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Magnetron sputtering apparatus

A magnetron sputtering device and magnet technology, applied in sputtering coating, vacuum evaporation coating, coating, etc.

Inactive Publication Date: 2013-07-24
TOHOKU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] In addition, there are also sputtered particles attached to shielding parts such as shielding plates or grounding plates other than the substrate to be processed. After long-term operation, the adhesion film changes from The area where a large number of particles reach becomes thick and peels off, causing dust problems
If dust is generated, it is necessary to open the processing chamber to the atmosphere and replace the shielding member with a large amount of film attached, so efficient film formation operation cannot be performed.

Method used

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no. 1 Embodiment approach

[0097] A first embodiment of the present invention will be described with reference to the drawings.

[0098] figure 1 It is a sectional view explaining the structure of the 1st Embodiment of the magnetic rotation sputtering apparatus of this invention.

[0099] exist figure 1 Among them, 1 is a target, 2 is a cylindrical rotating shaft, 3 is a plurality of helical plate magnet groups arranged in a spiral shape on the surface of the rotating shaft 2, 4 is a fixed outer peripheral plate magnet arranged on the outer periphery, and 5 is a fixed outer peripheral plate magnet. The opposite side of the target of the magnet 4 is oppositely arranged on the outer peripheral permanent magnet on the fixed outer peripheral plate magnet 4, 6 is a packaging plate bonded to the target 1, and 15 is formed to cover the columnar rotating shaft 2 and the part other than the above-mentioned target side. The permanent magnet of the structure of the helical plate magnet group 3, 8 is the passag...

no. 2 Embodiment approach

[0120] Next, a second embodiment of the present invention will be described in detail with reference to the following drawings. Wherein, for convenience of description, parts overlapping with the above-mentioned embodiments are omitted. exist Figure 9 In the present embodiment shown, the slot width 20 and length of the slot 18 are set so that when the substrate to be processed is fixed and the helical plate magnet group is rotated at a certain frequency, no gap is blocked when the substrate to be processed is blocked. The area on the substrate that is less than 80% of the maximum film thickness formed per unit time. In this embodiment, the target material is pure aluminum. Below, combine Figure 10 for a more detailed explanation.

[0121] Figure 10 It is the film formation rate distribution in the direction perpendicular to the axis of the columnar rotation axis when the silicon substrate is installed at a position 30 mm away from the target surface. The above-mention...

no. 3 Embodiment approach

[0125] Next, a third embodiment of the present invention will be described in detail with reference to the following drawings. However, for the convenience of description, the description of the part overlapping with the above-mentioned embodiment is omitted. Rotary magnetron sputtering device of the present invention such as Figure 13 As shown, it is particularly suitable for use as a reciprocating film forming device.

[0126] exist Figure 13 Among them, 401 is a processing chamber, 402 is a gate valve, 403 is a substrate to be processed, and 404 is a rotating magnet plasma excitation part shown in the third embodiment. However, in the first embodiment, the axial length of the helical portion is 307 mm, but it is 270 mm in this example. The frequency of the plasma excitation power is 13.56 MHz. From the viewpoint of increasing the density of plasma and lowering the temperature of electrons, it is desirable to adopt a high frequency such as about 100 MHz, but the plasma...

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Abstract

In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus of this invention, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and a psubstrate to be processed is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

Description

technical field [0001] The present invention relates to a magnetron sputtering apparatus as a processing apparatus for performing predetermined surface treatment on a target object such as a liquid crystal display substrate or a semiconductor substrate. Background technique [0002] In the manufacture of semiconductor elements such as liquid crystal display elements and ICs, a thin film forming process of forming a thin film of metal or insulating material on the substrate is indispensable. In these steps, a film-forming method based on a sputtering device is used, that is, a raw material for thin film formation is used as a target, and argon gas or the like is ionized by direct current high voltage or high-frequency power, and the target is activated by the plasma gas. melted, dissolved and scattered, and attached to the substrate to be processed. [0003] In the sputtering film forming method, in order to increase the film forming speed, a magnet is placed behind the targ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35H01L21/285
CPCC23C14/35H01J37/32495H01J37/3405H01J37/3408H01J37/3441H01J37/345H01J37/3452H01J37/3455H01L21/285
Inventor 大见忠弘后藤哲也松冈孝明
Owner TOHOKU UNIV
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