A Gan-based High Voltage Rectifier Resonant Tunneling Diode

Abstract

The invention relates to a GaN-based high-voltage rectification resonant tunneling diode. The present invention includes planar GaN substrates, n + -In 0.07 Ga 0.93 N collector layer, i‑In 0.07 Ga 0.93 N first spacer layer, AlGaN first barrier layer, i‑In 0.14 Ga 0.86 N quantum well layer, GaN second barrier layer, i‑In 0.21 Ga 0.89 N second isolation layer, n + -In 0.21 Ga 0.89 N emitter layer, passivation layer, collector metal electrode pins and emitter metal electrode pins. This kind of GaN-based high-voltage resonant tunneling diode—HVRTD has volt-ampere characteristics of high forward blocking voltage and reverse ultra-low resistivity, and its manufacturing process is compatible with GaN-based integrated devices and circuits (including circuits, optical circuits, magnetic circuits, It is compatible with the micro-nano integrated manufacturing process of gas circuit, mechanical circuit and composite circuit, and is very suitable for ESD protection applications of GaN-based integrated devices and circuits. It can withstand ±2000V ESD within an approximately ideal time of 840ns to ensure GaN-based integrated devices and The road is not damaged.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor quantum devices, in particular to a GaN-based high-voltage rectifying resonant tunneling diode (HVRRTD). Background technique [0002] For conventional GaN / AlGaN resonant tunneling diode (RTD) devices, due to the significant spontaneous polarization effect of the GaN / AlGaN barrier layer and the significant piezoelectric polarization effect under the action of an applied voltage, the GaN / AlGaN barrier layer will form polarized electric field. Due to the constraints of the intrinsic structure of GaN / AlGaN materials and the kinetics of epitaxial growth on the surface, for the c-plane epitaxial growth, the epitaxial growth of high-quality GaN / AlGaN nanofilms has the same initial polar plane as the final polar plane. If the upper surface of the GaN substrate is c-plane, that is, the polarity of the Ga surface, the direction of the polarization electric field in the AlGaN barrier layer i...

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Problems solved by technology

[0012] The core protection devices used in the above ESD protection schemes are all silicon-based devices. Although they are widely used in the ESD protection of silicon-based integrated devices and circuits, they are difficult to be directly used in the ESD protection of GaN-based integrated devices and integrated circuits due to process compatibility issues.

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