77 results about "Polar plane" patented technology

An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.

A semiconductor light emitting device has a device body made of a group III nitride semiconductor having a major surface defined by a nonpolar plane. In the device body, a contact portion with an n-type electrode includes a crystal plane different from the major surface. For example, the contact portion may include a corrugated surface. More specifically, the contact portion may include a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.

A light emitting element includes a group III nitride semiconductor substrate that emits a light by absorbing a UV ray and a light emitting diode structure. The light emitting diode structure is formed of a group III nitride semiconductor grown on the group III nitride semiconductor substrate, and has a p-type layer, an active layer that emits a light having a wavelength in the UV region, and an n-type layer. It is preferable that the group III nitride semiconductor substrate has a principal plane of a non-polar plane or a semi-polar plane and the group III nitride semiconductor having a same plane orientation as that of the principal plane is grown on the principal plane.

One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

The invention discloses a proportional electromagnetic valve for an electrically controlled high-pressure common-rail fuel injection system of a diesel engine and relates to an electromagnetic valve. A position at which a fixed iron core (8) and a movable iron core (3) of the electromagnetic valve attract each other is a conical polar plane. The fixed iron core (8), the movable iron core (3), a guide pipe (18), a spiral spring (15), an electromagnetic coil (4), a square iron core (19), a shell (14) and a valve body (1) jointly form the electromagnetic valve in an assembling way. When driving current is input into the electromagnetic coil, a magnetic field is generated through a magnetic path in the valve, electromagnetic force with magnitude which is in proportion with the magnitude of the driving current and is not related to a stroke is generated relative to the movable iron core, the movable iron core is enabled to overcome spring force to move, the movable iron core stops moving at a balance point of the two kinds of force and therefore is kept at a stable position, and the movable iron core can proportionally and continuously move according to the magnitude of the driving current to control the opening of the valve. Under complex working conditions under which the diesel engine works, the electromagnetic valve not only can stably control the on/off of a fuel path, but also can accurately and proportionally control the flow of the fuel path according to the driving current.

A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.

The invention discloses a depth extraction method of a light field image. The method of the present invention includes two stages: light field reconstruction and depth extraction, and the light field reconstruction stage includes: S1: after preprocessing the input light field data, reconstruct the light field according to the image center position of the image, Generate a multi-viewpoint image; the depth extraction stage includes: S2: extracting a polar plane map from the viewpoint image, calculating a disparity map, and optimizing to obtain an optimal depth map. The invention can obtain clear multi-viewpoint images after processing the light field data and perform accurate depth extraction.

The invention belongs to the field of three-dimensional reconstruction technology, and relates to a multi-view stereo matching three-dimensional reconstruction method of a disordered image. According to the method of the invention, at a view selection algorithm part, 1), for aiming at a global view selection process, firstly a decision condition is introduced; and furthermore the number of views in a candidate view set is fixed adaptively instead of the view set with fixed number of views. No scoring is performed on the views which do not satisfy a condition in an algorithm. Along with continuous expansion of an application range, the number of views in an experiment data set gradually increases, and reduction of view selection time is very important. 2), For a local view algorithm, the method improves a weight influence factor of a polar plane included angle between a neighbor view and a reference view, so that the selected neighbor view is more accurate and more representative. 3), In a view matching area increasing process, the invention provides an adaptive shape space plane sheet algorithm, an adaptive shape can adaptively adapt boundary information, thereby better matching a result.

The invention relates to a high speed maglev train guiding and eddy current braking integrative electromagnet device, comprising a plurality of magnetic poles arranged along the advancing direction of train; wherein the polar plane of the magnetic pole is parallel with a guide rail plane, adjacent magnetic poles are connected in series, thus forming a plurality of groups, and the polarities of each group of magnetic poles arranged on the same polar plane of the electromagnet are consistent, structure is simple, and function is reasonable. The magnetic poles which are uniformly distributed at the two sides of a complete train are changed, so that the polarities of a plurality of magnetic poles arranged on the same polar plane of the electromagnet at each side of the complete train are the same or alternately changed, so as to realize vehicle guiding and eddy current braking functions. The existing special eddy current braking device is not required, thus simplifying structure of system. The electromagnet used for eddy current braking only in the prior art is changed into the guiding and eddy current braking integrative electromagnet of the invention, namely a pair of guiding electromagnets are added for the complete train, guiding capacity of the complete train is improved by 1/7, and guiding force and eddy current braking force can be more uniformly distributed at the two sides of the train, braking effect is better, and damage to train structure can be effectively inhibited.

A semiconductor device includes a substrate which is composed of a zinc oxide semiconductor having a hexagonal crystal structure and includes a first principal surface which is a polar plane; and four side surfaces which are adjacent to the first principal surface, the side surfaces being orthogonal to the principal surface and are at angles of 40 to 50 degrees to a base nonpolar plane orthogonal to the first principal surface; and a semiconductor layer provided on the first principal surface.

An identification and space positioning device for fished targets based on an omni directional vision comprises an ODVS (omni directional vision sensor), and a microprocessor for analyzing and processing the identification and space positioning of fished targets. The ODVS comprises two fixed single viewpoint dead-angle-free omni directional vision sensors with the same parameter. The two omni directional vision sensors are fixedly connected in a perpendicularly back-to-back manner according to an omni polar plane requirement. The invention further discloses an identification and space positioning method for fished targets based on the omni directional vision. The invention adopts the ODVS to solve the problem about image acquisition for identification and space positioning of deep sea fished targets, can provide the omni directional vision for fishing robot navigation at the same time, and has the advantages of low calculated amount for stereo matching of feature points, high spatial orientation and the like.

The invention discloses an air-filled ultrasonic transducer. The air-filled ultrasonic transducer comprises a piezoelectric layer with a plurality of array structures, a matching layer superimposed ona negative polar plane of the piezoelectric layer, a transition backing arranged on a positive polar plane of the piezoelectric layer and used for performing sound absorption and protection on the plural array structures, slits arranged on the transition backing in match with gaps of the array structures and extend from the transition backing to predetermined positions on the matching layer, anda main backing arranged on the transition backing. The main backing and the transition backing are connected by adopting an adhesive layer, so that protection on the slits is allowed; and thus, filling of the gaps of the array structures by air is realized. The slits of the air-filled ultrasonic transducer extend from the transition backing to the predetermined positions on the matching layer, sothat the matching layer is not cut through; and thus, a complete protective surface used for protecting the array structures is formed. Moreover, due to viscosity of the adhesive layer between the transition backing and the main backing, glue of the adhesive layer will not enter the gaps between the array structures, so that filling of the gaps of the array structures by air is realized.

The problems addressed by the present invention lies in providing a Group III nitride semiconductor substrate having a principal plane on which high-quality crystals can be grown and also providing a method for producing a Group III nitride semiconductor substrate capable of obtaining a crystal which has few stacking faults and in which stacking faults in directions parallel to the polar plane in particular have been greatly suppressed. The problem is solved by means of a Group III nitride semiconductor substrate having a plane other than a C plane as a principal plane, wherein a ratio (W1/W2) of a tilt angle distribution W1 of the principal plane in the direction of a line of intersection between the principal plane and the C plane to a tilt angle distribution W2 of the principal plane in a direction orthogonal to the line of intersection is less than 1.

A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.

Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

Disclosed is a semiconductor-stacked substrate having a substrate, and a plurality of semiconductor layers which are different in thermal expansion coefficient from the substrate, and are formed in a plurality of regions of a surface of the substrate, respectively. Each semiconductor layer has a growth plane that is a nonpolar plane or a semi-polar plane, and has different thermal expansion coefficients between along a first axis and a second axis orthogonal to each other and parallel to the surface of the substrate. The following mathematical formula 1 is satisfied. D1 and ρ1 represent, respectively, the length and the curvature radius of the semiconductor layer in a direction which passes through a point where the deformation amount of the semiconductor layer is largest and is parallel to the first axis direction. D2 and ρ2 represent those of the second axis direction.

Materials, methods, structures and device including the same can provide a semiconductor device such as an LED using an active diode region corresponding to a non-polar face or surface of III-V semiconductor crystalline material. In some embodiments, an active diode region contains more non-polar III-V material oriented to a non-polar plane than III-V material oriented to a polar plane. In other embodiments, a bottom diode region contains more non-polar m-plane or a-plane surface area GaN than polar c-plane surface area GaN facing an active diode region.

In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and degradation of element characteristics due to crystal defects can be suppressed. Further, because the a-plane is a nonpolar plane, improved light emission efficiency and longer wavelengths can be achieved compared with the c-plane, which is a polar plane. Hence a semiconductor laser manufacturing method of this invention enables further improvement of the element characteristics of the semiconductor laser to be fabricated.

In_yGa_1-yN (0<y<1) layers whose principal surface is a non-polar plane or a semi-polar plane are formed by an MOCVD under different growth conditions. Then, the relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant is determined based on a growth condition employed for formation of In_xGa_1-xN (0<x<1) layers whose emission wavelengths are equal among the In_yGa_1-yN layers. Then, a saturation point is determined on a curve representing the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. Under a growth condition corresponding to this saturation point, an In_xGa_1-xN layer is grown.

The invention relates to a light field image quality evaluation method based on polar plane linear similarity. The method belongs to the field of image processing, is provided according to the sensitivity to scene structure change when a human vision system understands a light field image and rich scene structure change information contained in the light field image, and comprises the following steps: respectively extracting a polar plane graph from a reference light field image and a distorted light field image; extracting inear feature maps of the reference polar plane graph and the distortion polar plane graph, and acquiring a polar plane linear feature similarity map through calculation; and obtaining a final distorted light field image quality evaluation value based on the polar planelinear similarity graph. According to the method, the scene structure change in the light field image is described by fully utilizing the polar plane linear characteristics, so that the quality of the distorted light field image is evaluated, the subjective perception degree of a human eye subjective vision system on the light field image is reflected, and the light field image quality evaluationperformance is relatively good.

The invention relates to a light field image quality evaluation method based on polar plane multi-scale Gabor feature similarity. The method comprises the following steps of respectively extracting the polar planes from a reference light field image and a distorted light field image; respectively calculating the Gabor feature maps of the reference polar plane graph and the distortion polar plane graph under three scales and four directions; respectively fusing the Gabor feature maps of the same scale and different directions of the reference polar plane graph and the distorted polar plane graph to obtain a polar plane multi-scale Gabor feature map, and further calculating to obtain a polar plane multi-scale Gabor feature similarity map; and obtaining a final distorted light field image quality evaluation value based on the polar plane multi-scale Gabor feature similarity graph. According to the method, the detail information of the polar plane image is described by utilizing the polarplane multi-scale Gabor characteristics, so that the change of the scene structure in the light field image is reflected, and the method has better light field image quality evaluation performance.

A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type Al_XGa_1-XN (wherein X is a rational number satisfying 0.5≤X≤1.0), an active layer, a layer represented by p-type Al_YGa_1-YN (wherein Y is a rational number satisfying 0.5≤Y≤1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 μm.