The present invention relates to a
transistor based on resonant tunneling effect of
double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier
layers; wherein the first tunneling
barrier layer is located between the emitter and the base, and the second tunneling
barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm2˜10000 μm2; the thickness of the base is comparable to the
electron mean free path of material in the layer; the
magnetization orientation is unbounded in one and only one pole of said emitter, base and collector. Because the double-barrier structure is used, it overcomes the Schottky potential between the base and the collector. Wherein the base current is a modulating
signal, the collector
signal is modulated to be similar to the base current's modulating mode by changing the
magnetization orientation of the base or the collector, i.e., the resonant tunneling effect occurs. An amplified
signal can be obtained under the suitable conditions.