Transistor based on bibarrier tunnel junction resonance tunneling effect

A resonant tunneling and tunnel junction technology, applied in transistors, diodes, semiconductor devices, etc., can solve problems such as large leakage current, lack of control, and difficulty in fabricating double-barrier tunnel junctions
CN1753187AActive Publication Date: 2006-03-29INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2006-03-29

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Abstract

The invention relates to a transistor based on the resonance tunneling effect of double-barrier tunnel junction, comprising: substrate, emitter, base, collector, and first and second tunnel barrier layers, where the first one is arranged between the emitter and base and the second one is between the base and collector; and the areas of tunnel junctions formed between the emitter and base and between the base and collector are 1 sq um-10,000 sq um; thickness of the base is comparable with free stroke of electrons of its material; only one of the emitter, base and collector has a free magnetization direction. Because of double barrier structure, the invention overcomes Schottky barrier generated between the base and collector, where the base current is modulation signal, and makes modulation modes of collector signal and base current similar by changing the magnetization direction of the base or collector, thus making the resonance tunneling effect, and can obtain an amplified signal on proper conditions.
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Description

technical field

[0001] The invention relates to a solid-state switch and amplifying device, that is, a transistor, especially a spin transistor device based on double potential barrier tunnel junction resonant tunneling effect. Background technique

[0002] Since the discovery of the giant magnetoresistance effect (GMR) in magnetic multilayer films in 1988, great progress has been made in the research and application of physics and material science. In 1993, Johnson [M. Johnson, Science 260 (1993) 320] proposed a ferromagnetic metal emitter, a non-magnetic metal base with a thickness smaller than the spin diffusion length, and another ferromagnetic metal collector: " Ferromagnetic metal / nonmagnetic metal / ferromagnetic metal" sandwich all-metal spin transistor. figure 1 is a schematic diagram of this all-metal spin transistor. The speed of this all-metal transistor can be compared with that of semiconductor Si devices, but the energy consumption is 10-20 times lower, the de...

Claims

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