Preparing method of tantalum disulfide nanocrystal with good dispersity and high fluorescence intensity
A technology with good dispersibility and tantalum disulfide, which is applied in the interdisciplinary fields of physics, chemistry and materials science, can solve the problems that limit wide application, and achieve the effect of good dispersibility and good dispersibility
Inactive Publication Date: 2019-08-13
YUNNAN NORMAL UNIV +2
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Problems solved by technology
But since TaS 2 The continuity of the energy band limits its wide application in the field of optoelectronics
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Embodiment 1
[0022] Weigh 0.5g TaS at room temperature 2 The powder was fully ground in an agate mortar for 2 hours, 50 mL of N-methylpyrrolidone (NMP) solvent was added to it, and the mixture was crushed in a cell disruptor for 4 hours, and then placed in a centrifuge at 6000 rpm Centrifuge for 25 minutes, take the supernatant as TaS 2 Nanocrystalline solution, protected from light and sealed.
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Abstract
The invention relates to a preparing method of a tantalum disulfide nanocrystal with good dispersity and high fluorescence intensity. The tantalum disulfide nanocrystal can be widely applied to the field of electronic devices, energy storage, catalytic hydrogen production and the like since the nanocrystal has a specific surface effect, a small-size effect, an interfacial effect, a macroscopic quantum effect and other features. In recent years, the TaS2 nanocrystal serves as a novel transition metal chalcogenide nano-material, when the feature size of TaS2 is equal to or smaller than the de Broglie wavelength or electron mean free path of electrons in three dimensions, movement of the electrons in the material is subjected to three-dimensional limitation, then the TaS2 nanocrystal can be formed, and many electron traps exist on the surface of the nanocrystal, wherein the electron traps play a key role in photoluminescence features of a semiconductor; therefore, endowing the nanocrystalwith a stronger photoelectric property than a bulk material becomes a research hotspot; the tantalum disulfide nanocrystal shows features such as high fluorescence and dispersity, and is hopeful to have a very important value and development prospect when applied to the aspect of field effect transistors, sensors and the like.
Description
technical field [0001] The invention relates to a method for preparing tantalum disulfide nanocrystals with good dispersibility and high fluorescence intensity, in particular to the prepared tantalum disulfide nanocrystals with good dispersibility and high fluorescence intensity, belonging to physics, chemistry and materials science the cross field. Background technique [0002] Tantalum Disulfide (Tantalum Disulfide, TaS 2 ) is a new type of strongly correlated two-dimensional semiconductor material, which is in the form of black powder and has a sheet structure similar to graphene, black phosphorus and other materials, so it also has special optical and electrochemical properties. But since TaS 2 The continuity of the energy band limits its wide application in the field of optoelectronics. Inspired by the quantum size effect and quantum confinement effect, the two-dimensional TaS 2 The preparation of zero-dimensional tantalum disulfide nanocrystals converts continuous ...
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IPC IPC(8): C01G35/00C09K11/67
CPCC01G35/00C01P2002/72C01P2004/04C09K11/671
Inventor 李学铭唐利斌周亮亮潘峰杨艳波鲁朝宇梁晶
Owner YUNNAN NORMAL UNIV
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