a microbial fuel cell for monitoring the number of microorganisms and a monitoring system and method. The microbial fuel cell comprises a cell body, an anode, a cathode and an electrolyte, the anode and the cathode are pretreated graphite felt circles; and the electrolyte is formed by mixing neutral nitrate and activated sludge according to the volume ratio of (1-2): (1-2). According to the invention, through coupling of the electrodes, a signal processing unit and a wireless transmission module, the sensitivity of the electrodes and the monitoring efficiency of the quantity of residual microorganisms in the water body are improved; and the system generally realizes intelligence and automation of microbe quantity monitoring, and has the advantages of convenience in operation, high efficiency, low cost and the like.

The invention discloses an intelligent vehicle and a wheel edge driving device thereof, and relates to the technical field of intelligent vehicles, the intelligent vehicle comprises a mounting plate, the outer side of the mounting plate is fixedly connected with a damping mechanism, the lower end of the damping mechanism is provided with a driving mechanism, and the output end of the driving mechanism is provided with wheels. The invention provides the damping mechanism, the driving mechanism, the lifting mechanism and the damping mechanism, the driving system of the intelligent vehicle is designed into the four-wheel-drive four-rotation intelligent vehicle adopting the wheel-side motor device as the driving system, the wheel-side driving system is simple in structure and convenient to produce and manufacture, the wheel base of the whole wheel-side driving device is shortened through the design, and the service life of the whole wheel-side driving device is prolonged. The weight and the overall size of the wheel edge driving device are reduced on the premise that the dynamic property, the economical efficiency and the smoothness are guaranteed, meanwhile, the buffering mechanisms are additionally arranged at the front end and the rear end of the vehicle body, the buffering protection effect is achieved, equipment and devices of an intelligent vehicle can be placed on the carrying plate, and the height is controlled and adjusted through the lifting mechanism.

A charge pumping circuit consumes less current by reducing the number of charge pumps operating simultaneously. The charge pumping circuit includes a voltage sensor that detects a level of a high voltage and outputs a control signal based on the detection result. An oscillator provides an oscillating clock signal in response to the control signal of the voltage sensor, and the oscillator sequentially outputs the clock signal as a plurality of clock signals having shifted phases A plurality of high-voltage pumps are disposed in a plurality of regions to pump the high voltage in response to the clock signals and a different phase is designated for each region.

The invention discloses a switching power supply and a control circuit thereof. The control circuit comprises: a demagnetization detection module for obtaining a demagnetization time and a sampling time according to a voltage feedback signal; a frequency generation module for generating a ramp signal according to the demagnetization time, an oscillation signal, a first voltage sampling signal and a driving signal of a switching tube; a conduction control module for sampling and holding the voltage feedback signal to obtain a second voltage sampling signal, generating an error signal according to the second voltage sampling signal and a reference voltage, and generating a conduction signal according to the error signal and the ramp signal; a turn-off signal generation module for generating a turn-off signal according to the current sampling signal and the error signal; and a line loss compensation module for generating compensation current according to the demagnetization time, the sampling time and the error signal and superposing the compensation current to the conduction control module. According to the invention, output voltage deviation caused by various influences such as output cable voltage drop, loop direct-current gain error, sampling position movement and the like can be compensated, and an output voltage curve is improved.

The invention provides a voltage-reduction structure LED driving circuit, and a constant current driver and a design method of the voltage-reduction structure LED driving circuit. The driver comprises a power switch, a zero cross detection circuit, an on-signal generation circuit and a driving circuit, wherein the power switch is directly or indirectly connected with an inductor in the voltage-reduction structure LED driving circuit, the zero cross detection circuit responds to inductor current and outputs a zero cross detection signal in a zero cross mode, the on-signal generation circuit obtains inductor current duration time according to a driving signal and the zero cross detection signal, determines the inductor current interruption time according to the inductor current duration time and generates a setting signal used for switching on of the power switch so that the ratio from the inductor current duration time to the inductor current interruption time can be kept as a preset value, and the driving circuit is used for generating the driving signal according to a resetting signal for switching off the power switch and the setting signal. Under the condition of the same output current, the peak current of the inductor is increased, the inductance amount of the inductor is reduced, and the driver is particularly suitable for occasions with low output current and low requirement for the inductance amount.

The invention provides a composite pulse electrosparking spray explosion power source, system and method. The power source comprises a waveform generation circuit, a comparison circuit, an amplifyingcircuit and a power switch circuit which are sequentially connected. The waveform generation circuit generates second-level step wave origin pulses. The comparison circuit adopts a high circuit and alow circuit of comparison voltage of different threshold values to compare the comparison voltage with pulse signals, so that two ways of square wave pulse signals with the same phase positions, the same period and the duty ratio forming the proportional relation are formed. The two ways of square wave signals control on and of a high-voltage switch pipe and a low-voltage switch pipe correspondingly after being treated by the amplifying circuit, and thus second-level step waves are generated. Preceding levels in the second-level step waves are breakdown pulses and have break-down and corrosioneffects on discharging gaps. The rear levels provide explosive force pulses. According to the technical scheme, the problems that in the prior art, the energy efficiency is low and the spray explosion effect is poor are solved.