Method for producing terahertz radiation of semiconductor quantum trap negative effective mass device
A technology of terahertz radiation and effective mass, which is applied in the field of semiconductor optoelectronic materials and devices, and can solve the problems of bulky and inconvenient use
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0018] With the present invention figure 2 The negative effective mass p of the P-type quantum well given in the inset + pp + The device structure of the diode is for the NEM p with p-region length l=0.25μm + pp + Negative effective mass oscillator, if the p-region doping concentration is N a =4.8×10 17 cm -3 , the lattice temperature is T=77K, then when the DC bias V dc When changing from 0.415V to 0.15V, the self-oscillation frequency f s Rising from 0.6THz to 2.6THz ( image 3 ). The semiconductor described in this embodiment is GaAs or AlGaAs.
PUM
Property | Measurement | Unit |
---|---|---|
Length | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com