17 results about "Resonance tunneling" patented technology

The present disclosure relates to a high performance molecular thermoelectric device using an organometallic molecular chain capable of coherent near-resonant tunneling, and relates to a method of forming an organometallic molecular chain capable of coherent near-resonant tunneling on an electrode surface using an electrochemical reduction grafting method, a thermoelectric assembly (molecular junction) using the same, a high performance molecular thermoelectric device and investigating thermoelectric properties.

The invention discloses a resonant tunneling diode rapid simulation method based on a multi-step method, and the method comprises the following steps: uniformly dividing a phase space according to the structure and size of a resonant tunneling diode, and selecting a time-dependent Wigner equation model which considers or does not consider phonon scattering to simulate a quantum tunneling process in a device; solving a time-dependent Wigner equation model for applying an external bias voltage through a numerical value by utilizing a numerical value format of a Galerkin spectrum method combining a multi-step method, a windward format and a sinchinger function as a primary function, and calculating corresponding current density by utilizing a numerical value solution of the Wigner function at each moment until the current density tends to be stable along with time; enabling the mean value of the steady-state current density of each point in each bias voltage point direction to be equivalent to the steady-state current of the bias voltage point, drawing a change curve of the steady-state current density mean value of the resonant tunneling diode along with the external bias voltage, simulating the negative differential resistance effect of the device, and carrying out the simulation of the current-voltage characteristic of the device.

The invention discloses a resonant tunneling radiation source with an adjustable polarization state direction. The resonant tunneling radiation source comprises a bottom slot antenna radiation source based on a resonant tunneling diode, a middle insulation transmission layer and a top metal polarization structure layer. Each unit of the slot antenna radiation source comprises a resonant tunneling diode, a slot antenna, two plate electrodes and two resistors, a first plate electrode, an air bridge, the resonant tunneling diode and a second plate electrode are sequentially connected to form a closed loop, and the slot antenna is located below the air bridge; two symmetrical resistors are formed on the two sides of the air bridge and are connected to the two ends of the resonant tunneling diode in parallel. An insulating transmission layer is deposited on a radiation source of the slot antenna to isolate electromagnetic coupling, and a metal polarization structure layer is formed on the insulating transmission layer through magnetron sputtering of metal. According to the invention, the radiation direction of the resonant tunneling radiation source is regulated and controlled through the polarization characteristic of the polaroid on the top layer.

The present invention discloses a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, belonging to the field of radio transceiver technology. The source comprises a substrate and an RTO, an RTA, and an on-chip antenna located above the substrate. The RTA comprises an RTD die pair and an orthogonal hybrid coupler, wherein the RTD die pair comprises a first RTD and a second RTD. The RTO is used to generate an oscillation signal, which is input into the RTA for reflection amplification and then output and radiated through the on-chip antenna. The present invention utilizes the negative differential conductance formed by the resonant tunneling effect of the RTD to compensate for the losses of the RTO's transmission line and radiating antenna to form an oscillation signal. The oscillation signal is then reflected and enhanced by the orthogonal hybrid coupler to achieve voltage gain output, thereby increasing the output power of the single integrated radiation source. The monolithic radiation source can also be expanded as an array unit into an RTD radiation source array structure to further amplify the output power of the RTD radiation source.

The invention provides a resonant tunneling diode which can be applied to the technical field of semiconductors. The resonant tunneling diode comprises a substrate; a buffer layer on the substrate; the first mesa structure is positioned on one side, far away from the substrate, of the buffer layer; the second mesa structure is located on the side, away from the substrate, of the buffer layer, and the material of the substrate comprises gallium arsenide; the second mesa structure is made of indium arsenide and aluminum antimonide; and the first table-board structure and the second table-board structure are arranged at an interval. Through the structure, the peak-valley current ratio of the device is improved, and the depletion region time delay of the device is effectively shortened. The embodiment of the invention also provides a preparation method of the resonant tunneling diode.

The present invention discloses a terahertz mixer integrated with a local oscillator, belonging to the field of terahertz radio frequency technology. It includes: an indium phosphide (InP) substrate circuit, a metal cavity, a radio frequency waveguide, and a height-reducing waveguide. The InP substrate circuit is successively provided with a radio frequency grounding structure, a radio frequency probe transition structure, a radio frequency matching structure, a reverse parallel resonant tunneling diode pair, a local oscillator matching structure, a local oscillator low-pass filtering structure, a local oscillator duplexing structure, a local oscillator source structure based on resonant tunneling diodes, and an intermediate frequency low-pass filter structure; the non-linear device is realized by a monolithic integrated reverse parallel resonant tunneling diode and is located between the radio frequency matching structure and the local oscillator matching structure; the local oscillator source is realized based on resonant tunneling diodes and is fed into the reverse parallel diodes through the local oscillator duplexing structure. The present invention is realized in a fully monolithic integrated manner. The resonant tunneling diode provides the local oscillator signal for the mixer, reducing the volume, lowering the complexity, improving the conversion loss, and enhancing the stability of the device.

The application discloses a micro communication and sensing integrated terahertz noninvasive blood glucose monitoring system and belongs to the technical field of terahertz human feature monitoring. The system comprises a transmitting chip, a detecting communication chip and a remote processing system. The transmitting chip comprises a resonance tunneling oscillation source and an on-chip antenna, and serves as a terahertz transmitting front end. The detecting communication chip is used for receiving signals reflected from human skin to a receiving end, measuring electromagnetic field intensity changes and obtaining spectrum information related to the water content of the skin surface. The spectrum information is wirelessly transmitted to the remote processing system. On the basis of a terahertz measurement experiment, the remote processing system obtains a large amount of data set information, processes the data set through data preprocessing and clustering methods, and adopts a deep residual network to train a blood glucose value prediction model. The application adopts a national production process to realize the development of a micro-sized prototype, completes the comparison of large sample medical data, and realizes high-accuracy micro-sized multi-data terahertz noninvasive sign detection.

The invention provides a twisted stacked resonant tunneling device, which comprises a ReSe2 / h-BN / ReSe2 Van der Waals heterostructure formed in a twisted stacked mode, the ReSe2 / h-BN / ReSe2 Van der Waals heterostructure comprises a top layer ReSe2, a bottom layer ReSe2 and an h-BN layer sandwiched between the top layer ReSe2 and the bottom layer ReSe2, each layer is of a thin layered structure, the top layer ReSe2 and the bottom layer ReSe2 are made of the same anisotropic material, and the h-BN layer is made of the same anisotropic material. The top layer ReSe2 and the bottom layer ReSe2 respectively have 3-6 layer thicknesses, the top layer ReSe2 and the bottom layer ReSe2 have the same layer number or different layer numbers, the h-BN layer has 3-5 layer thicknesses, and the top layer ReSe2 rotates by a distortion angle in a range of 1.8-160 degrees relative to the bottom layer ReSe2, so that the resonant tunneling device has negative differential resistance performance. The invention also provides a preparation method of the twisted stacked resonant tunneling device, an inverter comprising the twisted stacked resonant tunneling device, and a photoelectric detector comprising the twisted stacked resonant tunneling device. The crystal lattice orientation can be adjusted by changing the distortion angle, the obvious negative differential resistance is shown, the peak-to-valley ratio is increased, and the maximum PVR value can be achieved at the distortion angle of 102 degrees.

The application discloses an adaptive encryption method based on resonance tunneling diode current-voltage simulation, which comprises the following steps: solving a Schrodinger-Poisson model by utilizing a fourth-order compact difference format coupling on an initial grid; calculating an encryption indicator of each subinterval on an existing grid, and encrypting the grid according to an encryption strategy until a predetermined grid encryption requirement is met, so that a final calculation grid is obtained; solving the Schrodinger-Poisson model by utilizing the compact difference format coupling on the obtained local encryption grid, and then obtaining convergent electron density and potential energy function; and calculating a current density according to a Tsu-Esaki formula within a specified bias range, constructing a current-voltage characteristic curve through a numerical analysis tool, and realizing simulation of a negative differential resistance effect. While ensuring the solution accuracy of physical quantities such as electron density and current density, the application effectively controls the size of the grid, significantly reduces the calculation amount, and greatly improves the calculation efficiency.

The present invention discloses a p-NiO or p-LiNiO / n-GaN heterojunction resonant tunneling diode, and its structure includes: a substrate layer; a GaN layer grown on the substrate layer; an n-GaN layer grown on the GaN layer; an n+GaN layer grown on the n-GaN layer; an n++GaN layer grown on the n+GaN layer; a p++NiO layer or a p++LiNiO layer grown on the n++GaN layer; a p+NiO layer grown on the p++NiO layer; or a p+LiNiO layer grown on the p++LiNiO layer; a P-type electrode disposed on the p+LiNiO layer; an N-type electrode disposed on the GaN layer. In the device structure of the present invention, the heavy doping of n++GaN and P++NiO causes the energy band at the pn heterojunction interface to bend, making the valence band of p-NiO higher than the conduction band of n-GaN under zero bias, so as to realize the resonant tunneling of carriers by adjusting the bias voltage.

The invention provides an infrared detector and a preparation method thereof, and relates to the technical field of infrared photoelectric devices and preparation. The infrared detector comprises a substrate; the material layer is located above the substrate, the material layer comprises a gain region, a second absorption region and a first absorption region which are sequentially stacked from bottom to top, the gain region is composed of a potential well layer and potential barrier layers located on the two sides of the potential well layer and used for regulating and controlling the signal gain of infrared signals in the infrared detector, and the second absorption region and the first absorption region are made of different absorption materials; the infrared absorber is used for absorbing infrared light with different wavelengths. A double-barrier resonance tunneling structure is selected to provide internal gain, and double absorption regions made of different cut-off wave band materials are used, so that high-responsivity wide-spectrum infrared detection is realized.

The present invention discloses a terahertz detector circuit structure based on a resonant tunneling diode, which belongs to the field of terahertz wireless communication. It comprises three parts: a resonant tunneling diode RTD, a low-pass filter and a biasing device BIASTEE. Among them, the resonant tunneling diode RTD acts as a nonlinear device to detect the received terahertz signal, the low-pass filter is mainly used to pass the detection signal and block the high-frequency carrier signal, and the biasing device BIASTEE is used for DC feeding and the passage of the detection signal. After adding a DC bias through the biasing device BIASTEE, the resonant tunneling diode RTD operates in the nonlinear region and detects and demodulates the received terahertz signal. The present invention has the advantages of simple structure, small size and low cost, and has important application value in the field of ultra-high-speed wireless communication.

The invention discloses a waveguide-packaged terahertz resonant tunneling diode hybrid integrated oscillator, which belongs to the technical field of terahertz wireless transceiving and comprises a coplanar waveguide LC and RTD hybrid integrated oscillating circuit, a microstrip-waveguide transition structure, a DC bias filter circuit and a standard rectangular waveguide output structure. The coplanar waveguide LC and RTD hybrid integrated oscillating circuit comprises a substrate, and a coplanar waveguide transmission line, a coplanar waveguide inductor L, an MIM capacitor C, an RTD device and two stable resistors which are located above the substrate. And the RTD device is bonded right above a connection point of the coplanar waveguide transmission line and the coplanar waveguide inductor L in an inverted buckling manner through a conductive adhesive. The RTD device and the substrate circuit are mixed and integrated, flexible matching design can be carried out according to the actual conditions of the RTD device and the substrate circuit, and on the premise that the oscillation starting effect is guaranteed, the advantages of being low in cost, high in design flexibility, fast in iteration and the like are achieved.

The invention discloses a terahertz hybrid integrated resonant tunneling diode detector packaged by a metal waveguide, and belongs to the technical field of terahertz wireless transceiving, the terahertz hybrid integrated resonant tunneling diode detector comprises an RTD tube core, a substrate circuit and a metal waveguide packaging structure, the substrate circuit comprises a substrate, an A-surface circuit and a B-surface metal ground, and the A-surface circuit and the B-surface metal ground are located above and below the substrate; the A-surface circuit comprises a resonance circuit, a microstrip E-surface probe of a microstrip-waveguide conversion structure, a bias filtering structure and a bias pad which are connected in sequence; the resonance circuit comprises a double-opening resonance ring, an MIM capacitor and a shunt resistor, the MIM capacitor and the shunt resistor are located at the opening position of the double-opening resonance ring, parallel split branches are arranged in the double-opening resonance ring in the signal transmission direction, and the RTD tube core is located at the split position of the parallel split branches. According to the invention, detection and oscillation can be realized at the same time, the device can be cascaded with a mixer packaged by a metal waveguide, the device has the advantage of expandability, and compared with monolithic integration, the device has the advantages of low cost, high design flexibility, fast iteration and the like on the premise of ensuring the detection effect.

The invention provides a resonant tunneling photodiode, and relates to the technical field of infrared photoelectric devices. The resonant tunneling photodiode includes: a substrate; the material layer is located above the substrate, the material layer comprises an absorption region and a gain region and is used for regulating and controlling the signal gain of the infrared signal, and the gain region comprises a lower potential barrier layer; the potential well layer is positioned above the lower potential barrier layer; the upper potential barrier layer is located above the potential well layer, and the upper potential barrier layer and the lower potential barrier layer are of an asymmetric structure or are different in material design. According to the invention, the asymmetric double-barrier resonant tunneling structure is introduced, and the lower barrier layer close to the absorption region side is made of a material with a higher barrier height or a larger barrier thickness, so that compared with an existing symmetric barrier structure, the differential conductance of the device and the lifetime of accumulated minority carriers are optimized at the same time, and the responsivity is enhanced.

The invention discloses a self-adaptive encryption method based on resonant tunneling diode current-voltage simulation. The self-adaptive encryption method comprises the following steps: coupling and solving a Schrodinger-Poisson model on an initial grid by using a four-order tight difference format; calculating an encryption indicator of each subinterval on the existing grid, and encrypting the grid according to an encryption strategy until a preset grid encryption requirement is met, so as to obtain a final calculation grid; on the obtained local encrypted grid, coupling and solving a Schrodinger-Poisson model by using a tight difference format, and further obtaining a convergent electron density and potential energy function; in a specified bias voltage range, the current density is calculated according to a Tsu-Esaki formula, a current-voltage characteristic curve is constructed through a numerical analysis tool, and simulation of the negative differential resistance effect is achieved. According to the method, the solving precision of physical quantities such as electron density and current density is ensured, meanwhile, the scale of the grid is effectively controlled, the calculation amount is remarkably reduced, and therefore the calculation efficiency is greatly improved.

Aspects and embodiments provide a transceiver comprising: a transmit signal path; a receive signal path; bidirectional amplification circuitry reconfigurable for use in both the transmit signal path or receive signal path. The amplification circuitry includes at least one resonant tunnelling diode; and the control circuitry is configured to selectively couple the amplification circuitry into the transmit or receive path of the transceiver in dependence upon whether the transceiver is to operate to transmit or receive a signal. The compact and energy efficient transceiver system in accordance with aspects and embodiments recognises that the physical properties of resonant tunnelling diodes provide a mechanism for simplification of transceiver circuitry and may enable transceiver arrangements which can operate in the high mm-wave and terahertz frequency ranges.