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BiFe1-XMnXO3 ferroelectric film with high remnant polarization and preparation method thereof

A technology of ferroelectric thin film and polarization strength, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problems of unmeasured ferroelectric and piezoelectric properties, lower effective voltage, and easy breakdown of thin films, etc. problem, to achieve the effect of precise and controllable chemical composition, reduced leakage current, and easy control of doping amount

Active Publication Date: 2014-04-23
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The leakage current reduces the effective voltage that can be applied to the test, BiFeO 3 The film is easily broken down, and the required properties such as ferroelectricity and piezoelectricity cannot be measured, which seriously hinders the application of this material in fields such as information storage

Method used

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  • BiFe1-XMnXO3 ferroelectric film with high remnant polarization and preparation method thereof
  • BiFe1-XMnXO3 ferroelectric film with high remnant polarization and preparation method thereof
  • BiFe1-XMnXO3 ferroelectric film with high remnant polarization and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0039] Step 1: Select the FTO / glass substrate as the substrate, and place the cut FTO / glass substrate in detergent, acetone and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally use nitrogen. Blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, take it out and let it stand to room temperature. Finally, the clean FTO / glass substrate was placed in an ultraviolet irradiator to irradiate it for 40 minutes to achieve "atomic cleanliness" on the surface of the substrate.

[0040] Step 2: The massage ratio is 1.05:0.98:0.02 (ie x=0.02) and Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in the mixed solution, and after 2.5 hours of magnetic stirring, a uniform and stable precursor solution is obtained. The mixed solution is a mixture of ethylene glycol methyl ether and acetic anhydride in a volume ratio of 3:1. The ...

Embodiment 2

[0045] Step 1: Select the FTO / glass substrate as the substrate, and place the cut FTO / glass substrate in detergent, acetone and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally use nitrogen. Blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, take it out and let it stand to room temperature. Finally, the clean FTO / glass substrate was placed in an ultraviolet irradiator to irradiate it for 40 minutes to achieve "atomic cleanliness" on the surface of the substrate.

[0046] Step 2: The massage ratio is 1.05:0.96:0.04 (ie x=0.04) and Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in the mixed solution, and after 2.5 hours of magnetic stirring, a uniform and stable precursor solution is obtained. The mixed solution is a mixture of ethylene glycol methyl ether and acetic anhydride in a volume ratio of 3:1. The ...

Embodiment 3

[0051] Step 1: Select the FTO / glass substrate as the substrate, and place the cut FTO / glass substrate in detergent, acetone and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally use nitrogen. Blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, take it out and let it stand to room temperature. Finally, the clean FTO / glass substrate was placed in an ultraviolet irradiator to irradiate it for 40 minutes to achieve "atomic cleanliness" on the surface of the substrate.

[0052] Step 2: The massage ratio is 1.05:0.95:0.05 (ie x=0.05) and Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in the mixed solution, and after 2.5 hours of magnetic stirring, a uniform and stable precursor solution is obtained. The mixed solution is a mixture of ethylene glycol methyl ether and acetic anhydride in a volume ratio of 3:1. The ...

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Abstract

The invention discloses a BiFe1-XMnXO3 ferroelectric film with high remnant polarization and a preparation method thereof, and x is equal to 0.02-0.08. The BiFe1-XMnXO3 ferroelectric film is of a twisty perovskite structure, belongs to a rhombohedral system, and is good in uniformity. At the frequency of 1kHz, the remnant polarization is 100-130.4mu C / cm<2>. The preparation method comprises the steps of: dissolving bismuth nitrate, ferric nitrate and manganese acetate in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride according to a molar ratio of 1.05:(1-x) to obtain a precursor solution; and spinning the precursor solution on a substrate, homogenating and baking to obtain a dry film; annealing to obtain the BiFe1-XMnXO3 ferroelectric film, repeatedly carrying out the steps of spinning the precursor solution, baking, and annealing till a required film thickness is reached, thus obtainng the BiFe1-XMnXO3 ferroelectric film with high remnant polarization. The BiFe1-XMnXO3 ferroelectric film is simple in requirement of equipment, easily controllable in doping amount, and capable of greatly improving ferroelectric properties and dielectric properties of a BiFeO3 film.

Description

Technical field [0001] The invention belongs to the field of functional materials, and specifically relates to a BiFe with high residual polarization strength 1-x Mn x O 3 Ferroelectric thin film and its preparation method. Background technique [0002] BiFeO 3 Has a very high polarization intensity value, high ferroelectric order temperature (T C =1103K) and antiferromagnetic order temperature (T N =640K), and has magnetoelectric coupling properties at room temperature. This material complements the shortcomings of pure ferroelectric or ferromagnetic materials while presenting electrical and magnetic order. This mutual control of magnetism and electricity is in information storage, spintronic devices, magnetic sensors, and capacitance-inductance. All integrated devices have extremely important application prospects and have aroused widespread interest in recent years. [0003] However, BiFeO 3 The biggest problem in the film is the large leakage current, which makes BiFeO 3 Its e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00
Inventor 谈国强耶维
Owner SHAANXI UNIV OF SCI & TECH
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