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37results about How to "Control component" patented technology

Inclusion control method of Si-Mn-killed non-oriented silicon steel

The invention provides an inclusion control method of an Si-Mn-killed non-oriented silicon steel, and belongs to the technical field of steel smelting. The non-oriented silicon steel comprises the following chemical components: not greater than 0.005% of C, 0.4-1.0% of Si, 0.20-0.80% of Mn, not greater than 0.04% of P, not greater than 0.005% of S, not greater than 0.005% of Als, and the balance Fe and inevitable impurities. The method comprises the processes of smelting through a converter, refining under RH and vacuum, and continuously casting; the slag amount of the steel from the converteris strictly controlled; lime, synthetic slag and calcium carbide are added to adjust the slag; the refining under HR and vacuum is that a deep decarbonization mode is carried out; after decarbonization, metallic aluminum is added to realize preliminary dexidation, and SiC is added to the ladle slag surface at the same time in order to deoxidize and modify the slag; the operation is circulated for1-3min; then low-carbon low-titanium ferrosilicon is added to realize Low carbon, low titanium ferrosilicon; the operation is circulated for 3-6min, then manganese metal, ferrophosphorus and the likeare added to alloy, and the net circulating time is beyond 8min after alloying. With the adoption of the method, the composition of nonmetal inclusions in the steel can be improved, so that the performances of the non-oriented silicon steel can be improved, and the foundation is supplied to develop high-performance non-oriented silicon steels.
Owner:INST OF RES OF IRON & STEEL JIANGSU PROVINCE +2

Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof

The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO/glass substrate by way of spin coating, baking and annealing the FTO/glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.
Owner:盐城市鹤业实业投资有限公司

Chemical vapor deposition device and method

The invention provides a chemical vapor deposition device and method. The chemical vapor deposition device comprises an outer cavity body, a motion tray, inner cavity bodies, gas exhausting cavity bodies, tray grooves, chip bearing zones, heating devices, gas supply pipelines, first gas exhausting pipelines and a second gas exhausting pipeline; the same or different reaction precursor gases or inert gases are injected into the multiple independent inner cavity bodies, and through sealing of capillary gaps between the inner cavity bodies and the upper surface of the tray, the pressure intensityof the inner cavity bodies is always higher than that of the outer cavity body; and each inner cavity body is independently subjected gas feeding and gas exhausting, and independently heated and cooled; by controlling the motion tray to continuously rotate or rotate in an indexing mode, reaction precursors sprayed by nozzles in the different inner cavity bodies can be sprayed onto chips arrangedon the chip bearing zones on the upper surface of the motion tray by turns, and continuous chemical vapor deposition or periodic atomic layer deposition of a film is achieved. According to the chemical vapor deposition device and method, the different reaction precursors can be isolated, quick temperature raising, temperature lowering and gas switching are achieved, and the semiconductor film growing yield and productive rate are advantageously increased.
Owner:左然 +1

Method for preparing copper zinc tin sulfide thin film on flexible substrate through magnetron sputtering method

The invention discloses a method for preparing a copper zinc tin sulfide thin film on a flexible substrate through a magnetron sputtering method. According to the method, magnetron sputtering is conducted on a metal Cu-Zn-Sn precursor on a flexible substrate material first, and then a sulfidizing method is used for preparing the copper zinc tin sulfide thin film. The method specifically includes the following steps that metal Cu, Zn and Sn targets are chosen as sputtering target materials; the flexible substrate material is cleaned; the magnetron sputtering method is used, and the metal Cu-Zn-Sn precursor is deposited on the flexible substrate; sulfidizing is conducted on the Cu-Zn-Sn precursor in a sulfur-containing atmosphere, so that the flexible substrate copper zinc tin sulfide thin film is obtained; the prepared flexible substrate copper zinc tin sulfide thin film has an excellent optical absorption property in a visible region. The method for preparing the copper zinc tin sulfide thin film on the flexible substrate through the magnetron sputtering method can be applied to different types of flexible substrate materials, and has the advantages of being capable of effectively adjusting the components of the thin film, improving the crystal quality of the thin film, being good in technological process repeatability and the like.
Owner:GUANGDONG UNIV OF TECH

A method for controlling inclusions in silicon-manganese killed non-oriented silicon steel

The invention provides an inclusion control method of an Si-Mn-killed non-oriented silicon steel, and belongs to the technical field of steel smelting. The non-oriented silicon steel comprises the following chemical components: not greater than 0.005% of C, 0.4-1.0% of Si, 0.20-0.80% of Mn, not greater than 0.04% of P, not greater than 0.005% of S, not greater than 0.005% of Als, and the balance Fe and inevitable impurities. The method comprises the processes of smelting through a converter, refining under RH and vacuum, and continuously casting; the slag amount of the steel from the converteris strictly controlled; lime, synthetic slag and calcium carbide are added to adjust the slag; the refining under HR and vacuum is that a deep decarbonization mode is carried out; after decarbonization, metallic aluminum is added to realize preliminary dexidation, and SiC is added to the ladle slag surface at the same time in order to deoxidize and modify the slag; the operation is circulated for1-3min; then low-carbon low-titanium ferrosilicon is added to realize Low carbon, low titanium ferrosilicon; the operation is circulated for 3-6min, then manganese metal, ferrophosphorus and the likeare added to alloy, and the net circulating time is beyond 8min after alloying. With the adoption of the method, the composition of nonmetal inclusions in the steel can be improved, so that the performances of the non-oriented silicon steel can be improved, and the foundation is supplied to develop high-performance non-oriented silicon steels.
Owner:INST OF RES OF IRON & STEEL JIANGSU PROVINCE +2

Camellia seed screening device for oil-tea camellia processing

InactiveCN109277292AReasonable designControl the amount of sieveSievingScreeningEngineeringCamellia oleifera
The invention discloses a camellia seed screening device for oil-tea camellia processing. The camellia seed screening device comprises a box body, four sets of supporting legs, a storage box, a firstfilter screen, a second filter screen and a cleaning device, wherein the four sets of supporting legs are fixedly welded to the four corners of the bottom of the box body, the storage box is disposedon the left side of the top of the box body, a first discharge hole is formed in the position, close to the top, of the right side wall of the box body, and a second discharge hole is formed in the middle section of the left side wall of the box body. The first filter screen and the second filter screen are fixedly arranged in the box body from top to bottom, an inclined table is placed at the bottom of the box body, the lowest end of the first filter screen communicates with the feeding end of the first discharge hole, the lowest end of the second filter screen communicates with the feeding end of the second discharge hole, and the lowest end of the inclined table communicates with the lowest end of a third discharge hole. The camellia seed screening device for oil-tea camellia processingis reasonable in design and can effectively screen camellia seeds, can effectively control the screening amount of the camellia seeds, can effectively clean the filter screens, and is suitable for popularization and use.
Owner:耒阳市利荆农林种植专业合作社

Damage-free waste drilling fluid processing process

InactiveCN104975817AReduce the concentration of densityReduce concentrationFlushingLiquid wasteClay minerals
The invention discloses a damage-free waste drilling fluid processing process, which comprises the following steps of: firstly drilling a wellhead by a drilling machine, and injecting wellhead slurry; passing a mixture of waste drilling fluid and the wellhead slurry through a vibration sieve to be filtered for obtaining rock debris, and meanwhile, feeding filter liquid into a desander; putting the obtained rock debris into a cleaner a, performing cleaning through externally injected clean water to obtain clean rock debris and medium-coarse sand, and meanwhile, merging the clean water a into circulation water; passing the filter liquid through the desander to obtain medium-fine sand; putting the obtained medium-fine sand into a cleaner b; using introduced clean water for cleaning to obtain clean sand; merging cleaning water b into the circulation water; and meanwhile, feeding the filter liquid obtained after passing through the desander into a desilter. The damage-free waste drilling fluid processing process has the advantages that through the principle, on the premise of not easily causing rock framework collapse due to clay mineral swelling and transportation, various different solid-phase particles in the waste drilling fluid can be processed; the circulation flowing use of the waste drilling fluid is ensured; and the condition that the fluid cannot reach a borehole from a flow storage layer is avoided.
Owner:CHENGDU GAOPU PETROLEUM ENG TECH

A kind of polymyxin b sulfate production strain, preparation method and application of polymyxin b sulfate

ActiveCN111100823BStrong ability to produce polymyxin B sulfateImprove abilitiesBacteriaMutant preparationBiotechnologyMetabolite
The invention belongs to the technical field of biological fermentation, and in particular relates to a polymyxin B sulfate production strain, a preparation method and application of polymyxin B sulfate. The present invention obtains a polymyxin B sulfate production strain through mutagenesis breeding, and optimizes the carbon source and nitrogen source of the fermentation medium, precisely regulates the fermentation conditions such as the inoculum amount, fermentation temperature, fermentation time, and tank pressure, and controls the The metabolite components finally utilize the bacterial strain obtained by mutagenesis of the present invention to produce polymyxin B sulfate in a tank unit of 2.0 g/L, exceeding the industry average level by 20%. The proportions of several impurity peaks specified by the USP/EP Pharmacopoeia in the fermented liquid in tanks are far lower than the levels recorded in domestic literature. Separation and purification of the fermentation broth to obtain high-purity and high-content polymyxin B sulfate, the biometric titer of the finished product is greater than 8100u/mg, the purity and content are both greater than 90%, the single impurities and components are all qualified, and the total impurities are less than 8 %, product quality is much higher than USP/EP standard.
Owner:黄石曼菲特生物科技有限公司

Growing method of (KxNa1-x)1-yLiyNbO3-based lead-free piezoelectric monocrystal

The invention discloses a method for growing a (KxNa1-x)1-yLiyNbO3-based lead-free piezoelectric monocrystal. The method comprises the following steps: weighing raw material powder; weighing a fluxing agent and mixing with the raw material powder; putting the starting material into a crucible and putting the crucible into a furnace; carrying out heat preservation on the crucible at a temperature of 400 DEG C to 900 DEG C for 2 to 20 hours, then heating to 700 DEG C to 1000 DEG C, carrying out heat preservation for 2 to 20 hours until the starting material is completely molten and cooling the interior of the furnace to a room temperature at the speed of 1 to 200 DEG C/h so as to obtain the (KxNa1-x)1-yLiyNbO3-based lead-free piezoelectric monocrystal. The (KxNa1-x)1-yLiyNbO3-based lead-free piezoelectric monocrystal grown by virtue of a low-temperature preparation technology is of a pure perovskite structure and cannot generate impure phases. The method has the advantages that 1, the crystal grows at a low temperature and has a short growth period; 2, the requirement on a growing instrument is low during a low-temperature growing process; 3, the raw material powder contained in the crucible can be conveniently sealed and is nearly not volatilized due to a low growing temperature, so that the components of the growing crystal can be well controlled so as to prevent the deviation of the components.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

B-site Mn and Ni co-doped high-remanent-polarization BiFeO3 film and preparation method thereof

The invention discloses a B-site Mn and Ni co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, manganese acetate and nickel acetate according to a molar ratio of 1.05:[(0.92-0.98)-x]:(0.02-0.08):x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride, uniformly stirring to obtain a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol/L, and x is equal to 0.01 to 0.03; spin coating the BiFeO3 precursor solution on a FTO/glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline state BiFeO3 film; repeatedly operating until the BiFeO3 film reaches the needed thickness after the crystalline state BiFeO3 film is cooled, thus obtaining the B-site Mn and Ni co-doped high-remanent polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH

Preparation method of non-rectangular III-V semiconductor quantum well based on bismuth element

The invention relates to a preparation method for a bismuth-based non-rectangular group III-V semiconductor quantum well. The preparation method comprises the step of growing a potential well material and a potential barrier material of a group III-V semiconductor quantum well, wherein bismuth is added in the growth processes of both the potential well material and the potential barrier material. According to the preparation method, bismuth beam source shutters are opened simultaneously in the processes of growing the potential well material and the potential barrier material of the quantum well, and a non-rectangular quantum well structure is realized by utilizing the group III element interdiffusion caused by the bismuth. By the method, material components can be controlled effectively; the problem that the conventional growth method is only suitable for growing a rectangular quantum well structure with component mutations is solved; greater freedom is introduced to the design and the implementation of the structure and the functional of quantum; the preparation method disclosed by the invention is suitable for adopting a plurality of material growth means, such as molecular beam epitaxy and atomic layer deposition; and the operation process is simple and convenient.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

A method for controlling inclusions in ultra-low aluminum non-oriented silicon steel

The invention provides a method for controlling inclusions in ultra-low aluminum non-oriented silicon steel. The chemical composition mass percentage of the steel is C≤0.005%, Si: 0.25%‑1.50%, Mn: 0.15%‑0.55%, P: 0.02%‑0.06%, S≤0.005%, Als≤0.005%, and the balance is Fe and unavoidable impurities. The process flow is: KR→BOF→RH→continuous casting. Converter tapping strictly controls the amount of slag, adding lime and slag surface deoxidizer to adjust slag at the end of tapping; after RH decarburization, first add low-carbon and low-sulfur ferrosilicon, metal aluminum or aluminum-calcium-iron alloy compound deoxidation, and finally add metal manganese , ferrophosphorus for alloying, and then a net cycle of 6-10min, the steel is broken out and transported to continuous casting. The obtained molten steel is mainly SiO 2 ‑Al 2 o 3 System inclusions, avoiding the formation of low melting point SiO 2 ‑MnO-based inclusions make the rolling elongation longer and affect the grain growth; at the same time, it also avoids the formation of high SiO 2 The components are acidic inclusions, leading to corrosion of refractory materials. It can significantly improve the type of non-metallic inclusions in steel, improve the performance of non-oriented silicon steel, and improve the pouring performance of molten steel.
Owner:INST OF RES OF IRON & STEEL JIANGSU PROVINCE +2

Method for preparing copper-zinc-tin-sulfur thin film on flexible substrate by magnetron sputtering

The invention discloses a method for preparing a copper zinc tin sulfide thin film on a flexible substrate through a magnetron sputtering method. According to the method, magnetron sputtering is conducted on a metal Cu-Zn-Sn precursor on a flexible substrate material first, and then a sulfidizing method is used for preparing the copper zinc tin sulfide thin film. The method specifically includes the following steps that metal Cu, Zn and Sn targets are chosen as sputtering target materials; the flexible substrate material is cleaned; the magnetron sputtering method is used, and the metal Cu-Zn-Sn precursor is deposited on the flexible substrate; sulfidizing is conducted on the Cu-Zn-Sn precursor in a sulfur-containing atmosphere, so that the flexible substrate copper zinc tin sulfide thin film is obtained; the prepared flexible substrate copper zinc tin sulfide thin film has an excellent optical absorption property in a visible region. The method for preparing the copper zinc tin sulfide thin film on the flexible substrate through the magnetron sputtering method can be applied to different types of flexible substrate materials, and has the advantages of being capable of effectively adjusting the components of the thin film, improving the crystal quality of the thin film, being good in technological process repeatability and the like.
Owner:GUANGDONG UNIV OF TECH

Quantity-controllable dry packaging equipment for mandarin orange coarse grain powder

The invention relates to packaging equipment, in particular to quantity-controllable dry packaging equipment for mandarin orange coarse grain powder. The technical problem to be solved by the invention is to provide the quantity-controllable dry packaging equipment for mandarin orange coarse grain powder, which is simple, convenient and efficient. The quantity-controllable dry packaging equipment for the mandarin orange coarse grain powder comprises a rack, a supporting frame, a material storage box, a driving assembly, an opening assembly and a blocking assembly. The supporting frame is mounted on the rack. The material storage box is mounted on the rack. The driving assembly is mounted between the rack and the supporting frame. The opening assembly is mounted on the supporting frame. And the blocking assembly is mounted on the rack. The equipment is provided with a pushing assembly, so that workers do not need to manually control a connecting rod for discharging, and the burdens of the workers are reduced; and meanwhile, the falling amount of dried mandarin orange coarse grain powder can be controlled by controlling a first lead screw. The equipment is provided with a downward pressing assembly, so that the workers do not need to manually control a pushing plate to reset a blocking plate, and then the operation trouble of the worker is saved again.
Owner:JIANGXI BOJUN ECOLOGICAL AGRI DEV CO LTD
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