8 results about "Polar plane" patented technology

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.

The invention discloses a naked-eye 3D imaging method, and relates to the technical field of naked-eye 3D, and the method comprises the steps: employing a binocular camera or a light field camera to obtain multi-angle data, enabling the distance between cameras to change according to a target distance through dynamic baseline adjustment, increasing a baseline in a long distance to improve the depth-of-field resolution, and reducing the baseline in a short distance to enhance the local stereoscopic impression; meanwhile, in combination with an AI depth-of-field prediction model, a low-light environment and a high-reflectivity surface are subjected to deep optimization treatment, and errors caused by light interference are reduced; in the depth calculation process, an optical flow analysis method is adopted, a pixel motion vector field is calculated through a Horn-Schunck optical flow, the stability of optical flow calculation is optimized in combination with Kalman filtering, parallax matching or optical field reconstruction is performed based on an optical flow calculation result, for a binocular camera mode, a block matching method is adopted to calculate parallax, and the optical field is reconstructed. And in the light field camera mode, depth reconstruction is carried out by using an EPI polar plane parallax estimation algorithm.

The invention discloses a light field image multi-dimensional feature extraction and modeling method for an image enhancement task. The method comprises the following steps: S1, inputting sub-view image features of a light field image; s2, the sub-view image features are input into a space branch, a polar plane branch and an angle branch in parallel, the space branch is used for extracting and enhancing space details and textures in all view angles, the polar plane branch is used for conducting directional modeling on a polar line structure and parallax information and achieving weighted integration through depth fusion, and the angle branch is used for conducting directional modeling on the polar line structure and parallax information; the angle branch is used for carrying out consistency modeling between visual angles; and S3, fusing the features output by the spatial branch, the polar plane branch and the angle branch to obtain a light field output feature. According to the method, the spatial detail recovery and the angle consistency maintenance of the light field image can be efficiently realized, the polar line structure is prevented from being damaged, the calculation efficiency is optimized, and the real-time processing requirement is met.

The invention discloses a calculation method and device for a satellite VDES load coverage area, a storage medium and calculation equipment, and the method comprises the steps: determining the position and attitude of a satellite according to the orbital element number of the satellite, a designated moment and a satellite working mode; determining the direction of a VDES antenna based on the position and attitude of the satellite and the load installation parameters; based on the VDES antenna pointing, constructing a polar plane of a satellite about the surface of an earth ellipsoid, and determining a parameter equation of a space ellipse where the polar plane intersects with the surface of the earth ellipsoid; according to the parameter equation, traversing angle parameters in the space ellipse to obtain a tangent point track and an intersection point track; and calculating a load coverage area of the VDES antenna based on the tangent point track and the intersection point track. The technical problem that the VDES load coverage area is difficult to calculate in the prior art is solved.

The invention discloses a polar region guiding method based on a polar plane equiangular route, and belongs to the technical field of civil aviation navigation. The method comprises the following steps: acquiring flight data information of an aircraft, establishing a polar plane, and acquiring a course angle of a polar plane equiangular course and a total voyage from a starting point to a terminal point of the polar plane equiangular course; the method comprises the following steps: acquiring a lateral offset distance of a current position of an aircraft relative to a polar plane equiangular course, an azimuth angle deviation of a track azimuth angle relative to a course angle, a height deviation and a speed deviation, acquiring a horizontal guide instruction according to the lateral offset distance and the azimuth angle deviation, acquiring a vertical guide instruction according to the height deviation, and acquiring an accelerator opening increment instruction according to the speed deviation; and guiding the flight of the aircraft according to each instruction. According to the method, the polar plane and the polar plane equiangular route are constructed, the aircraft is projected to the polar plane to calculate the navigation parameters, and the guidance instruction is calculated based on the navigation parameters to realize high-precision guidance of the aircraft, so that the problem that an existing flight guidance scheme cannot realize accurate guidance in the polar region is solved.

This invention discloses a spatiotemporal dynamic intelligent analytical identification method for identifying potential hazards encountered by ships using a sphere-manifold topology. The method includes the following steps: First, the relative position data of multiple discrete, linear target ships within a two-dimensional sea plane relative to the ship itself are transformed into continuous, non-Euclidean spatial projection coordinates on a three-dimensional sphere surface using a ship spatial position mapping mechanism based on spherical polar plane projection. Second, based on the spherical projection point coordinates of multiple target ships, the ship's linear planar trajectory is transformed into a fitted and predicted manifold curve trajectory on a sphere model. Third, the sphere model is divided into elliptical hazard zones. Finally, based on the manifold curve trajectory on the ship's sphere model, the hazard level during the ship's navigation process is matched to determine the hazard level during the ship's navigation process.

The application discloses a preparation method of a semi-polar surface GaN film based on van der Waals epitaxy, a semi-polar surface GaN film and application, and the preparation method comprises the following steps: preparing a semi-polar surface aluminum nitride as a substrate; preparing a doped graphene layer; transferring the doped graphene layer to the semi-polar surface aluminum nitride; and growing a GaN film on the doped graphene layer by van der Waals epitaxy to obtain the semi-polar surface GaN film. The preparation method of the semi-polar surface GaN film based on van der Waals epitaxy adopts a semi-polar AlN substrate to prepare a semi-polar surface GaN film based on remote epitaxy in van der Waals epitaxy, and boron-doped graphene or nitrogen-doped graphene is adopted, so that the prepared semi-polar surface GaN can eliminate polarization effect, and provides a key material basis for high-performance green / yellow-orange light LEDs, lasers and power electronic devices.

The application discloses an active region structure of a non-polar plane GaN-based terahertz quantum cascade laser, characterized in that the active region has multiple periods of three-well structure, wherein the potential well layer is GaN and the potential barrier layer is AlGaN; and a corresponding non-polar plane GaN-based terahertz quantum cascade laser. An active region structure of a two-well structure and a laser are also disclosed. The application discloses two active region structures of a three-well resonant phonon and a two-well phonon scattering injection terahertz quantum cascade laser based on a non-polar plane GaN, when the doping is 6*10 10 cm ‑2 , the peak gain of the two structures at 10K is 90.1 and 91.3 cm ‑1 , respectively, at 300K, the peak gain of 41.8 and 44.2 cm ‑ 1 is obtained at 8.2 and 7.7 terahertz, which is higher than the calculated double-metal waveguide loss. The overall results show that at room temperature, a GaN-based terahertz quantum cascade laser is possible at about 8 terahertz.