Near infrared detector based on resonance tunneling effect

A resonant tunneling and detector technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc. The effect of reducing shot noise

Inactive Publication Date: 2015-11-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to enhance the binding effect of quantum dots on photogenerated holes and suppress noise, this type of detector often requires a very low operating temperature, which greatly limits the application field of this type of detector

Method used

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  • Near infrared detector based on resonance tunneling effect
  • Near infrared detector based on resonance tunneling effect
  • Near infrared detector based on resonance tunneling effect

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Embodiment Construction

[0020] It should be noted that implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. In addition, the directional terms mentioned in the following embodiments only refer to the directions of the drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

[0021] In an exemplary embodiment of the present invention, a molecular beam epitaxy technique is provided, according to figure 1 The structure shown, the method for preparing a high-sensitivity near-infrared detector.

[0022] First, the epitaxial growth thickness is 100nm and the doping concentration is 2×10 o...

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Abstract

The invention provides a near infrared detector based on a resonance tunneling effect. The major structure of the near infrared detector is a resonance tunneling diode, yet a double-barrier structure frequently used by the resonance tunneling diode is changed to a three-barrier structure, so that shot noise of the detector is inhibited, and an absorption layer is grown in an epitaxial mode between the three-barrier structure and a collector electrode. According to the invention, positive bias is applied when the detector works, near infrared light is incident from the collector electrode, a photoproduction electron-hole pair is generated at the absorption layer, and a photoproduction hole drifts towards the direction of the three-barrier structure under the effect of an electric field and is accumulated at the interface between the double-barrier structure and the absorption layer, such that electric potential at the two sides of the three-barrier structure is changed. The detector provided by the invention has quite high responsibility at a room temperature.

Description

technical field [0001] The invention relates to a near-infrared detector, in particular to a structural design of a high-sensitivity near-infrared detector device that can work at room temperature based on a resonant tunneling effect. Background technique [0002] High-sensitivity near-infrared light detection has broad application prospects in low-light night vision, precise guidance, laser three-dimensional imaging, space remote sensing, etc. Detection technology is placing ever higher demands. At present, the most widely used detector type in the near-infrared band is the avalanche diode. Its working mechanism is based on the multiplication phenomenon of photogenerated carriers in the multiplication region. In order to achieve higher sensitivity, the avalanche diode needs to work in the Geiger mode. , which requires a high operating voltage and will inevitably increase excess noise and post-pulse counts. Therefore, the exploration and research of high-performance new ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/88H01L29/06H01L21/329
CPCH01L29/882H01L29/0688H01L29/66219
Inventor 王广龙董宇倪海桥陈建辉高凤岐乔中涛裴康明牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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