Solid state cooling or power generating device and method of fabricating the same

A solid-state cooling and device technology, applied in thermoelectric devices, electro-solid devices, electrical components, etc., can solve the problem of low device efficiency, reduce size, and ensure robustness and reliability.

Inactive Publication Date: 2009-05-20
BEAKON TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High cooling power has been reported; however, the efficiency of the device is still low due to the large applied electric field

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid state cooling or power generating device and method of fabricating the same
  • Solid state cooling or power generating device and method of fabricating the same
  • Solid state cooling or power generating device and method of fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Tunneling vacuum gap heat pumps as discussed in the background section have the potential to deliver very high efficiencies compared to Peltier elements in eg cooling devices. However, it has been shown that the desired theoretical calculations and simulations are difficult to achieve with existing fabrication methods. The main problem with vacuum gap heat pumps proposed in the art lies in the requirement 1 -50 order of magnitude vacuum gap and about 1cm 2 area to be able to provide commercially interesting products. Providing such large electrodes with gaps of this magnitude is not possible with today's known methods, at least with regard to acceptable yields. Surface roughness, impurities, etc. will inevitably cause large variations in the gap width, and may cause contact between electrodes at some point to seriously impair the function of the heat pump.

[0037] According to the invention, a nanoscale semiconductor heterostructure is provided on at least one el...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a solid state cooling/power generating device is provided comprising a first and second electrode separated by a vacuum gap. According to the present invention at least one of the electrodes is provided with a nanoscaled semiconductor heterostructure 301, which comprises at least one quantum well which in combination with the vacuum gap 315 forms a double barrier resonance structure providing conditions which allows resonant tunneling between the first and second electrode.

Description

technical field [0001] The present invention relates to a solid state cooling and / or power generating device. In particular, the present invention relates to a heat pump comprising a nanoscale semiconductor heterostructure. Background technique [0002] Interest in solid state cooling devices has grown significantly in recent decades. Solid-state cooling devices are driven directly by electric current, while the simultaneous cooling and heating of different parts of the device is due to the thermoelectric effect. Solid state cooling devices are generally not as efficient as conventional refrigerators but have the advantage of not relying on moving mechanical parts or requiring potentially harmful heat transfer fluids. These features, together with the fact that solid state cooling devices can be made much smaller than conventional refrigeration devices, make solid state cooling devices well suited for cooling electronic devices and even individual microchips. The physical...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): F25B21/00H01J21/02H01L37/00H01L49/00H01J19/24
CPCF25B2321/003Y02B30/66Y02B30/00
Inventor M·海弗特
Owner BEAKON TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap