9 results about "Semiconductor quantum wells" patented technology

The invention discloses a quantum well width prediction method, device, equipment and product of a semiconductor quantum well, and relates to the technical field of semiconductors. The quantum well width prediction method of the semiconductor quantum well comprises the following steps: sorting energy levels in a to-be-realized target energy level sequence according to energy values to obtain a sorted target energy level sequence; extracting energy level features of the sorted target energy level sequence to obtain target energy level features; and taking the target energy level feature as the input of a pre-trained quantum well width prediction model for operation to obtain a predicted quantum well width corresponding to the target energy level sequence. According to the quantum well width prediction method, device, equipment and product of the semiconductor quantum well, rapid and automatic direct solution from the target energy level sequence to the quantum well width can be achieved, and the problem that a traditional quantum well width design method is low in efficiency is solved.

The present invention proposes a semiconductor light-emitting element with a carrier leakage suppression layer, comprising a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor, arranged sequentially from bottom to top. A first carrier leakage suppression layer and a second carrier leakage suppression layer are disposed between the p-type semiconductor and the quantum well, with the first carrier leakage suppression layer positioned below the second carrier leakage suppression layer. Both the first carrier leakage suppression layer and the second carrier leakage suppression layer have electron effective mass distribution characteristics and dielectric constant distribution characteristics. The present invention regulates the interface variation angle and interface uniformity of the electron effective mass and dielectric constant at the interface between the first carrier leakage suppression layer and the quantum well, as well as at the interface between the second carrier leakage suppression layer and the first carrier leakage suppression layer and the p-type semiconductor, thereby modulating the interface energy band and interface band order at multiple interfaces, thereby raising the electron overflow barrier and reducing the probability of electron overflow into the p-type semiconductor.

The present invention relates to the field of semiconductor optoelectronic device technology, and specifically discloses a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer comprises, from bottom to top, a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor, and is characterized in that a two-dimensional hole injection layer and an electron blocking layer are provided between the p-type semiconductor and the quantum well. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer reduces the hole injection barrier at the interface between the two-dimensional hole injection layer and the quantum well, and increases the electron overflow barrier at the interface between the two-dimensional hole injection layer and the electron blocking layer, thereby improving the efficiency of hole injection into the quantum well and the photoelectric conversion efficiency (WPE) of the semiconductor light-emitting element.

This invention relates to the field of semiconductor optoelectronic device technology, specifically disclosing an epitaxial structure for a group III nitride semiconductor light-emitting element. The epitaxial structure of this group III nitride semiconductor light-emitting element, from bottom to top, includes a substrate, an n-type semiconductor, a quantum well, a p-type semiconductor, and a high electron mobility contact layer above the p-type semiconductor. The peak position of the high electron mobility contact layer has a decreasing angle φ towards the quantum well, the valley position of the peak velocity electric field of the high electron mobility contact layer has an increasing angle β towards the quantum well, the valley position of the hole mobility of the high electron mobility contact layer has an increasing angle γ towards the quantum well, and the valley position of the longitudinal sound velocity of the high electron mobility contact layer has an increasing angle θ towards the quantum well. This epitaxial structure of the group III nitride semiconductor light-emitting element can improve hole migration efficiency and injection efficiency, and reduce voltage variation under aging conditions.

This invention proposes a nitride semiconductor light-emitting diode (LED), comprising, from bottom to top, a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor. The quantum well is a periodic structure composed of a well layer and a barrier layer. A p-type contact layer is disposed above the p-type semiconductor. The p-type contact layer exhibits saturated electron drift velocity distribution characteristics, effective light hole mass distribution characteristics, deformation potential distribution characteristics, and polarized optical phonon energy distribution characteristics. This invention can enhance hole transport and conduction in the p-type contact layer, improve the lateral and longitudinal expansion capabilities of holes in the p-type contact layer, and improve the surge capability and human body mode electrostatic discharge (HBD) immunity of the LED. The HBD immunity is improved from a pass rate of over 90% for 100–200V to over 90% for 200–500V.

The utility model discloses an inter-band and inter-sub-band hybrid TM electric absorption modulator, which comprises a quantum well structure. The quantum well structure comprises at least one quantum well and at least one barrier; the quantum well is provided with a conduction band bottom energy level and at least one conduction band high-order energy level; the conduction band high-order energy level and the conduction band bottom energy level have the same energy difference as the designed absorbed photons. On the basis of conventional inter-band absorption, the width of the quantum well and the height of the barrier are ingeniously designed and adjusted, a plurality of conduction band energy levels are increased, modulatable sub-band absorption with the same absorption energy as that of inter-band absorption is achieved, the quantum efficiency upper limit of the electro-absorber can be increased, and the quantum efficiency of the electro-absorber can be improved. The utility model provides that inter-band and inter-band absorption is simultaneously used in a semiconductor quantum well to realize electro-absorption modulation on the same operating wavelength for the first time in the industry and academic circles, and has extremely high requirements on accurate calculation and design of an energy band.

The application provides a semiconductor quantum well structure for inhibiting carrier lateral diffusion and a preparation method. The structure comprises a lower barrier layer, a quantum well layer, a nucleation structure and an upper barrier layer which are sequentially stacked. The nucleation structure is island-shaped and / or groove-shaped, and the nucleation structure does not completely cover the quantum well layer. The band gap width of the nucleation structure is not equal to the band gap width of the upper barrier layer. The application can reduce the lateral diffusion of carriers in the quantum well, thereby reducing the non-radiative recombination of carriers in the dislocation area of the quantum well structure and improving the light emitting performance of the quantum well structure. The tolerance of a laser using the quantum well structure as an active region to dislocations will be obviously improved, especially for a Ⅲ-Ⅴ semiconductor quantum well laser grown by heteroepitaxy on a silicon substrate. The application is feasible, provides a new scheme for the growth of a semiconductor quantum well structure, and will promote the application of a corresponding semiconductor quantum well laser in a silicon-based optoelectronic integrated chip.

This disclosure provides a semiconductor quantum well, its fabrication method, and a quantum well device. The semiconductor quantum well includes a substrate, a lower barrier layer, a well layer, and an upper barrier layer. The lower barrier layer is located on the substrate. The well layer is located on the lower barrier layer. The upper barrier layer is located on the well layer. The barrier height between the upper barrier layer and the well layer is greater than the barrier height between the lower barrier layer and the well layer.

The present invention includes a receiving unit that includes a first solid-state device having a semiconductor quantum well structure, and receives multiple electron spin waves, a modulation unit that includes a second solid-state device having a semiconductor quantum well structure and connected to the receiving unit, and generates a multiplexed electron spin wave by synthesizing the electron spin waves from the receiving unit, and a separation unit that includes a third solid-state device having a semiconductor quantum well structure and connected to the modulation unit, receives the multiplexed electron spin wave synthesized in the modulation unit, and separates the multiple electron spin waves from the multiplexed electron spin wave. The modulation unit is a modulation unit that has a function of superposing the multiple electron spin waves by controlling an amplitude, a phase, and a polarization degree of freedom of the electron spin waves utilizing a persistent spin helix state in crystal orientation dependence of an effective magnetic field due to a spin-orbit interaction generated in a semiconductor quantum well structure.