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A chemical vapor deposition device and method

A chemical vapor deposition and heating device technology, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor film growth consistency and low growth rate, and achieve reduced processing costs and less heating Effects of area, guaranteed cleanliness and relative independence

Active Publication Date: 2022-02-11
安徽微迈思科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The purpose of the present invention is to provide a chemical vapor deposition device and method for the above problems, which can effectively avoid the problems of gas phase parasitic reaction, cross-contamination, low growth rate and poor film growth consistency in film growth, and can isolate different reaction precursors, and achieve rapid heating and cooling and gas switching

Method used

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  • A chemical vapor deposition device and method
  • A chemical vapor deposition device and method
  • A chemical vapor deposition device and method

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Embodiment 1

[0049] Such as figure 1 , 2 and 3, figure 1 It is a schematic structural diagram of a chemical vapor deposition device provided by the present invention, figure 2 It is a schematic top view of a structure of the chemical vapor deposition device provided by the present invention after removing the outer cavity, image 3 It is a schematic top view of another structure of the chemical vapor deposition device provided by the present invention after removing the outer cavity. The chemical vapor deposition device includes an outer cavity 1, a moving tray 2, an inner cavity 3, an exhaust cavity 4, a tray groove 14, a wafer loading area 6, a heating device 9, a gas supply pipeline 10, a second An exhaust duct 11 and a second exhaust duct 12;

[0050] The outer cavity 1 is a cylindrical airtight cavity structure; the moving tray 2 is thin cylindrical, the diameter of the moving tray 2 is slightly smaller than the diameter of the outer cavity 1, and the moving tray 2 is horizontall...

Embodiment 2

[0076] Such as Figure 4 Shown is one embodiment of the chemical vapor deposition apparatus of the present invention. The moving tray 2 is indexed and rotated between the inner cavity 3a and the inner cavity 3b, and the wafers 7 that are separately arranged on each wafer loading area 6 on the upper surface of the moving tray 2 stay in different inner cavities 3a or 3b for a while in turn, The reaction precursor in the inner chamber 3a and the purge gas in the inner chamber 3b are received alternately, with a typical residence time of 1-5 seconds. For example, the wafer carrying area 6 first passes through the inner chamber 3 for transporting the Group III precursor, and the surface adsorbs the Group III precursor; 2 The inner cavity 3 of the group III gas-phase precursor is purged away, leaving only the surface adsorbed particles; and then the group V precursor is continuously adsorbed on the surface of the group III precursor through the inner cavity 3 of the group V; Final...

Embodiment 3

[0078] Such as Figure 5 Shown is another embodiment of the chemical vapor deposition apparatus of the present invention. The introduction of inert gas into the inner chamber 3 is canceled, and only the reaction precursor is introduced into the inner chamber 3 . The moving tray 2 is indexed and rotated among a plurality of inner cavities 3 , and the wafers arranged on each wafer carrying area 6 on the upper surface of the moving tray 2 pass through different inner cavities 3 in turn, but do not stay. Due to the lack of inert gas purge, when the wafer 7 is switched from one cavity 3 to another, the boundary layer above the surface of the wafer 7 will carry a small amount of the reaction precursor of the previous cavity 3 . Due to the capillary isolation between the inner chamber 3 and the outer chamber 1, the amount of the former reaction precursor in the gas phase above the wafer 7 is very small, and there is still only one reaction precursor, thus greatly reducing the gas ph...

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Abstract

The present invention provides a chemical vapor deposition device and method, comprising an outer cavity, a moving tray, an inner cavity, an exhaust cavity, a tray groove, a wafer loading area, a heating device, a gas supply pipeline, a first exhaust pipeline and The second exhaust pipe; the same or different reaction precursor gas or inert gas is passed into several independent inner cavities, and the capillary gap between the inner cavity and the upper surface of the tray is sealed, so that the pressure of the inner cavity is always higher than The pressure of the outer cavity; each inner cavity has independent air intake and exhaust, independent heating and cooling; by controlling the continuous or indexed rotation of the moving tray, the wafers on each wafer loading area on the upper surface of the moving tray can be received in turn The reactive precursors ejected from the nozzles in different inner cavities realize continuous chemical vapor deposition or periodic atomic layer deposition of thin films. The invention can isolate different reaction precursors, realize rapid heating and cooling temperature and gas switching, and help to improve the yield and productivity of semiconductor thin film growth.

Description

technical field [0001] The invention belongs to the technical field of semiconductor equipment, and in particular relates to a chemical vapor deposition device and method. Background technique [0002] Chemical vapor deposition CVD is a key process for preparing semiconductor thin film devices, including solar thin film batteries, blue-violet LEDs, high-power power electronic devices and two-dimensional materials. CVD reactor is the key equipment to realize the above process. Most of the current CVD growth is to carry the more volatile reaction precursors into the reaction chamber through the carrier gas such as hydrogen or nitrogen, and use high temperature or plasma to activate the chemical reaction to achieve thin film deposition and grow thin film heterojunctions that meet the device requirements. . [0003] In order to obtain uniform film composition, thickness, and high growth rate, most of the existing film growth processes need to heat the wafer to a high temperatu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/44
CPCC23C16/45551C23C16/45557C23C16/4584C23C16/4412
Inventor 左然陈景升
Owner 安徽微迈思科技有限公司
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