5 results about "Resonance tunneling" patented technology

The invention discloses a resonant tunneling diode rapid simulation method based on a multi-step method, and the method comprises the following steps: uniformly dividing a phase space according to the structure and size of a resonant tunneling diode, and selecting a time-dependent Wigner equation model which considers or does not consider phonon scattering to simulate a quantum tunneling process in a device; solving a time-dependent Wigner equation model for applying an external bias voltage through a numerical value by utilizing a numerical value format of a Galerkin spectrum method combining a multi-step method, a windward format and a sinchinger function as a primary function, and calculating corresponding current density by utilizing a numerical value solution of the Wigner function at each moment until the current density tends to be stable along with time; enabling the mean value of the steady-state current density of each point in each bias voltage point direction to be equivalent to the steady-state current of the bias voltage point, drawing a change curve of the steady-state current density mean value of the resonant tunneling diode along with the external bias voltage, simulating the negative differential resistance effect of the device, and carrying out the simulation of the current-voltage characteristic of the device.

The application discloses a micro communication and sensing integrated terahertz noninvasive blood glucose monitoring system and belongs to the technical field of terahertz human feature monitoring. The system comprises a transmitting chip, a detecting communication chip and a remote processing system. The transmitting chip comprises a resonance tunneling oscillation source and an on-chip antenna, and serves as a terahertz transmitting front end. The detecting communication chip is used for receiving signals reflected from human skin to a receiving end, measuring electromagnetic field intensity changes and obtaining spectrum information related to the water content of the skin surface. The spectrum information is wirelessly transmitted to the remote processing system. On the basis of a terahertz measurement experiment, the remote processing system obtains a large amount of data set information, processes the data set through data preprocessing and clustering methods, and adopts a deep residual network to train a blood glucose value prediction model. The application adopts a national production process to realize the development of a micro-sized prototype, completes the comparison of large sample medical data, and realizes high-accuracy micro-sized multi-data terahertz noninvasive sign detection.

The application discloses an adaptive encryption method based on resonance tunneling diode current-voltage simulation, which comprises the following steps: solving a Schrodinger-Poisson model by utilizing a fourth-order compact difference format coupling on an initial grid; calculating an encryption indicator of each subinterval on an existing grid, and encrypting the grid according to an encryption strategy until a predetermined grid encryption requirement is met, so that a final calculation grid is obtained; solving the Schrodinger-Poisson model by utilizing the compact difference format coupling on the obtained local encryption grid, and then obtaining convergent electron density and potential energy function; and calculating a current density according to a Tsu-Esaki formula within a specified bias range, constructing a current-voltage characteristic curve through a numerical analysis tool, and realizing simulation of a negative differential resistance effect. While ensuring the solution accuracy of physical quantities such as electron density and current density, the application effectively controls the size of the grid, significantly reduces the calculation amount, and greatly improves the calculation efficiency.

The invention discloses a terahertz hybrid integrated resonant tunneling diode detector packaged by a metal waveguide, and belongs to the technical field of terahertz wireless transceiving, the terahertz hybrid integrated resonant tunneling diode detector comprises an RTD tube core, a substrate circuit and a metal waveguide packaging structure, the substrate circuit comprises a substrate, an A-surface circuit and a B-surface metal ground, and the A-surface circuit and the B-surface metal ground are located above and below the substrate; the A-surface circuit comprises a resonance circuit, a microstrip E-surface probe of a microstrip-waveguide conversion structure, a bias filtering structure and a bias pad which are connected in sequence; the resonance circuit comprises a double-opening resonance ring, an MIM capacitor and a shunt resistor, the MIM capacitor and the shunt resistor are located at the opening position of the double-opening resonance ring, parallel split branches are arranged in the double-opening resonance ring in the signal transmission direction, and the RTD tube core is located at the split position of the parallel split branches. According to the invention, detection and oscillation can be realized at the same time, the device can be cascaded with a mixer packaged by a metal waveguide, the device has the advantage of expandability, and compared with monolithic integration, the device has the advantages of low cost, high design flexibility, fast iteration and the like on the premise of ensuring the detection effect.

The invention provides a resonant tunneling photodiode, and relates to the technical field of infrared photoelectric devices. The resonant tunneling photodiode includes: a substrate; the material layer is located above the substrate, the material layer comprises an absorption region and a gain region and is used for regulating and controlling the signal gain of the infrared signal, and the gain region comprises a lower potential barrier layer; the potential well layer is positioned above the lower potential barrier layer; the upper potential barrier layer is located above the potential well layer, and the upper potential barrier layer and the lower potential barrier layer are of an asymmetric structure or are different in material design. According to the invention, the asymmetric double-barrier resonant tunneling structure is introduced, and the lower barrier layer close to the absorption region side is made of a material with a higher barrier height or a larger barrier thickness, so that compared with an existing symmetric barrier structure, the differential conductance of the device and the lifetime of accumulated minority carriers are optimized at the same time, and the responsivity is enhanced.