A method for making GaMnN sparse magnetic semiconductor nano wire

Abstract

The invention discloses a method for preparing GaMnN dilute magnetic semiconductor nanowires. The method of the present invention comprises the following steps: 1) Mn doping: in-situ doping Mn on Ga2O3 nanowires; 2) ammoniation: ammoniating Ga2O3 nanowires doped with Mn under an ammonia atmosphere to obtain GaMnN dilute Magnetic semiconductor nanowires. The method of the invention is simple and requires less equipment, the prepared GaMnN nanowire has strong ferromagnetism, the Curie temperature is higher than room temperature, and its magnetic doping concentration is controllable, the nanowire has high purity, large output, and linear shape control (adjustment of growth parameters such as air pressure can prepare nanowires with a diameter of tens of nanometers to hundreds of nanometers), and can be used for spin field effect transistors (spin-FETs), spin light-emitting diodes (spin-LEDs), and spin resonance The fabrication of nano-spintronic devices such as spin-RTD has broad application prospects.

Description

technical field [0001] The invention relates to a method for preparing nanowires, in particular to a method for preparing GaMnN dilute magnetic semiconductor nanowires. Background technique [0002] The room temperature ferromagnetism of dilute magnetic semiconductor materials is an important property of whether it can be used in the manufacture of spintronic devices. As a wide bandgap semiconductor material, GaN has excellent optical and electrical properties. In theory, GaN doped with Mn will make It has a ferromagnetic order higher than room temperature, so GaMnN dilute magnetic semiconductor materials are current research hotspots. However, due to the low solid solubility of magnetic ions in semiconductors, it is still very difficult to prepare highly doped GaMnN dilute magnetic semiconductor materials with Mn replacing lattice cations by traditional methods. Moreover, it has been reported in the literature that using the above method If the doping concentration of Mn i...

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Problems solved by technology

However, due to the low solid solubility of magnetic ions in semiconductors, it is still very difficult to prepare highly doped GaMnN dilute magnetic semiconductor materials with Mn replacing lattice cations by traditional methods. Moreover, it has been reported in the literature that using the above method If the doping concentration of Mn in GaN is greater than 3at.% during preparation, Mn ions will fill in the lattice gap instead of replacing Ga, thus forming Ga x mn y Crystal grains affect the magnetic properties of the material, and there is a problem of magnetic impurity phase precipitation

People such as Deepak (F.L.Deepak, P.U.Vanitha, A.Fovindaraj, C.N.R.Rao, Chem.Phys.Lett.374 (2003) 314) utilize carbon nanotube as template, have prepared GaMnN dilute magnetic semiconductor nanowire, but sample yield is relatively low few

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