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52results about How to "Increase peak current" patented technology

Dual-power supply management system and dual-power supply management method for electric vehicle

The invention discloses a dual-power supply management system and a dual-power supply management method for an electric vehicle. The dual-power supply management system comprises a storage battery, a power electronic switch, a supercapacitor bank, a bidirectional DC-DC (Direct Current-Direct Current) converter and a digital signal processor, wherein the storage battery is connected to an inverter through the power electronic switch; the power electronic switch controls the charge, discharge and switching on or off of the storage battery under the control of an acquired PWM (Pulse Width Modulation) signal, the supercapacitor bank is connected to the inverter through the bidirectional DC-DC converter; the bidirectional DC-DC inverter is used for increasing or reducing the voltage in a positive direction and a negative position under the control of the acquired PWM signal; and the digital signal processor is connected with the storage battery, the supercapacitor bank, a motor, an accelerator, a brake and direct current buses among the inverter, the power electronic switch and the bidirectional DC-DC inverter to generate a PWM signal for controlling the power electronic switch and the bidirectional DC-DC inverter. According to the dual-power supply management system, the supercapacitor bank and the storage battery are used in parallel, and thus the defects that the storage battery is low in specific power, does not support a large current, and the like are effectively made up.
Owner:SHANGHAI DIANJI UNIV

Wide-band gap multi-heterojunction tunnel junction structure

The invention discloses a wide-band gap multi-heterojunction tunnel junction structure, which comprises four functional layers from the first to the fourth, wherein the first functional layer is provided with a first band gap and a first type doping; the second functional layer is provided with a second band gap smaller than the first band gap and the first type doping; the third functional layer is provided with a third band gap and a second type doping; and the fourth functional layer is provided with a fourth band gap larger than the third band gap and the second type doping. Due to the adoption of the structure provided by the invention, the problem that the peak current density of the wide-band tunnel junction in the prior art is low is solved, four functional layers are adopted to form the tunnel junction structure, and hetero junctions are formed among the functional layers, so that the peak tunneling current can be improved either by the band offset of a pN type or nP type heterojunction structure, or by the carrier compensation, which is realized through the injection effect of a carrier of a Pp type or Nn type heterojunction structure, and accordingly, the series resistance value is smaller. Therefore, the wide-band gap multi-heterojunction tunnel junction structure can be applied to a high-power concentrator solar cell.
Owner:XIAMEN CHANGELIGHT CO LTD

Schottky diode structure and manufacturing method thereof

The invention discloses a junction barrier schottky diode. An N-conductive type first drift layer is arranged on the upper surface of a substrate; back surface ohmic contact metal is arranged on the lower surface of the substrate; a p+ ion injection region is formed on the upper surface of the first drift layer through ion injection; front surface schottky contact metal is on the first drift layerand the upper surface of the p+ ion injection region; an N-conductive type second drift layer is between the first drift layer and the front surface schottky contact metal; and a P++ injection regionis between the p+ ion injection region and the front surface schottky contact metal. According to the diode disclosed by the invention, after JTE and FLR are finished, an N-Sic epitaxial layer is manufactured on the upper surface, and the small-area P++ region is prepared through the N-epitaxial layer, so that the contact area of the schottky metal is enlarged, the forward current density is increased, and meanwhile, no influence is caused on the aspect of reverse voltage withstand; and in addition, the P type region in the N-SiC epitaxial layer is heavily doped, so that peak current can be increased, and the surge resistance of a device can be improved.
Owner:安徽长飞先进半导体有限公司

Voltage-reduction structure LED driving circuit, and constant current driver and design method thereof

The invention provides a voltage-reduction structure LED driving circuit, and a constant current driver and a design method of the voltage-reduction structure LED driving circuit. The driver comprises a power switch, a zero cross detection circuit, an on-signal generation circuit and a driving circuit, wherein the power switch is directly or indirectly connected with an inductor in the voltage-reduction structure LED driving circuit, the zero cross detection circuit responds to inductor current and outputs a zero cross detection signal in a zero cross mode, the on-signal generation circuit obtains inductor current duration time according to a driving signal and the zero cross detection signal, determines the inductor current interruption time according to the inductor current duration time and generates a setting signal used for switching on of the power switch so that the ratio from the inductor current duration time to the inductor current interruption time can be kept as a preset value, and the driving circuit is used for generating the driving signal according to a resetting signal for switching off the power switch and the setting signal. Under the condition of the same output current, the peak current of the inductor is increased, the inductance amount of the inductor is reduced, and the driver is particularly suitable for occasions with low output current and low requirement for the inductance amount.
Owner:HANGZHOU SILAN MICROELECTRONICS

Multi dynode device and hybrid detector apparatus for mass spectrometry

A multi dynode device (MDD) for electron multiplication and detection and a hybrid detector using the MDD have high peak signal output currents and large dynamic range while preserving the time-dependent information of the input event and avoiding the generation of significant distortions or artifacts on the output signal. The MDD and hybrid detector overcome saturation problems observed in conventional hybrid detectors by providing a unique electron multiplier portion that avoids the path-length differences. The MDD and hybrid detector can be used in mass spectrometry, in particular, time-of-flight mass spectrometry. The MDD comprises a plurality of dynode plates arranged in a stacked configuration. Each dynode plate in the stack has a plurality of apertures for cascading secondary electrons through the stack. Each aperture comprises a mechanical bias or offset with respect to the apertures in adjacent plates. The offset is such that the electrons will impact with one or more of the dynode plates. The MDD further comprises a power source to provide a voltage bias to the dynode plates. The power source comprises a voltage supply and a voltage divider. Each dynode plate is connected to a tap on the voltage divider such that a voltage gradient is produced along the stack. The MDD can supply high peak currents. The hybrid detector comprises an input portion having a microchannel plate MCP and an output portion having the multi dynode device (MDD). The MCP and MDD are adjacent to one another. The MDD is planar, flat, and compact like that of the MCP, such that important temporal integrity of an input signal event is preserved.
Owner:AGILENT TECH INC

ScAlN/GaN double-barrier resonant tunneling diode and manufacturing method thereof

The invention discloses an ScAlN/GaN double-barrier resonant tunneling diode and a manufacturing method thereof. The ScAlN/GaN double-barrier resonant tunneling diode mainly solves the problems that an existing gallium nitride resonant tunneling diode is low in peak current, small in peak-valley current ratio and asymmetric in differential negative resistance effect. The ScAlN/GaN double-barrier resonant tunneling diode comprises a substrate, a GaN epitaxial layer, an n+GaN emitter ohmic contact layer, a GaN isolation layer, a first barrier layer, a GaN quantum well layer, a second barrier layer, an isolation layer, a collector ohmic contact layer and a collector electrode from bottom to top, wherein the two barrier layers both adopt ScAlN which has an Sc component range of 15% to 20% and a thickness of 1-3 nm and is identical in the Sc component and thickness; the isolation layer is made of InN with a thickness of 2-4 nm; and the collector ohmic contact layer adopts n+InN. The ScAlN/GaN double-barrier resonant tunneling diode is high in peak current, large in peak-valley current ratio, capable of achieving forward and reverse symmetrical differential negative resistance effect, high in working frequency and output power and applicable to a high-frequency terahertz radiation source and a high-speed digital circuit.
Owner:XIDIAN UNIV

Lithium ion super composite capacitor and vehicle-mounted emergency call system

The invention provides a lithium ion super composite capacitor and a vehicle-mounted emergency call system. The lithium ion super composite capacitor comprises a capacitor cover group, a shell matchedwith the capacitor cover group and a capacitor winding core arranged in the shell, wherein the capacitor winding core has a positive electrode, a negative electrode, a positive lug connecting the positive electrode and a positive column, a negative plug connecting the negative electrode and the shell and an electrolyte poured in the shell; a positive electrode active material comprises a lithiumbattery ternary material; the negative electrode is coated with a negative electrode active material, a dispersant, an adhesive and a conductive agent, and the negative electrode active material comprises one or two of fluorine-doped carbon-coated manganese oxide or fluorine-doped carbon-coated zinc oxide and activated carbon. The beneficial effects are that the lithium ion super composite capacitor is low in self-discharge rate, long in service life, capable of ensuring a stable working state and high in pulse current. The vehicle-mounted E-call (Emergency Call) system loaded with the lithiumion super composite capacitor exists independently for more than 10 years, and modules of the vehicle-mounted E-call system are ensured to be powered at any time.
Owner:武汉纽赛儿科技股份有限公司

Natural gas engine ECU spraying device and control method

The invention discloses a natural gas engine ECU spraying device and a control method. The natural gas engine ECU spraying device comprises a natural gas engine ECU, spraying electromagnetic valves, avehicle-mounted power source and fuses; the first end of each spraying electromagnetic valve is connected with the vehicle-mounted power source through the corresponding fuse, and the second end of each spraying electromagnetic valve is connected with the natural gas engine ECU; the natural gas engine ECU judges whether a cold starting work condition is implemented or not according to the engineinput condition; if it is judged that the cold starting work condition is implemented, the spraying electromagnetic valve driving waveform is switched to a cold starting waveform mode from a normal waveform mode; if it is judged that the cold starting work condition is not implemented, the spraying electromagnetic valve driving waveform keeps the normal waveform mode; and under the cold starting waveform mode, the peak current of the spraying electromagnetic valve driving waveform is increased to improve the opening performance of the spraying electromagnetic valves. After cold starting is finished, the spraying electromagnetic valve driving waveform is switched to the normal waveform mode from the cold starting waveform mode so as to ensure that the situation that an overlarge driving current flows through the spraying electromagnetic valves for a long time and thus the service lives of the spraying electromagnetic valves are shortened is avoided.
Owner:CHINA FIRST AUTOMOBILE

Intelligent vehicle and wheel edge driving device thereof

The invention discloses an intelligent vehicle and a wheel edge driving device thereof, and relates to the technical field of intelligent vehicles, the intelligent vehicle comprises a mounting plate, the outer side of the mounting plate is fixedly connected with a damping mechanism, the lower end of the damping mechanism is provided with a driving mechanism, and the output end of the driving mechanism is provided with wheels. The invention provides the damping mechanism, the driving mechanism, the lifting mechanism and the damping mechanism, the driving system of the intelligent vehicle is designed into the four-wheel-drive four-rotation intelligent vehicle adopting the wheel-side motor device as the driving system, the wheel-side driving system is simple in structure and convenient to produce and manufacture, the wheel base of the whole wheel-side driving device is shortened through the design, and the service life of the whole wheel-side driving device is prolonged. The weight and the overall size of the wheel edge driving device are reduced on the premise that the dynamic property, the economical efficiency and the smoothness are guaranteed, meanwhile, the buffering mechanisms are additionally arranged at the front end and the rear end of the vehicle body, the buffering protection effect is achieved, equipment and devices of an intelligent vehicle can be placed on the carrying plate, and the height is controlled and adjusted through the lifting mechanism.
Owner:YANCHENG INST OF TECH +1

Switching power supply and control circuit thereof

The invention discloses a switching power supply and a control circuit thereof. The control circuit comprises: a demagnetization detection module for obtaining a demagnetization time and a sampling time according to a voltage feedback signal; a frequency generation module for generating a ramp signal according to the demagnetization time, an oscillation signal, a first voltage sampling signal and a driving signal of a switching tube; a conduction control module for sampling and holding the voltage feedback signal to obtain a second voltage sampling signal, generating an error signal according to the second voltage sampling signal and a reference voltage, and generating a conduction signal according to the error signal and the ramp signal; a turn-off signal generation module for generating a turn-off signal according to the current sampling signal and the error signal; and a line loss compensation module for generating compensation current according to the demagnetization time, the sampling time and the error signal and superposing the compensation current to the conduction control module. According to the invention, output voltage deviation caused by various influences such as output cable voltage drop, loop direct-current gain error, sampling position movement and the like can be compensated, and an output voltage curve is improved.
Owner:HANGZHOU SILAN MICROELECTRONICS

Step-down structure led drive circuit and its constant current driver and design method

The invention provides a voltage-reduction structure LED driving circuit, and a constant current driver and a design method of the voltage-reduction structure LED driving circuit. The driver comprises a power switch, a zero cross detection circuit, an on-signal generation circuit and a driving circuit, wherein the power switch is directly or indirectly connected with an inductor in the voltage-reduction structure LED driving circuit, the zero cross detection circuit responds to inductor current and outputs a zero cross detection signal in a zero cross mode, the on-signal generation circuit obtains inductor current duration time according to a driving signal and the zero cross detection signal, determines the inductor current interruption time according to the inductor current duration time and generates a setting signal used for switching on of the power switch so that the ratio from the inductor current duration time to the inductor current interruption time can be kept as a preset value, and the driving circuit is used for generating the driving signal according to a resetting signal for switching off the power switch and the setting signal. Under the condition of the same output current, the peak current of the inductor is increased, the inductance amount of the inductor is reduced, and the driver is particularly suitable for occasions with low output current and low requirement for the inductance amount.
Owner:HANGZHOU SILAN MICROELECTRONICS
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