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Important article keeping system, method and device

The invention relates to an important article keeping system, method and device, and the system comprises a cabinet which is provided with a control assembly. The control assembly comprises a touch control display, a voice play loudspeaker, a bar code recognizer, a fingerprint device, an RFID reader-writer, and an RFID multichannel reader-writer. The central part of the cabinet is provided with an electronic cabinet door. The electronic cabinet door is provided with a cabinet door handle. The lower part of the cabinet is provided with an emergency lock. The electronic cabinet door is provided with an electronic lock. An inner wall of the electronic cabinet door is provided with a file label. According to the invention, the system is used for the management of important articles based on the advantages of biological feature recognition, and carries out the strict multistage electronized management and control. The articles in the cabinet are independently packaged and labeled. The system automatically generates an electronic list of the stored articles, and the inventory status of the stored articles can be obtained at a management background at any time. The system can find a situation of unauthorized taking, achieves the IT management of the inventory status, speeds up the storing and taking time, and improves the storing and taking accuracy.
Owner:邢德智 +1

One-time programmable memory

In the present invention, one-time programmable memory includes a diode as an access device and a capacitor as a storage device, the diode includes four terminals, wherein the first terminal is connected to a word line, the second terminal is connected to one plate of the capacitor, the third terminal is floating, and the fourth terminal is connected to a bit line, and the capacitor includes two electrodes, wherein one of the capacitor plate serves as a storage node which is connected to the second terminal of the diode, and another plate of the capacitor is connected to a plate line, and the plate line is asserted to programming voltage which is higher than the regular supply voltage of the decoders and data latches, in order to breakdown the insulator of the capacitor when programming, but the plate line is connected to the regular supply voltage when read. And during read, the diode also serves as a sense amplifier to detect whether the storage node is forward bias or not, and it sends binary data to a latch device wherein includes a current mirror and a feedback loop, which cuts off the current path after latching. And dummy columns generate replica delay signals which guarantee timing margin and reduce cycle time. In addition, the memory cells are formed in between the routing layers, which memory cells can be stacked over the transistor or another capacitor memory cell.
Owner:KIM JUHAN

One-time programmable memory

In the present invention, one-time programmable memory includes a diode as an access device and a capacitor as a storage device, the diode includes four terminals, wherein the first terminal is connected to a word line, the second terminal is connected to one plate of the capacitor, the third terminal is floating, and the fourth terminal is connected to a bit line, and the capacitor includes two electrodes, wherein one of the capacitor plate serves as a storage node which is connected to the second terminal of the diode, and another plate of the capacitor is connected to a plate line, and the plate line is asserted to programming voltage which is higher than the regular supply voltage of the decoders and data latches, in order to breakdown the insulator of the capacitor when programming, but the plate line is connected to the regular supply voltage when read. And during read, the diode also serves as a sense amplifier to detect whether the storage node is forward bias or not, and it sends binary data to a latch device wherein includes a current mirror and a feedback loop, which cuts off the current path after latching. And dummy columns generate replica delay signals which guarantee timing margin and reduce cycle time. In addition, the memory cells are formed in between the routing layers, which memory cells can be stacked over the transistor or another capacitor memory cell.
Owner:KIM JUHAN
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