The invention provides a blue LED epitaxial structure with a suppression polarization effect barrier layer, and relates to the technical field of light emitting diodes. The blue LED epitaxial structure comprises a substrate, an AlN buffer layer, a U-type GaN layer, an N-type GaN layer, a shallow quantum well layer, an active region, an electron blocking layer, and a P-type GaN layer in sequence from bottom to top, the suppression polarization effect barrier layer is inserted between the shallow quantum well layer and the active region, and the suppression polarization effect barrier layer comprises an AlxGal-xN layer and a SiN layer from bottom to top. According to the blue LED epitaxial structure, a novel barrier layer is inserted into the conventional epitaxial structure, the stress is released, polarization is suppressed, the defect density is reduced, the radiative recombination probability is improved, the polarization effect is reduced, and the quantum efficiency in the LED is improved.