4 results about "Semiconductor quantum wells" patented technology

The invention discloses a quantum well width prediction method, device, equipment and product of a semiconductor quantum well, and relates to the technical field of semiconductors. The quantum well width prediction method of the semiconductor quantum well comprises the following steps: sorting energy levels in a to-be-realized target energy level sequence according to energy values to obtain a sorted target energy level sequence; extracting energy level features of the sorted target energy level sequence to obtain target energy level features; and taking the target energy level feature as the input of a pre-trained quantum well width prediction model for operation to obtain a predicted quantum well width corresponding to the target energy level sequence. According to the quantum well width prediction method, device, equipment and product of the semiconductor quantum well, rapid and automatic direct solution from the target energy level sequence to the quantum well width can be achieved, and the problem that a traditional quantum well width design method is low in efficiency is solved.

The application provides a semiconductor quantum well structure for inhibiting carrier lateral diffusion and a preparation method. The structure comprises a lower barrier layer, a quantum well layer, a nucleation structure and an upper barrier layer which are sequentially stacked. The nucleation structure is island-shaped and / or groove-shaped, and the nucleation structure does not completely cover the quantum well layer. The band gap width of the nucleation structure is not equal to the band gap width of the upper barrier layer. The application can reduce the lateral diffusion of carriers in the quantum well, thereby reducing the non-radiative recombination of carriers in the dislocation area of the quantum well structure and improving the light emitting performance of the quantum well structure. The tolerance of a laser using the quantum well structure as an active region to dislocations will be obviously improved, especially for a Ⅲ-Ⅴ semiconductor quantum well laser grown by heteroepitaxy on a silicon substrate. The application is feasible, provides a new scheme for the growth of a semiconductor quantum well structure, and will promote the application of a corresponding semiconductor quantum well laser in a silicon-based optoelectronic integrated chip.

This disclosure provides a semiconductor quantum well, its fabrication method, and a quantum well device. The semiconductor quantum well includes a substrate, a lower barrier layer, a well layer, and an upper barrier layer. The lower barrier layer is located on the substrate. The well layer is located on the lower barrier layer. The upper barrier layer is located on the well layer. The barrier height between the upper barrier layer and the well layer is greater than the barrier height between the lower barrier layer and the well layer.

The present invention includes a receiving unit that includes a first solid-state device having a semiconductor quantum well structure, and receives multiple electron spin waves, a modulation unit that includes a second solid-state device having a semiconductor quantum well structure and connected to the receiving unit, and generates a multiplexed electron spin wave by synthesizing the electron spin waves from the receiving unit, and a separation unit that includes a third solid-state device having a semiconductor quantum well structure and connected to the modulation unit, receives the multiplexed electron spin wave synthesized in the modulation unit, and separates the multiple electron spin waves from the multiplexed electron spin wave. The modulation unit is a modulation unit that has a function of superposing the multiple electron spin waves by controlling an amplitude, a phase, and a polarization degree of freedom of the electron spin waves utilizing a persistent spin helix state in crystal orientation dependence of an effective magnetic field due to a spin-orbit interaction generated in a semiconductor quantum well structure.