The invention discloses a junction barrier
schottky diode. An N-conductive type first drift layer is arranged on the upper surface of a substrate; back surface
ohmic contact metal is arranged on the lower surface of the substrate; a p+
ion injection region is formed on the upper surface of the first drift layer through
ion injection; front surface schottky contact
metal is on the first drift layerand the upper surface of the p+
ion injection region; an N-conductive type second drift layer is between the first drift layer and the front surface schottky contact
metal; and a P++ injection regionis between the p+ ion injection region and the front surface schottky contact metal. According to the
diode disclosed by the invention, after JTE and FLR are finished, an N-Sic epitaxial layer is manufactured on the upper surface, and the small-area P++ region is prepared through the N-epitaxial layer, so that the contact area of the schottky metal is enlarged, the
forward current density is increased, and meanwhile, no influence is caused on the aspect of reverse
voltage withstand; and in addition, the P type region in the N-SiC epitaxial layer is heavily doped, so that
peak current can be increased, and the surge resistance of a device can be improved.