A surface plasmon electro-excitation and electrical modulation integrated device comprises a back electrode, a semiconductor substrate, a semiconductor active structure, a first dielectric layer, a metal electrode and waveguide structure, a directional coupling structure, a second dielectric layer, a graphene structure, and a graphene metal electrode and waveguide structure. By electrically injecting a semiconductor quantum well material, the surface plasmons on metal and semiconductor medium interfaces are excited by means of near-field coupling and are propagated on a metal-medium waveguide after directional coupled output, and thus, surface plasmon electro-excitation is realized. Based on the fact that the Fermi level and dielectric constant change when the concentration of graphene carriers changes with change of gate voltage applied, the transmission bandwidth and high speed of electro-excited surface plasmons are modulated through the voltage applied to graphene in a field effect transistor-resembling structure composed of metal electrodes, a second dielectric layer and graphene.