Method for enhancing dynamic range of quantum dot resonance tunneling diode photodetector

A technology of resonant tunneling and optical detectors, which is applied in the field of visible light and short-wave infrared detectors, and can solve the problem of small dynamic range of detectors

Inactive Publication Date: 2008-12-31
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

This effect makes the quantum dot resonant tunneling diode only sensitive to few photons under the same bias voltag...

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  • Method for enhancing dynamic range of quantum dot resonance tunneling diode photodetector
  • Method for enhancing dynamic range of quantum dot resonance tunneling diode photodetector
  • Method for enhancing dynamic range of quantum dot resonance tunneling diode photodetector

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Embodiment Construction

[0028] The working mode of the device will be further described below in conjunction with the accompanying drawings and implementation examples.

[0029] The field effect enhanced quantum dot resonant tunneling diode structure of this example is as Figure 1 As shown, the thickness of the GaAs buffer layer 2 is 400nm, the thickness of the AlAs corrosion barrier layer 3 is 15nm, and the n + The GaAs lower electrode layer 4 has a thickness of 430nm and a concentration of 10 18 m-3 fade to 10 16 cm -3 , the thickness of the first GaAs spacer layer 5 is 20nm, the double barrier structure layer 6 is composed of AlAs potential barrier 6-1 and GaAs potential well 6-2, and the thickness of the AlAs potential barrier layer is 3nm, the thickness of the GaAs potential well is 8nm, the second GaAs spacer layer 7 thickness 2nm, InAs quantum dots 8 density of 10 11 cm -2 , intrinsic GaAs quantum dot covering layer 9 thickness 10nm, third GaAs spacer layer 10 thickness 150nm, n + The Ga...

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Abstract

The invention discloses a method for increasing the dynamic range of a quantum dot resonance tunneling diode photodetector, and the hardcore of the structure thereof comprises a GaAs or InGaAs incident photon absorption layer, InAs self-assembly quantum dots with order of magnitude being 10<10>cm<-2> to 10<11>cm<-2> and an AlGaAs/GaAs double-potential-barrier structure layer; the core of the technology thereof is improved to extend the annealing time of the technique of the crisscross bridge resonance tunneling diode device so as to lead ohmic contact to diffuse to the double-potential-barrier structure layer; the core inventive point of the detecting approach thereof is that a longitudinal current branch of an original tunneling diode which is sensitive to small photons is kept, simultaneously, another transverse current which consists of two-dimensional electron gas is educed from a quantum well and can reflect the continuous variation of incident light intensity when suffering intensive modulation from a quantum dot electric field. The device of the invention has the advantages that the improvement of both the structure and the technology of the device can be compatible with the original equipment while the multiphoton detection sensitivity is greatly improved compared with the original device.

Description

technical field [0001] The present invention relates to visible light and short-wave infrared detector technology, specifically a method for improving the dynamic range of quantum dot resonant tunneling diode photodetectors, which is used to manufacture visible or short-wave infrared incident light that detects strong dynamic ranges of continuously changing light , Field effect enhanced quantum dot resonant tunneling diode device. Background technique [0002] Quantum dot resonant tunneling diode (QDRTD) is a highly sensitive visible and near-infrared photon detection device developed abroad in 2005. Its structure is mainly to bury a layer of quantum dots (QD) in front of the resonant tunneling double potential barrier to form a quantum dot resonant tunneling diode structure. Since the resonant tunneling current is extremely sensitive to the alignment of the emitter Fermi level and the quantum well energy level, a slight change in the double barrier potential will lead to a...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/11
CPCY02P70/50
Inventor 陆卫王旺平李宁甄红楼陈平平李天信张波李志锋陈效双
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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