Method for manufacturing a device (400) comprising the following steps: Providing a non-uniform
doping profile in a
semiconductor substrate (102) such that an
electric field with
vertical field vector components is generated in at least a part of a light conversion region (112) of the
semiconductor substrate (102), and Generating (606) a control
electrode structure comprising multiple control electrodes (106, 106b, 106c) above the non-uniform
doping profile for steering light-generated charge carriers, wherein the control
electrode structure is arranged between two
diode structures (114) for accumulating the light-generated charge carriers, where the provision of the uneven
doping profile exhibits: Providing (602) a doped layer (202) in the light conversion region (112), wherein the doped layer (202) comprises doping atoms, wherein providing the doped layer comprises generating the doped layer (202) such that the doped layer (202) has a
lateral variation of a net doping concentration, wherein the
lateral variation of the net doping concentration is symmetrical with respect to a center of the control
electrode structure, Performing (604) a migration step to migrate at least some of the doping atoms of the doped layer (202) to an area above the doped layer (202), wherein the non-uniform
doping profile in the vertical direction exhibits a local maximum of the net doping concentration in the doped layer (202), wherein the net doping concentration decreases in the vertical direction from the doped layer (202) towards the control electrode structure, so that light-generated charge carriers that are generated within a first depth region are directed towards the control electrode structure, wherein the net doping concentration decreases in the vertical direction from the doped layer (202) away from the control electrode structure, so that the light-generated charge carriers that are generated within a second depth region are directed away from the control electrode structure, where the doped layer (202) is a buried layer, furthermore, at least one additional doped layer (204) is provided at a depth that differs from the depth of the doped layer (202), wherein the further doped layer (204) is spatially separated from the doped layer (202) by the
semiconductor substrate, wherein the further doped layer (204) provides a
shielding effect for the
diode structures (114), so that the light-generated charge carriers may not move directly from within the light conversion region (112) to the
diode structures (114), but only under the influence of electric fields generated by the control electrodes (106, 106b, 106c), and wherein the further doped layer (204) extends in a lateral direction at least beyond a defined area to which the light-generated charge carriers are directed.