61 results about "Bipolar circuits" patented technology

The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance by providing reduced base resistence. The preferred design forms the extrinsic base by diffusing dopants from a dopant source layer and into the extrinsic base region. This diffusion of dopants forms at least a portion of the extrinsic base. In particular, the portion adjacent to the intrinsic base region is formed by diffusion. This solution avoids the problems caused by traditional solutions that implanted the extrinsic base. Specifically, by forming at least a portion of the extrinsic base by diffusion, the problem of damage to base region is minimized. This reduced damage enhances dopant diffusion into the intrinsic base. Additionally, the formed extrinsic base can have improved resistence, resulting in an improved maximum frequency for the bipolar device. Additionally, the extrinsic base can be formed with a self-aligned manufacturing process that reduces fabrication complexity.

SRAM cell includes a four-terminal diode as a read device wherein the first terminal is connected to a read word line, the second terminal is connected to a storage device through a resistor, the third terminal is floating, and the fourth terminal is connected to one of two bit lines; and two MOS transistors as a write device; and each MOS transistor is connected to the bit line respectively; and a latch including two cross-coupled inverters as the storage device; and the SRAM cell can be formed from thin-film layer, thus multiple memory cells are stacked; and the heavy routing lines are driven by the bipolar drivers which are part of the invention, hence the bipolar circuits and the control MOS transistors of the peripheral circuit can be formed from the deposited thin-film layers; consequently the whole chip can be stacked over the wafer, such as silicon, quartz and others; additionally it applications are extended to a multi port memory and a content addressable memory.

The invention provides a multi-layer compound passivation film structure of a Bipolar circuit, which comprises a bottom silicon oxide film layer and a silicon nitride film layer, wherein the silicon oxide film layer is deposited on the surface of a silicon substrate, and the silicon nitride film layer is deposited on the silicon oxide film layer; a certain proportion of phosphine is doped in the silicon oxide film layer; and the silicon oxide film layer sequentially comprises an undoped silicon oxide layer, a doped phosphorosilicate glass layer and an undoped silicon oxide layer. Meanwhile, the invention also provides a manufacturing process of the multi-layer compound passivation film of the Bipolar circuit. The multi-layer compound passivation film structure of the Bipolar circuit has scratch resistance, moisture resistance, high density, low film stress, higher impurity absorbing ability, better step covering ability and excellent photoelectric properties, electrical characteristics and heat stability, reduces the soft breakdown, and solves the problems of poor reliability, and the like.

A method in the fabrication of an integrated bipolar circuit comprises the steps of: providing a p-type substrate; forming in the substrate a buried n+-type region and an n-type region above the buried n+-type region; forming field isolation areas around the n-type region; forming a PMOS gate region on the n-type region; forming a diffused n+-type contact from the upper surface of the substrate to the buried n+-type region; the contact being separated from the n-type region; forming a p-type polysilicon source on the n-type region; forming a p-type source in the n-type region; forming a p-type drain in the n-type region; and connecting the PMOS transistor structure to operate as a PNP transistor, wherein the source is connected to the gate and constitutes an emitter of the PNP transistor; the drain constitutes a collector of the PNP transistor; and the n-type region constitutes a base of the PNP transistor.

A method in the fabrication of an integrated bipolar circuit for forming a p / n-junction varactor is disclosed. The method featuring the steps of providing a p-doped substrate (10; 10, 41); forming a buried n+-doped region (31) in the substrate; forming in the substrate an n-doped region (41) above the buried n+-doped region (31); forming field isolation (81) around the n-doped region (41); multiple ion implanting the n-doped region (41); forming a p+-doped region (151) on the n-doped region (41); forming an n+-doped contact region to the buried n+-doped region (31), the contact region being separated from the n-doped region (41); and heat treating the hereby obtained structure to set the doping profiles of the doped regions. The multiple ion implantation of the n-doped region (41); the formation of the p+-doped region (151); and the heat treatment are performed to obtain a hyper-abrupt p+ / n-junction within the n-doped region (41).

The invention discloses a capacitive type operation electrode circuit pad. The capacitive type operation electrode circuit pad disclosed by the invention is manufactured by taking polymer gel as an insulating medium and pouring the polymer gel on two surfaces of conductive fabric of a capacitance plate. In order to solve the condition that the capacitance plate and the insulating medium are in drum stratification, a plurality of rectangular array circular holes are machined in the capacitance plate as required in the capacitive type operation electrode circuit pad disclosed by the invention; the poured polymer gel is used for integrally connecting the gel on two surfaces of the capacitance plate via the circular holes in the capacitance plate; and the capacitance plate is fixed among gel layers, so that the insulating medium on two surfaces of the capacitance plate are not separated from the capacitance plate. A high-frequency electric knife has two circuit negative plate detecting modes; and in order to enable the capacitive type operation electrode circuit pad disclosed by the invention to be suitable for the two detecting modes, a group of RC (Resistor Capacitor) circuits are added between two circuit lead wires in the capacitive type operation electrode circuit pad disclosed by the invention, so that an effect after pasting one-time bipolar negative plate on a human body is imitated, the circuit pad can pass the detection of the bipolar circuit detecting mode of the electric knife and the normal use of the operation electrode circuit pad is guaranteed.

The invention discloses a power supply harmonic treatment device for a traction substation of an electrified railway. The device comprises a bipolar circuit breaker, a current transformer, a lightningarrester, a first capacitor, a second capacitor, a first electric reactor, a second electric reactor, a first resistor and a second resistor which are connected in sequence. The first capacitor, thesecond capacitor, the first reactor, the second reactor, the first resistor and the second resistor form a second-order passive filter. In this way, higher harmonics received by the contact network orthe positive feeder from the electric locomotive can be filtered by the second-order passive filter and do not enter the transformer in the substation any more, so that adverse permeation to a low-voltage power distribution system in the substation is avoided, and damage to low-voltage electric equipment in the substation is avoided.

The invention discloses a startup control circuit with an acousto-optic early warning function, wherein the secondary line power supply port A and the power supply port B are externally connected witha 220V alternating current power supply; The method is characterized by comprising the following steps; the control circuit further comprises bipolar circuit breakers QF1 and QF2, a stop button SB1,a start button SB2, an early warning intermediate relay KA1, an early warning time relay KT1, an audible and visual alarm HAB, an operation contactor KM, an early warning indicator lamp HD1, an operation indicator lamp HD2 and a thermal relay FR. The circuit is simple, easy and convenient to operate and reliable in operation, and safe production is guaranteed.

A power distribution board is provided. The internal device block (2) has a plurality of branch circuit breakers (20) inside the box body (1). The plurality of branch bars (23-26) have branch connection parts (32) and bolt insertion holes arranged along the input terminal (4) side of the internal device block (2). The trunk bars (27-30) have long holes (43) extending in the length direction of the branch bars (23-26). The connecting bolts (49) are inserted through the bolt insertion holes of the branch bars and the long holes (43) of the trunk bars. The nut eccentrically engages the threaded portion threadedly engaged with the front end of the connecting bolt (49) from the center in the length direction of the branch bar. The insulating part (52) has a receiving recess for reversibly receiving the nut (56). In this way, regardless of whether a single-pole type branch circuit breaker or a double-pole type branch circuit breaker is installed, it is not necessary to replace the branch bar, and it can be easily dealt with.

The invention discloses a bipolar gauss single recurrent pulse generating circuit and method based on a CMOS. The bipolar gauss single recurrent pulse generating circuit based on the CMOS includes a narrow pulse generating unit, a clock signal polarity reversing unit, a direct-current level eliminating unit, a synchronization unit, a synthesis unit and a filter shaping unit. In the invention, influences of waveform converting and processing on base band data accuracy are avoided effectively; a bipolar gauss single recurrent pulse generator adopted by the invention can be realized by the integrated circuit CMOS technology, is suitable for integrating in an SOC chip and is high in promotion value; not only are the complexity and implementation difficulty of the bipolar gauss single recurrent pulse generating circuit lowered, but also the power consumption is lowered and the area of the chip is decreased, and the strict requirements for volume, power consumption, long term sustainable work and the like of embedded equipment with lower complex rate and higher reliability are met and the bipolar gauss single recurrent pulse generating circuit and method based on the CMOS can be widely used in the field of bio-medical treatment.