Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparing method of tantalum disulfide nanocrystal with good dispersity and high fluorescence intensity

A technology with good dispersibility and tantalum disulfide, which is applied in the interdisciplinary fields of physics, chemistry and materials science, can solve the problems that limit wide application, and achieve the effect of good dispersibility and good dispersibility

Inactive Publication Date: 2019-08-13
YUNNAN NORMAL UNIV +2
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But since TaS 2 The continuity of the energy band limits its wide application in the field of optoelectronics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparing method of tantalum disulfide nanocrystal with good dispersity and high fluorescence intensity
  • Preparing method of tantalum disulfide nanocrystal with good dispersity and high fluorescence intensity
  • Preparing method of tantalum disulfide nanocrystal with good dispersity and high fluorescence intensity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Weigh 0.5g TaS at room temperature 2 The powder was fully ground in an agate mortar for 2 hours, 50 mL of N-methylpyrrolidone (NMP) solvent was added to it, and the mixture was crushed in a cell disruptor for 4 hours, and then placed in a centrifuge at 6000 rpm Centrifuge for 25 minutes, take the supernatant as TaS 2 Nanocrystalline solution, protected from light and sealed.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparing method of a tantalum disulfide nanocrystal with good dispersity and high fluorescence intensity. The tantalum disulfide nanocrystal can be widely applied to the field of electronic devices, energy storage, catalytic hydrogen production and the like since the nanocrystal has a specific surface effect, a small-size effect, an interfacial effect, a macroscopic quantum effect and other features. In recent years, the TaS2 nanocrystal serves as a novel transition metal chalcogenide nano-material, when the feature size of TaS2 is equal to or smaller than the de Broglie wavelength or electron mean free path of electrons in three dimensions, movement of the electrons in the material is subjected to three-dimensional limitation, then the TaS2 nanocrystal can be formed, and many electron traps exist on the surface of the nanocrystal, wherein the electron traps play a key role in photoluminescence features of a semiconductor; therefore, endowing the nanocrystalwith a stronger photoelectric property than a bulk material becomes a research hotspot; the tantalum disulfide nanocrystal shows features such as high fluorescence and dispersity, and is hopeful to have a very important value and development prospect when applied to the aspect of field effect transistors, sensors and the like.

Description

technical field [0001] The invention relates to a method for preparing tantalum disulfide nanocrystals with good dispersibility and high fluorescence intensity, in particular to the prepared tantalum disulfide nanocrystals with good dispersibility and high fluorescence intensity, belonging to physics, chemistry and materials science the cross field. Background technique [0002] Tantalum Disulfide (Tantalum Disulfide, TaS 2 ) is a new type of strongly correlated two-dimensional semiconductor material, which is in the form of black powder and has a sheet structure similar to graphene, black phosphorus and other materials, so it also has special optical and electrochemical properties. But since TaS 2 The continuity of the energy band limits its wide application in the field of optoelectronics. Inspired by the quantum size effect and quantum confinement effect, the two-dimensional TaS 2 The preparation of zero-dimensional tantalum disulfide nanocrystals converts continuous ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G35/00C09K11/67
CPCC01G35/00C01P2002/72C01P2004/04C09K11/671
Inventor 李学铭唐利斌周亮亮潘峰杨艳波鲁朝宇梁晶
Owner YUNNAN NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products