A method for making GaMnN sparse magnetic semiconductor nano wire

A dilute magnetic semiconductor and nanowire technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as material difficulties, magnetic impurity phase precipitation, and low sample yield

Inactive Publication Date: 2008-02-20
PEKING UNIV
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Problems solved by technology

However, due to the low solid solubility of magnetic ions in semiconductors, it is still very difficult to prepare highly doped GaMnN dilute magnetic semiconductor materials with Mn replacing lattice cations by traditional methods. Moreover, it has been reported in the literature that using the above method If the doping concentration of Mn in GaN is greater than 3at.% during preparation, Mn ions will fill in the latti

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  • A method for making GaMnN sparse magnetic semiconductor nano wire
  • A method for making GaMnN sparse magnetic semiconductor nano wire

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Embodiment 1

[0019] 1. GaMnN dilute magnetic semiconductor nanowires were prepared in large quantities by oxide ammoniation method.

[0020] A Si sheet coated with a 5nm gold film was used as the collection substrate of the product, and the MnCl 2 4H 2 A small ceramic cup of O powder, a gallium source substrate (a Si sheet with 100 mg of gallium metal placed on it) and three collection substrates were put into a quartz boat with one end open in turn, and the small ceramic cup was about 10 cm away from the gallium source substrate. Then place the quartz boat in the center of the tube furnace with the open end facing the direction of the airflow. After closing the system, turn on the mechanical pump to evacuate to a vacuum, pass in argon gas for cleaning, and raise the system pressure to normal pressure, and repeat this three times. After the experiment started, the required pressure (0.6-0.9 standard atmospheric pressure) was maintained by manually controlling the needle valve, and the he...

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Abstract

The utility model discloses a method for preparing the GaMnN diluted magnetic semiconductor nanowire, comprising the following steps: 1) Mn doping: Mn is in-situ doped on the Ga2O3 nanowire; 2) ammonification: the Ga2O3 nanowire doped with the Mn is aminated in the ammonia atmosphere to obtain the GaMnN diluted magnetic semiconductor nanowire. The utility model has the advantages of simple method, low requirement for the equipment, strong ferromagnetism of the prepared GaMnN nanowire, higher Curie temperature than the ambient temperature, controllable magnetic doping concentration, high purity of the nanowire, high output and controllable linear (the nanowire with diameter varying from tens of nanometer to hundreds of nanometer is prepared through adjusting the growing parameters such as air pressure). The utility model is applied for producing the nanometer spin electronic devices, such as spin field effect transistor (spin-FET), spin light emitting diode (spin-LED) and spin resonance tunneling device (spin-RTD) and has broad application prospect.

Description

technical field [0001] The invention relates to a method for preparing nanowires, in particular to a method for preparing GaMnN dilute magnetic semiconductor nanowires. Background technique [0002] The room temperature ferromagnetism of dilute magnetic semiconductor materials is an important property of whether it can be used in the manufacture of spintronic devices. As a wide bandgap semiconductor material, GaN has excellent optical and electrical properties. In theory, GaN doped with Mn will make It has a ferromagnetic order higher than room temperature, so GaMnN dilute magnetic semiconductor materials are current research hotspots. However, due to the low solid solubility of magnetic ions in semiconductors, it is still very difficult to prepare highly doped GaMnN dilute magnetic semiconductor materials with Mn replacing lattice cations by traditional methods. Moreover, it has been reported in the literature that using the above method If the doping concentration of Mn i...

Claims

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Application Information

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IPC IPC(8): H01L21/18
Inventor 俞大鹏宋祎璞王朋伟
Owner PEKING UNIV
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