61 results about "Bipolar circuits" patented technology

An electrosurgical device includes a plurality of electrodes for forming a plurality of bipolar circuits usable for affecting a patient's tissue during a surgical operation. At least one of said electrodes is operable as an active electrode in one of said bipolar circuits and as a return electrode in another one of said bipolar circuits.

The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance by providing reduced base resistence. The preferred design forms the extrinsic base by diffusing dopants from a dopant source layer and into the extrinsic base region. This diffusion of dopants forms at least a portion of the extrinsic base. In particular, the portion adjacent to the intrinsic base region is formed by diffusion. This solution avoids the problems caused by traditional solutions that implanted the extrinsic base. Specifically, by forming at least a portion of the extrinsic base by diffusion, the problem of damage to base region is minimized. This reduced damage enhances dopant diffusion into the intrinsic base. Additionally, the formed extrinsic base can have improved resistence, resulting in an improved maximum frequency for the bipolar device. Additionally, the extrinsic base can be formed with a self-aligned manufacturing process that reduces fabrication complexity.

An arc fault circuit breaker includes a housing and two poles therein. Each of the poles includes separable contacts, an operating mechanism structured to open and close the separable contacts, and a thermal / magnetic trip mechanism cooperating with the operating mechanism to trip open the separable contacts. An arc fault trip circuit cooperates with the operating mechanisms to trip open the separable contacts of the two poles whenever an arc fault is detected by the arc fault trip circuit. A shunt is electrically connected in series with a line conductor and a series RC circuit couples a current signal from the shunt to an arc fault trip mechanism. Alternatively, first and second shunts are electrically connected in series with first and second load neutral conductors, and first and second series RC circuits couple first and second current signals from the first and second shunts, respectively, to the arc fault trip mechanism.

A method in the fabrication of an integrated bipolar circuit comprises the steps of: providing a p-type substrate; forming in the substrate a buried n+-type region and an n-type region above the buried n+-type region; forming field isolation areas around the n-type region; forming a PMOS gate region on the n-type region; forming a diffused n+-type contact from the upper surface of the substrate to the buried n+-type region; the contact being separated from the n-type region; forming a p-type polysilicon source on the n-type region; forming a p-type source in the n-type region; forming a p-type drain in the n-type region; and connecting the PMOS transistor structure to operate as a PNP transistor, wherein the source is connected to the gate and constitutes an emitter of the PNP transistor; the drain constitutes a collector of the PNP transistor; and the n-type region constitutes a base of the PNP transistor.

SRAM cell includes a four-terminal diode as a read device wherein the first terminal is connected to a read word line, the second terminal is connected to a storage device through a resistor, the third terminal is floating, and the fourth terminal is connected to one of two bit lines; and two MOS transistors as a write device; and each MOS transistor is connected to the bit line respectively; and a latch including two cross-coupled inverters as the storage device; and the SRAM cell can be formed from thin-film layer, thus multiple memory cells are stacked; and the heavy routing lines are driven by the bipolar drivers which are part of the invention, hence the bipolar circuits and the control MOS transistors of the peripheral circuit can be formed from the deposited thin-film layers; consequently the whole chip can be stacked over the wafer, such as silicon, quartz and others; additionally it applications are extended to a multi port memory and a content addressable memory.

The invention provides a multi-layer compound passivation film structure of a Bipolar circuit, which comprises a bottom silicon oxide film layer and a silicon nitride film layer, wherein the silicon oxide film layer is deposited on the surface of a silicon substrate, and the silicon nitride film layer is deposited on the silicon oxide film layer; a certain proportion of phosphine is doped in the silicon oxide film layer; and the silicon oxide film layer sequentially comprises an undoped silicon oxide layer, a doped phosphorosilicate glass layer and an undoped silicon oxide layer. Meanwhile, the invention also provides a manufacturing process of the multi-layer compound passivation film of the Bipolar circuit. The multi-layer compound passivation film structure of the Bipolar circuit has scratch resistance, moisture resistance, high density, low film stress, higher impurity absorbing ability, better step covering ability and excellent photoelectric properties, electrical characteristics and heat stability, reduces the soft breakdown, and solves the problems of poor reliability, and the like.

A method in the fabrication of an integrated bipolar circuit comprises the steps of: providing a p-type substrate; forming in the substrate a buried n+-type region and an n-type region above the buried n+-type region; forming field isolation areas around the n-type region; forming a PMOS gate region on the n-type region; forming a diffused n+-type contact from the upper surface of the substrate to the buried n+-type region; the contact being separated from the n-type region; forming a p-type polysilicon source on the n-type region; forming a p-type source in the n-type region; forming a p-type drain in the n-type region; and connecting the PMOS transistor structure to operate as a PNP transistor, wherein the source is connected to the gate and constitutes an emitter of the PNP transistor; the drain constitutes a collector of the PNP transistor; and the n-type region constitutes a base of the PNP transistor.

Systems, devices, and methods for electrosurgery wherein a circuit bridge is created for a monopolar electrosurgical circuit that provides a matched impedance to load condition thereby joining the active (working) and return (reference) electrode leads into a single bipolar mode device.

A method in the fabrication of an integrated bipolar circuit for forming a p / n-junction varactor is disclosed. The method featuring the steps of providing a p-doped substrate (10; 10, 41); forming a buried n+-doped region (31) in the substrate; forming in the substrate an n-doped region (41) above the buried n+-doped region (31); forming field isolation (81) around the n-doped region (41); multiple ion implanting the n-doped region (41); forming a p+-doped region (151) on the n-doped region (41); forming an n+-doped contact region to the buried n+-doped region (31), the contact region being separated from the n-doped region (41); and heat treating the hereby obtained structure to set the doping profiles of the doped regions. The multiple ion implantation of the n-doped region (41); the formation of the p+-doped region (151); and the heat treatment are performed to obtain a hyper-abrupt p+ / n-junction within the n-doped region (41).

A power system is for a facility. The power system includes a load panel powered from a split phase electrical distribution configuration having a first line, a second line and a neutral. A two-pole circuit interrupter in the load panel receives power from the first line, the second line and the neutral, and protects an unbalanced load. The two-pole circuit interrupter is structured to trip open or open responsive to an input. A circuit in the load panel is structured to determine that the neutral is broken or missing and responsively output to the input to cause the two-pole circuit interrupter to trip open or open.

The invention relates to a method for producing contact hole in dual-polar circuit of integrated circuit. Wherein, it comprises that (1), forming oxidize layer on the substrate with polar area; (2), light etching to form pattern; (3) etching at dry method and wet method to corrode to form contact hole; (4) depositing metal in the contact hole to form connecting line; between the steps (1) and (2), before light etching, using plasma to hit the surface of silica dioxide. The invention can avoid dry etching device, only process the oxidize layer with plasma, to improve the shape of contact hole, to reduce cost and save resource.

The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance by providing reduced base resistence. The preferred design forms the extrinsic base by diffusing dopants from a dopant source layer and into the extrinsic base region. This diffusion of dopants forms at least a portion of the extrinsic base. In particular, the portion adjacent to the intrinsic base region is formed by diffusion. This solution avoids the problems caused by traditional solutions that implanted the extrinsic base. Specifically, by forming at least a portion of the extrinsic base by diffusion, the problem of damage to base region is minimized. This reduced damage enhances dopant diffusion into the intrinsic base. Additionally, the formed extrinsic base can have improved resistence, resulting in an improved maximum frequency for the bipolar device. Additionally, the extrinsic base can be formed with a self-aligned manufacturing process that reduces fabrication complexity.

A manufacturing method of a fairlead structure for a Bipolar circuit comprises the following steps of: (1) forming a bottom silicon oxide thin film layer on a silicon substrate provided with a pole zone; (2) forming a top silicon oxide thin film layer on the bottom silicon oxide thin film layer by deposition; (3) depositing a silicon nitride thin film layer on the top silicon oxide thin film layer; (4) and conducting photoetching and etching on a pre-etched zone of the silicon nitride thin layer to form a fairlead. Based on the 1.5mum technique platform equipment set, the method of the invention manufactures a fairlead structure for a Bipolar circuit, which satisfies 1.0mum to 1.2mum technique platform, and effectively solves the step metal cover problem of the fairlead when the technique platform is close to sub-micron level.

The invention discloses a capacitive type operation electrode circuit pad. The capacitive type operation electrode circuit pad disclosed by the invention is manufactured by taking polymer gel as an insulating medium and pouring the polymer gel on two surfaces of conductive fabric of a capacitance plate. In order to solve the condition that the capacitance plate and the insulating medium are in drum stratification, a plurality of rectangular array circular holes are machined in the capacitance plate as required in the capacitive type operation electrode circuit pad disclosed by the invention; the poured polymer gel is used for integrally connecting the gel on two surfaces of the capacitance plate via the circular holes in the capacitance plate; and the capacitance plate is fixed among gel layers, so that the insulating medium on two surfaces of the capacitance plate are not separated from the capacitance plate. A high-frequency electric knife has two circuit negative plate detecting modes; and in order to enable the capacitive type operation electrode circuit pad disclosed by the invention to be suitable for the two detecting modes, a group of RC (Resistor Capacitor) circuits are added between two circuit lead wires in the capacitive type operation electrode circuit pad disclosed by the invention, so that an effect after pasting one-time bipolar negative plate on a human body is imitated, the circuit pad can pass the detection of the bipolar circuit detecting mode of the electric knife and the normal use of the operation electrode circuit pad is guaranteed.

The invention relates to the technology of radiation resisting of bipolar devices, in particular to a radiation resistant bipolar device and a manufacturing method of the radiation resistant bipolar device. The radiation resistant bipolar device and the manufacturing method of the radiation resistant bipolar device aim to solve the problem that an existing the radiation resisting capacity of an existing bipolar device is poor. A high-dosage-concentration region with an emitting region with a center is arranged on the surface of a base region of the bipolar device. The manufacturing method of the radiation resistant bipolar device comprises the steps that after the diffusion or ion injection of the base region is completed and before the diffusion or ion injection of the emitting region is carried out, a radiation resistant strengthening method is carried out; according to the radiation resistant strengthening method, a base region surface doping mask plate is manufactured based on a base region mask plate, foreign ions the same as those in the base region are injected into the surface of the base region based on the mask plate, the injection concentration is 10-10,000 times of the region concentration, and finally annealing treatment is carried out. The surface structure and the doping concentration of the base region are changed, and the failure threshold of the device is improved by 1.4-3.7 times. The device and the manufacturing method are suitable for NPN devices, PNP devices, digital bipolar circuits, simulated bipolar circuits and DA / AD circuits.

Belonging to technical area of IC circuit design and signal process, being structure same as to CMOS or Bipolar logarithmic amplifier, the amplifier possesses circuit is composed of feed back circuit of DC level, single end-difference conversion circuit, current adder circuit, current-voltage conversion circuit, and cascaded module of five pieces of single staged clipping detection unit. Characters are that the said single staged clipping detection unit is combined from Bipolar circuit and CMOS circuit. Features are simple structure, good linearity, low power consumption, less area used by chip, and adjustable RSSI dynamic range.

A bipolar circuit breaker with a display function disclosed by the present invention comprises a circuit breaker shell, a first execution mechanism and a second execution mechanism are arranged at thetwo sides of the circuit breaker shell respectively, and the first execution mechanism and the second execution mechanism are both equipped with the moving contacts. One side of the first executing mechanism and one side of the second executing mechanism are connected with an electric leakage electromagnetic system and a short-circuit electromagnetic system respectively, and the other side of thefirst execution mechanism and the other side of the second execution mechanism are both connected with handles. The first execution mechanism is connected with the electric leakage electromagnetic system through an electric leakage display mechanism, and the electric leakage display mechanism comprises an indication accessory. A first linkage part is arranged between the indication accessory andthe first execution mechanism, an indication piece is connected to the inner side of each handle, and one side of the indication piece is connected with the indication accessory through a second linkage part. According to the present invention, the electric leakage display effect can be achieved when the circuit breaker is switched off due to electric leakage, and the bipolar circuit breaker has the advantages that the circuit board is good in power-off stability, and the circuit breaker is convenient to install.

A method in the fabrication of an integrated bipolar circuit for forming a p / n-junction varactor is disclosed. The method featuring the steps of providing a p-doped substrate (10; 10, 41); forming a buried n<+>-doped region (31) in the substrate; forming in the substrate an n-doped region (41) above the buried n<+>-doped region (31); forming field isolation (81) around the n-doped region (41); multiple ion implanting the n-doped region (41); forming a p<+>-doped region (151) on the n-doped region (41); forming an n<+>-doped contact region to the buried n<+>-doped region (31), the contact region being separated from the n-doped region (41); and heat treating the hereby obtained structure to set the doping profiles of the doped regions. The multiple ion implantation of the n-doped region (41); the formation of the p<+>-doped region (151); and the heat treatment are performed to obtain a hyper-abrupt p<+> / n-junction within the n-doped region (41).

Disclosed is a biasing circuit. The biasing circuit comprises a positive temperature coefficient bias current generating circuit, a negative temperature coefficient bias current generating circuit, aconstant temperature voltage generating circuit and a constant temperature current generating current, wherein the positive temperature coefficient bias current generating circuit is used for generating a biasing current IB1 with a positive temperature coefficient; the negative temperature coefficient bias current generating circuit is used for generating a biasing current IB2 with a negative temperature coefficient; the constant temperature voltage generating current is used for generating a constant temperature voltage Vref related to the positive temperature coefficient biasing current IB1and the negative temperature coefficient biasing current IB2; and the constant temperature current generating current is used for generating a constant temperature current Iref related to the positivetemperature coefficient biasing current IB1 and the negative temperature coefficient biasing current IB2. By virtue of the biasing circuit, a voltage source and a current source can be generated at the same time, and the biasing circuit has the advantage of a small area as a CMOS biasing circuit as well as high PSRR and low low-temperature drift characteristics as a traditional Bipolar circuit.

The invention relates to a circuit breaker used for providing overload and short-circuit protection for electric circuits and electrical appliances, in particular relating to a bipolar circuit breaker. The technical scheme provided by the invention is as follows: the bipolar circuit breaker is characterized in that a tripping mechanism comprises a rotating wheel, a tripping frame, a sudden jump frame, a rotating shaft of the sudden jump frame, a spring of the tripping frame, a position-limiting rotating shaft, a tripping plate and a torsion spring, wherein a tension spring is arranged in the rotating wheel and a housing of the tripping mechanism, convex columns are arranged on two sides of the rotating wheel, moving contacts are sheathed on the convex columns, one end of the torsion spring is clamped on the moving contact, and the other end of the torsion spring is clamped on the rotating wheel. By adopting the scheme, the invention provides the novel bipolar circuit breaker which is simple in structure and can enable the pressure between contact points to meet the requirements of the circuit breaker in circuit environments with different current intensities; and furthermore, the tripping force of the tripping mechanism does not change, the sensitivity of the circuit breaker is not affected, and the universality is wide.

The invention relates to an improved method of a bipolar integrated circuit amplification coefficient process, comprising a step of manufacturing a basic circuit of a bipolar integrated circuit compatible with a BJT (Bipolar Junction Transistor) and a JFET (Junction Field-Effect Transistor) by a conventional process, a step of manufacturing an electrode lead wire on the basic circuit and a step of carrying out follow-up process arrangement. The improved method is characterized in that the step of manufacturing the electrode lead wire on the basic circuit comprises the steps of: 1, primary photoetching and corrosion on a contact hole; 2, hole oxidization; 3, silicon nitride deposition; 4, secondary photoetching and hole secondary corrosion on the contact hole; 5, pure aluminum sputtering; and 6, formation of the electrode lead wire (25) and a press welding point by the photoetching and the corrosion. The improved method disclosed by the invention has the following advantages that (1) the stress of a silicon nitride dielectric film is effectively released so as to be matched with the property of bipolar circuits; (2) the attenuation of a PNP pipe amplification coefficient is effectively prevented and the PNP pipe amplification coefficient is stabilized; and (3) a technological approach is easy to realize.

The invention provides a bipolar circuit manufacture method. The bipolar circuit manufacture method includes: depositing a first dielectric layer on a provided semiconductor substrate, and forming doped deep phosphorus, a first-type doped region, a second-type doped region and upper isolation in an epitaxial layer of the semiconductor substrate; combining a contact hole pattern and a capacitive window pattern on a same mask for etching, forming contact holes in the first dielectric layer formed at each level, and forming a required capacitive window in the first dielectric layer on the second-type doped region; and growing a silicon dioxide layer, removing the silicon dioxide layer in part of the selected capacitive window and removing part of the deposited silicon nitride layer to keep the silicon nitride layer in the required capacitive window so as to form different capacitance. The bipolar circuit manufacture method is capable of shortening production time of an annealing process in an emitter region, meets the requirements of high and low voltage modules in a special circuit on capacitance value and capacitive withstood voltage and weakens influences of the emitter region and contact hole photoetching alignment precision on products.

The invention discloses a power supply harmonic treatment device for a traction substation of an electrified railway. The device comprises a bipolar circuit breaker, a current transformer, a lightningarrester, a first capacitor, a second capacitor, a first electric reactor, a second electric reactor, a first resistor and a second resistor which are connected in sequence. The first capacitor, thesecond capacitor, the first reactor, the second reactor, the first resistor and the second resistor form a second-order passive filter. In this way, higher harmonics received by the contact network orthe positive feeder from the electric locomotive can be filtered by the second-order passive filter and do not enter the transformer in the substation any more, so that adverse permeation to a low-voltage power distribution system in the substation is avoided, and damage to low-voltage electric equipment in the substation is avoided.

A circuit breaker mechanism comprises a knob, a pendulum rod arranged on the knob, a transmission frame driven by the pendulum rod, a rotating frame for driving tripping of the pendulum rod from the transmission frame, and two tripping components for driving the rotating frame respectively, wherein the rotating frame is hinged on the transmission frame; a first tripping convex block and a second tripping convex block are arranged on the two sides of the rotating frame respectively; the tripping components are positioned on the two sides of the rotating frame; pushing parts are arranged on the tripping components; the pushing part on the tripping component on one side drives the first tripping convex block; and the pushing part on the tripping component on the other side drives the second tripping convex block. The circuit breaker mechanism has the advantages of simple structure, few components and sensitive actions; the two tripping components drive the rotating frame respectively, so that the application range of the circuit breaker mechanism is expanded; and sliding pushing parts of a sliding pressure transmission frame are arranged on the tripping components, so that a forcible disconnecting function is enhanced and the performance of a switching disconnecting action is stabilized.

The invention discloses a power supply abnormity alarming device of a double-circuit power supply system. The power supply abnormity alarming device comprises a first alarming control circuit and a second alarming control circuit. The first alarming control circuit comprises a first bipolar circuit breaker, a first relay, a second relay, a first alarm lamp, a second buzzer and a second resetting button. The second alarm control circuit comprises a second bipolar circuit breaker, a third relay, a fourth relay, a second alarm lamp, a first buzzer and a first resetting button. The inlet of the first bipolar circuit breaker and the inlet of the second bipolar circuit breaker are correspondingly connected with the double-circuit power supply system. The power supply condition of the power supply system is determined through the relays. When power supply abnormity occurs, the contacts of the relays and the buzzers perform alarming. Because the alarm device can be independently mounted in a random area, maintenance personnel can be reminded of eliminating the fault and reducing loss in time.

The invention discloses a startup control circuit with an acousto-optic early warning function, wherein the secondary line power supply port A and the power supply port B are externally connected witha 220V alternating current power supply; The method is characterized by comprising the following steps; the control circuit further comprises bipolar circuit breakers QF1 and QF2, a stop button SB1,a start button SB2, an early warning intermediate relay KA1, an early warning time relay KT1, an audible and visual alarm HAB, an operation contactor KM, an early warning indicator lamp HD1, an operation indicator lamp HD2 and a thermal relay FR. The circuit is simple, easy and convenient to operate and reliable in operation, and safe production is guaranteed.

This invention discloses a low voltage high speed TTL, a NOT-gate circuit and a method for increasing operation speed with 1.5V working voltage. The circuit includes a logic stage and an output level, the output level is a Q2 triode inverter. The logic part is composed of multiple-tube Q1, an emitter follower Q3 and a floating bleeder tube Q4, the logic level uses feedback tracing and floating bleeder circuit, characterizing that the emitter input signal of Q1 is sent to Q3 base from Q1 based on base-base coupled way to realize up and down at nearly the same speed for the internal points, Q4 provides low-resistance bleeding channel to speed up Q2 block, Q4 reduces its emit flow to zero quickly to block the channel from Q1 to Q2 and reduce Q1 basic flow to increase Q3 to a large emit flow and speed up conduction of Q2.

A power distribution board is provided. The internal device block (2) has a plurality of branch circuit breakers (20) inside the box body (1). The plurality of branch bars (23-26) have branch connection parts (32) and bolt insertion holes arranged along the input terminal (4) side of the internal device block (2). The trunk bars (27-30) have long holes (43) extending in the length direction of the branch bars (23-26). The connecting bolts (49) are inserted through the bolt insertion holes of the branch bars and the long holes (43) of the trunk bars. The nut eccentrically engages the threaded portion threadedly engaged with the front end of the connecting bolt (49) from the center in the length direction of the branch bar. The insulating part (52) has a receiving recess for reversibly receiving the nut (56). In this way, regardless of whether a single-pole type branch circuit breaker or a double-pole type branch circuit breaker is installed, it is not necessary to replace the branch bar, and it can be easily dealt with.

The invention discloses a single-button forward and reverse rotation automatic stop control circuit. The circuit comprises a secondary line power supply port A and a power supply port B which are externally connected with a 220V alternating current power supply, a forward contactor KM1, a reverse contactor KM2, a forward intermediate relay KA1, a reverse intermediate relay KA2, a reversing intermediate relay KA3, a thermal relay FR, a forward time relay KT1, a reverse time relay KT2, bipolar circuit breakers QF1 and QF2, a button SB, a forward indicator lamp HD1 and a reverse indicator lamp HD2. The circuit is simple, easy and convenient to operate and reliable in operation, multiple protection is achieved, mechanical accidents and short-circuit accidents of a power supply cannot be causedby mistakenly pressing a positive and negative rotation button, and therefore normal operation of equipment is guaranteed.

The invention discloses a bipolar gauss single recurrent pulse generating circuit and method based on a CMOS. The bipolar gauss single recurrent pulse generating circuit based on the CMOS includes a narrow pulse generating unit, a clock signal polarity reversing unit, a direct-current level eliminating unit, a synchronization unit, a synthesis unit and a filter shaping unit. In the invention, influences of waveform converting and processing on base band data accuracy are avoided effectively; a bipolar gauss single recurrent pulse generator adopted by the invention can be realized by the integrated circuit CMOS technology, is suitable for integrating in an SOC chip and is high in promotion value; not only are the complexity and implementation difficulty of the bipolar gauss single recurrent pulse generating circuit lowered, but also the power consumption is lowered and the area of the chip is decreased, and the strict requirements for volume, power consumption, long term sustainable work and the like of embedded equipment with lower complex rate and higher reliability are met and the bipolar gauss single recurrent pulse generating circuit and method based on the CMOS can be widely used in the field of bio-medical treatment.