A kind of reactor assembly for preparing crystal by pvt method and its use method and application

Abstract

The application discloses a reactor component for preparing crystals by PVT method, which belongs to the field of semiconductor material preparation. The reactor assembly includes: a reaction chamber, the reaction chamber includes a raw material chamber and a waste material chamber, the bottom end of the waste material chamber is lower than the bottom end of the raw material chamber; a heating mechanism, the heating mechanism is sleeved on the raw material The outer side of the chamber is used to heat the raw material chamber; the crystal growth chamber is connected to the raw material chamber through the gas phase transmission channel, and the raw material gas generated by the sublimation of the raw material in the raw material chamber is transported to the crystal growth at the seed crystal in the crystal growth chamber; and a plugging flow mechanism, the plugging flow mechanism moves the waste generated during the crystal growth process in the raw material chamber to the waste material chamber. The reactor assembly can move the waste material to the waste material cavity in time, improve the sublimation rate and utilization rate of the raw material, and reduce crystal defects.

Description

technical field [0001] The application relates to a reactor assembly for preparing crystals by PVT method, which belongs to the field of semiconductor material preparation. Background technique [0002] At present, in the preparation of silicon carbide crystals, physical vapor transport (PVT method for short) technology is mainly used, which decomposes silicon carbide raw materials into gas phase components Si by sublimation. m C n Finally, driven by the axial temperature gradient, it is transported to the seed crystal and grows into silicon carbide crystals. The PVT method is a complex process, and many parameters must be comprehensively controlled, such as growth temperature, temperature gradient, direct distance between the seed crystal and the growth material, gas pressure, etc. If any parameter is not well controlled, the stability of crystal growth Sex will be destroyed. [0003] In the later stage of the growth of silicon carbide crystals, the silicon carbide raw m...

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Problems solved by technology

Graphitization of silicon carbide raw materials is a common instability factor, which will increase the possibility of crystal graphitization and the formation of other defects, so that the crystal growth rate is largely limited

[0004] The current solution is to add additional solid silicon to the graphite crucible, which can compensate for the lack of silicon in the growth material and prevent the graphitization of the growth material to a certain extent, but this will lead to the formation of liquid silicon droplets and the formation of polymorphic structures. The second is to use tantalum crucibles to create an environment for adsorbing carbon, which can significantly inhibit the graphitization of growth raw materials, but the price of tantalum crucibles is too high to be used on a large scale

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