31results about How to "Reduce leakage conductance" patented technology

The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO/glass substrate by way of spin coating, baking and annealing the FTO/glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.

The invention discloses an NBT/PVDF three-layer structured composite material for energy storage and a preparation method of the NBT/PVDF three-layer structured composite material for the energy storage. NBT particle powder is prepared through a ball-milling method; PVDF is divided into three parts which are respectively dissolved in a solvent to obtain three PVDF solutions; the NBT particle powder is divided into two parts and respectively added to two PVDF solutions to obtain two NBT/PVDF stock solutions; the NBT/PVDF stock solutions, the PVDF solutions and the NBT/PVDF stock solutions are laminated and subjected to tape casting on a glass substrate sequentially by using a multi-layer tape casting process. A middle layer of the composite material is a pure PVDF polymer, and the two layers of the upper and lower layers are NBT/PVDF composite layers, dielectric ceramic particles are added in an upper-lower two-layer structure, the polarization intensity and energy storage density are used, and the middle layer uses the pure PVDF polymer to obtain high breakdown field strength.

The invention provides a preparation method of a low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and chromic nitrate at a molar ratio of 0.97:(1-x):0.08:x into the mixed solution of ethylene glycol monomethyl ether and acetic anhydride to form a mixed solution; adding ethanolamine into the mixed solution to adjust the viscosity and the complexing degree to obtain a stable BiFeO3 precursor liquid; and preparing a Tb and Cr co-doped crystalline BiFeO3 film by a spin-coating method and layer-by-layer annealing technology. The film is a crystalline Bi0.92Tb0.08Fe0.99Cr0.01O3 film, wherein the leakage current density is still kept below 10<-4>A/cm<2> in a 150kv/cm test electric field. According to the method provided by the invention, the requirements on equipment are simple, the experimental conditions are easy to realize, the prepared film has good uniformity, and the leakage current of the film is reduced through the co-doping of Tb and Cr.

The invention discloses a Bi0.92Dy0.08Fe(1-x)MnxO3 ferroelectric film with a low coercive field and a preparation method of the film. In Bi0.92Dy0.08Fe(1-x)MnxO3, x is 0.01-0.05; the film is of a rhombohedral structure and is good in uniformity; the residual polarization intensity is 58.27-69.87 muC/cm<2>; the coercive field is 318-448kV/cm; the dielectric constant is 214.4-260.6. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, dysprosium nitrate and manganese acetate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic oxide in a mixing manner, so as to obtain a precursor solution; spinning the precursor solution on a substrate; baking after spinning to obtain a dry film; annealing to obtain the Bi0.92Dy0.08Fe(1-x)MnxO3 film; repeatedly spinning the precursor solution, baking and annealing to achieve the required film thickness, so as to obtain the film. According to the invention, equipment requirements are simple, doping content is easy to control, and the ferroelectric properties of the BiFeO3 film can be greatly improved.

The invention relates to an alumina based dielectric film for high energy storage density capacitor and a preparation method. The chemical composition is Al2Bi2-xSiyOz, where: x = 0.005 - 0.1, y = 0.02, the sol-gel method is used to produce the alumina-based dielectric film. Compared with the prior art, the alumina-based dielectric film prepared by the invention has the breakdown voltage between 80V and 200V, the leakage conductance less than 1[mu]A before breakdown, and the dielectric constant higher than that of the traditional alumina film, and can be applied to various high energy density and high voltage capacitors. Compared with the prior art, the preparation process of the invention is simple, the film is compact and uniform, and the dielectric properties are excellent.

The invention relates to the technical field of micro-nano electronics, and discloses a gating tube material which is a compound containing germanium sulfide (GeS) and arsenic telluride (As2Te3). Thegeneral chemical formula of the gating tube material is (GeS)1-X(As2Te3)X, wherein X is the proportion of the compound, and X is larger than 0 and smaller than or equal to 0.5. The gating tube material provided by the invention has the characteristic of small turn-on voltage.

The invention discloses a La, Er, Co and Mn co-doped BFO film with a resistance switching effect and a preparation method of the film. The chemical formula of the film is Bi0.9-xLaxEr0.1Fe0.96Co0.02Mn0.02O3, x=0.01-0.09, the film is of a twisted rhombic perovskite structure, a space group is R3c, and the film grows along a (101) direction. The film is prepared by a sol-gel method through a layer-by-layer annealing process, a preparation method is simple, reaction is easy, technology process temperature is low, and a preparation process is easily controlled. According to the A-site rare earth ion and B-site magnetic transition metal ion co-doped BiFeO3 film, a middle transition layer is formed an interface of the film and an electrode film, kinds and quantity of an oxygen vacancy at a BiFeO3 film interface are changed along with mixing of La ions in the BiFeO3 film, and the film has the resistance switching effect.

The invention discloses a Bi(1-x)DyxFeO3 low leakage current film and a preparation method thereof. X is 0.09-0.12, the film is of a rhombohedral structure and good in uniformity, a space point group is R-3m(166), and the leakage current density is 1.01*10<-8> to 6.39*10<-9> A/cm<2> under the electric field of 117kV/cm. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and dysprosium nitrate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic anhydride in a mixing manner according to the molar ratio of (1.05-x):1:x, so as to obtain a precursor solution; spinning a substrate by the precursor solution, baking to obtain a dry film after spinning, and then annealing to obtain a Bi(1-x)DyxFeO3 film; repeatedly spinning the precursor solution, baking and annealing to the required film thickness, so as to obtain the Bi(1-x)DyxFeO3 low leakage current film. The film is simple in demands on equipment, and doping amount is easy to control, and the leakage current density of the Bi(1-x)DyxFeO3 film can be greatly reduced.