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Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof
ActiveCN103601250AReduce generationImprove insulation performanceIron compoundsNitrateAcetic anhydride
The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO / glass substrate by way of spin coating, baking and annealing the FTO / glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.
Owner:盐城市鹤业实业投资有限公司
NBT/PVDF three-layer structured composite material for energy storage and preparation method thereof
InactiveCN108101384AHigh polarizationHigh energy storage densityCoatingsPolyvinylidene difluorideSolvent
The invention discloses an NBT / PVDF three-layer structured composite material for energy storage and a preparation method of the NBT / PVDF three-layer structured composite material for the energy storage. NBT particle powder is prepared through a ball-milling method; PVDF is divided into three parts which are respectively dissolved in a solvent to obtain three PVDF solutions; the NBT particle powder is divided into two parts and respectively added to two PVDF solutions to obtain two NBT / PVDF stock solutions; the NBT / PVDF stock solutions, the PVDF solutions and the NBT / PVDF stock solutions are laminated and subjected to tape casting on a glass substrate sequentially by using a multi-layer tape casting process. A middle layer of the composite material is a pure PVDF polymer, and the two layers of the upper and lower layers are NBT / PVDF composite layers, dielectric ceramic particles are added in an upper-lower two-layer structure, the polarization intensity and energy storage density are used, and the middle layer uses the pure PVDF polymer to obtain high breakdown field strength.
Owner:SHAANXI UNIV OF SCI & TECH
Preparation method of low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film
ActiveCN102976764AImprove multiferroic propertiesImprove electrical performanceAcetic anhydrideLow leakage
The invention provides a preparation method of a low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and chromic nitrate at a molar ratio of 0.97:(1-x):0.08:x into the mixed solution of ethylene glycol monomethyl ether and acetic anhydride to form a mixed solution; adding ethanolamine into the mixed solution to adjust the viscosity and the complexing degree to obtain a stable BiFeO3 precursor liquid; and preparing a Tb and Cr co-doped crystalline BiFeO3 film by a spin-coating method and layer-by-layer annealing technology. The film is a crystalline Bi0.92Tb0.08Fe0.99Cr0.01O3 film, wherein the leakage current density is still kept below 10<-4>A / cm<2> in a 150kv / cm test electric field. According to the method provided by the invention, the requirements on equipment are simple, the experimental conditions are easy to realize, the prepared film has good uniformity, and the leakage current of the film is reduced through the co-doping of Tb and Cr.
Owner:SHAANXI UNIV OF SCI & TECH
Bi0.92Dy0.08Fe(1-x)MnxO3 ferroelectric film with low coercive field and preparation method of film
ActiveCN103771527AGood uniformityEnhanced ferroelectric and dielectric propertiesIron compoundsEthylene glycol monomethyl etherChemistry
Owner:SHAANXI UNIV OF SCI & TECH
Bi0.90Ho0.10Fe1-XMnXO3 ferroelectric film with high remanent polarization and preparation method thereof
ActiveCN103708562AImprove insulation performanceReduce generationIron compoundsCrystal systemMANGANESE ACETATE
The invention relates to a Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and a preparation method thereof, wherein x is equal to 0.01-0.05, and the film is of a distorted perovskite structure, has a diamond crystal system and has good uniformity, remanent polarization of 78-108 muC / cm<2>, and a dielectric constant of 196.2-271.8. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate, holmium nitrate and manganese acetate in a mixture prepared by mixing ethylene glycol monomethyl ether and acetic anhydride to obtain a precursor solution; spin-coating the precursor solution on a substrate, coating glue evenly, then baking to obtain a dry film, then annealing to obtain a Bi0.90Ho0.10Fe1-xMnXO3 film, and repeatedly spin-coating the precursor solution, baking and annealing to achieve the required film thickness to obtain the film. According to the Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and the preparation method thereof, the requirements for equipment are simple, the doping amount is easy to control, and the ferroelectric properties of the BiFeO3 film can be greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH
Alumina based dielectric film for high energy storage density capacitor and preparation method
InactiveCN106887331AReduce leakage conductanceSimple preparation processThin/thick film capacitorFixed capacitor dielectricHigh voltage capacitorsHigh energy
The invention relates to an alumina based dielectric film for high energy storage density capacitor and a preparation method. The chemical composition is Al2Bi2-xSiyOz, where: x = 0.005 - 0.1, y = 0.02, the sol-gel method is used to produce the alumina-based dielectric film. Compared with the prior art, the alumina-based dielectric film prepared by the invention has the breakdown voltage between 80V and 200V, the leakage conductance less than 1[mu]A before breakdown, and the dielectric constant higher than that of the traditional alumina film, and can be applied to various high energy density and high voltage capacitors. Compared with the prior art, the preparation process of the invention is simple, the film is compact and uniform, and the dielectric properties are excellent.
Owner:TONGJI UNIV
Gating tube material, gating tube unit and manufacturing method thereof
The invention relates to the technical field of micro-nano electronics, and discloses a gating tube material which is a compound containing germanium sulfide (GeS) and arsenic telluride (As2Te3). Thegeneral chemical formula of the gating tube material is (GeS)1-X(As2Te3)X, wherein X is the proportion of the compound, and X is larger than 0 and smaller than or equal to 0.5. The gating tube material provided by the invention has the characteristic of small turn-on voltage.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant
ActiveCN103663564AReduce volatilityImprove insulation performanceIron compoundsCooking & bakingDielectric
The invention provides a Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with a high dielectric constant, and a preparation method for the Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with the high dielectric constant. The film adopts a rhombohedral structure and has high homogeneity, the remanent polarization ranges from 59.3 [mu]C / cm<2> to 95.2 [mu]C / cm<2>, the coercive field ranges from 280 kV / cm to 368 kV / cm, and the high dielectric constant ranges from 239.2 to 348.57. The preparation method includes the following steps: bismuth nitrate, ferric nitrate, dysprosium nitrate and manganese acetate are dissolved in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, so as to obtain a precursor; a substrate is spin-coated with the precursor; glue evening and baking are carried out in sequence to obtain a dry film; the dry film is annealed to obtain a Bi0.90Dy0.10Fe1-XMnxO3 film; the procedures of precursor spin-coating, baking and annealing are repeated until a required film thickness is reached, so that the film is obtained. The ferroelectric film has the advantages of simple equipment requirements and high controllability of the doping amount; the dielectric properties of a BiFeO3 (bismuth ferrite) film can be greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH
La, Er, Co and Mn co-doped BFO film with resistance switching effect and preparation method of film
The invention discloses a La, Er, Co and Mn co-doped BFO film with a resistance switching effect and a preparation method of the film. The chemical formula of the film is Bi0.9-xLaxEr0.1Fe0.96Co0.02Mn0.02O3, x=0.01-0.09, the film is of a twisted rhombic perovskite structure, a space group is R3c, and the film grows along a (101) direction. The film is prepared by a sol-gel method through a layer-by-layer annealing process, a preparation method is simple, reaction is easy, technology process temperature is low, and a preparation process is easily controlled. According to the A-site rare earth ion and B-site magnetic transition metal ion co-doped BiFeO3 film, a middle transition layer is formed an interface of the film and an electrode film, kinds and quantity of an oxygen vacancy at a BiFeO3 film interface are changed along with mixing of La ions in the BiFeO3 film, and the film has the resistance switching effect.
Owner:SHAANXI UNIV OF SCI & TECH
Bi(1-x)DyxFeO3 low leakage current film and preparation method thereof
ActiveCN103693694AGood uniformityReduce leakage current densityIron compoundsChemistryElectric field
The invention discloses a Bi(1-x)DyxFeO3 low leakage current film and a preparation method thereof. X is 0.09-0.12, the film is of a rhombohedral structure and good in uniformity, a space point group is R-3m(166), and the leakage current density is 1.01*10<-8> to 6.39*10<-9> A / cm<2> under the electric field of 117kV / cm. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and dysprosium nitrate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic anhydride in a mixing manner according to the molar ratio of (1.05-x):1:x, so as to obtain a precursor solution; spinning a substrate by the precursor solution, baking to obtain a dry film after spinning, and then annealing to obtain a Bi(1-x)DyxFeO3 film; repeatedly spinning the precursor solution, baking and annealing to the required film thickness, so as to obtain the Bi(1-x)DyxFeO3 low leakage current film. The film is simple in demands on equipment, and doping amount is easy to control, and the leakage current density of the Bi(1-x)DyxFeO3 film can be greatly reduced.
Owner:SHAANXI UNIV OF SCI & TECH
Bismuth ferrite-lead titanate-titanium stannate ternary system high-temperature piezoelectric ceramic material and preparation method thereof
ActiveCN111333413BPolarization reduction treatmentGood for PolarizationPiezoelectric/electrostrictive/magnetostrictive devicesChemical compositionBarium titanate
The invention discloses a bismuth ferrite-lead titanate-titanium stannate ternary system high-temperature piezoelectric ceramic material and a preparation method thereof. The chemical composition of the bismuth ferrite-lead titanate-titanium stannate ternary system high-temperature piezoelectric ceramic material is (1-x-y) BiFeO 3 ‑xPbTiO 3 ‑yBa(Sn 1 / 5 Ti 4 / 5 )O 3 +zMnCO 3 ; Wherein, x and y are the molar ratio, 0.20≤x≤0.26, 0.13≤y≤0.18; z is the weight ratio, based on the total weight of the powder when synthesizing the ceramic material, 0≤z≤0.15wt%.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
A bi1-xdyxfeo3 low-leakage current film and its preparation method
ActiveCN103693694BImprove insulation performanceReduce generationIron compoundsAcetic anhydrideAcetic oxide
The invention discloses a Bi(1-x)DyxFeO3 low leakage current film and a preparation method thereof. X is 0.09-0.12, the film is of a rhombohedral structure and good in uniformity, a space point group is R-3m(166), and the leakage current density is 1.01*10<-8> to 6.39*10<-9> A / cm<2> under the electric field of 117kV / cm. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and dysprosium nitrate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic anhydride in a mixing manner according to the molar ratio of (1.05-x):1:x, so as to obtain a precursor solution; spinning a substrate by the precursor solution, baking to obtain a dry film after spinning, and then annealing to obtain a Bi(1-x)DyxFeO3 film; repeatedly spinning the precursor solution, baking and annealing to the required film thickness, so as to obtain the Bi(1-x)DyxFeO3 low leakage current film. The film is simple in demands on equipment, and doping amount is easy to control, and the leakage current density of the Bi(1-x)DyxFeO3 film can be greatly reduced.
Owner:SHAANXI UNIV OF SCI & TECH
Alumina-based dielectric film for high energy storage density capacitor and preparation method thereof
InactiveCN106887331BImprove pressure resistanceReduce leakage conductanceThin/thick film capacitorFixed capacitor dielectricDielectricState of art
The invention relates to an alumina based dielectric film for high energy storage density capacitor and a preparation method. The chemical composition is Al2Bi2-xSiyOz, where: x = 0.005 - 0.1, y = 0.02, the sol-gel method is used to produce the alumina-based dielectric film. Compared with the prior art, the alumina-based dielectric film prepared by the invention has the breakdown voltage between 80V and 200V, the leakage conductance less than 1[mu]A before breakdown, and the dielectric constant higher than that of the traditional alumina film, and can be applied to various high energy density and high voltage capacitors. Compared with the prior art, the preparation process of the invention is simple, the film is compact and uniform, and the dielectric properties are excellent.
Owner:TONGJI UNIV
Bismuth sodium titanate base and barium titanate base multilayer composite piezoelectric film and preparation method thereof
InactiveCN104045340BOvercome harmHigh electrostrain characteristicsPiezoelectric/electrostrictive device manufacture/assemblyMicro actuatorBarium titanate
The invention relates to a sodium bismuth titanate-based and barium titanate-based multi-layer composite piezoelectric film, in which the general chemical formula of the sodium bismuth titanate-based material is Bi1 / 2Na1 / 2TiO3-xBaTiO3-ySrTiO3 (BNT-BT-ST), The general chemical formula of barium titanate-based material is Ba(1-x)CaxTi(1-y)SnyO3(BCTS). The multilayer structure is prepared by spin coating on Pt / Ti / SiO2 / Si substrate using sol-gel method. Composite lead-free piezoelectric film. Compared with the existing technology, the present invention obtains a high-performance sodium bismuth titanate-based and barium titanate-based multi-layer composite lead-free piezoelectric film with high voltage electrical activity, low loss and low leakage conduction, which can be used in micro actuators and drivers. The field has very good practical prospects.
Owner:TONGJI UNIV
Method for preparing barium stan-titanate ferroelectric film
InactiveCN100586582CLow priceEasy to buyPiezoelectric/electrostrictive device manufacture/assemblyPretreated surfacesStrontium titanateFerroelectric thin films
A process for preparing the non-Pb ferroelectric Ba(Ti, Sn)O3 film features that its Sn source is the Tin dibutyloxide ((CC4H9)2SnO) with low cost and comparable performance, the size of its crystal grain can be regulated in a larger range, and it has low leakage and high voltage resistance.
Owner:TONGJI UNIV
A bi1-xhoxfeo3 ferroelectric thin film with high dielectric constant and preparation method thereof
Owner:SHAANXI UNIV OF SCI & TECH
A bi1-xdyxfeo3 film with high dielectric constant and preparation method thereof
ActiveCN103723771BImprove insulation performanceAccurate chemical compositionIron compoundsAcetic anhydrideDysprosium nitrate
The invention relates to a high-dielectric-constant Bi[1-x]DyxFeO3 film (x=0.06-0.08) and a preparation method thereof. The film is in a rhombohedral structure and has favorable uniformity; the space point group is R-3m(166); and under the frequency of 1kHz, the dielectric constant is 152.8-241.6. The preparation method comprises the following steps: dissolving bismuth nitrate, iron nitrate and dysprosium nitrate in an ethylene glycol monomethyl ether-acetic anhydride mixed solution in a mole ratio of (1.05-x):1:x to obtain a precursor solution; evenly spin-coating the precursor solution on a substrate, baking to obtain a dry film, and annealing to obtain a Bi[1-x]DyxFeO3 film; and spin-coating the precursor solution again, baking and annealing to the required film thickness, thereby obtaining the high-dielectric-constant Bi[1-x]DyxFeO3 film. The method has the advantages of simple facility request and controllable doping amount, and can greatly enhance the dielectric properties of the BiFeO3 film.
Owner:SHAANXI UNIV OF SCI & TECH
A kind of bifeo3 thin film with ternary co-doping of tb, cr and mn with high remnant polarization and its preparation method
ActiveCN103626237BReduce generationImprove insulation performanceIron compoundsMANGANESE ACETATEAcetic anhydride
The invention discloses a Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, chromic nitrate and manganese acetate according to a molar ratio of (0.91-0.97):(0.98-x):(0.08-0.14):0.02:x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride and uniformly stirring, thus obtaining a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.04; spin coating the BiFeO3 precursor solution on an FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline-state BiFeO3 film; and after the crystalline-state BiFeO3 film is cooled, repeating the operations until the BiFeO3 film reaches the needed thickness, thus obtaining the Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH
Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and preparation method thereof
ActiveCN103626237AReduce generationImprove insulation performanceIron compoundsMANGANESE ACETATEAcetic anhydride
The invention discloses a Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, chromic nitrate and manganese acetate according to a molar ratio of (0.91-0.97):(0.98-x):(0.08-0.14):0.02:x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride and uniformly stirring, thus obtaining a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.04; spin coating the BiFeO3 precursor solution on an FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline-state BiFeO3 film; and after the crystalline-state BiFeO3 film is cooled, repeating the operations until the BiFeO3 film reaches the needed thickness, thus obtaining the Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH
Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof
ActiveCN103601250BReduce generationImprove insulation performanceIron compoundsNitrateAcetic anhydride
The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO / glass substrate by way of spin coating, baking and annealing the FTO / glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.
Owner:盐城市鹤业实业投资有限公司
A kind of bi0.92dy0.08fe1-xmnxo3 ferroelectric film with low coercive field and its preparation method
ActiveCN103771527BReduce volatilityImprove insulation performanceIron compoundsCooking & bakingDielectric
The invention discloses a Bi0.92Dy0.08Fe(1-x)MnxO3 ferroelectric film with a low coercive field and a preparation method of the film. In Bi0.92Dy0.08Fe(1-x)MnxO3, x is 0.01-0.05; the film is of a rhombohedral structure and is good in uniformity; the residual polarization intensity is 58.27-69.87 muC / cm<2>; the coercive field is 318-448kV / cm; the dielectric constant is 214.4-260.6. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, dysprosium nitrate and manganese acetate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic oxide in a mixing manner, so as to obtain a precursor solution; spinning the precursor solution on a substrate; baking after spinning to obtain a dry film; annealing to obtain the Bi0.92Dy0.08Fe(1-x)MnxO3 film; repeatedly spinning the precursor solution, baking and annealing to achieve the required film thickness, so as to obtain the film. According to the invention, equipment requirements are simple, doping content is easy to control, and the ferroelectric properties of the BiFeO3 film can be greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH
Preparation method of bi0.92tb0.08fe1-xcrxo3 film with low leakage current
ActiveCN102976764BImprove multiferroic propertiesImprove electrical performancePolymer scienceAcetic anhydride
The invention provides a preparation method of a low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and chromic nitrate at a molar ratio of 0.97:(1-x):0.08:x into the mixed solution of ethylene glycol monomethyl ether and acetic anhydride to form a mixed solution; adding ethanolamine into the mixed solution to adjust the viscosity and the complexing degree to obtain a stable BiFeO3 precursor liquid; and preparing a Tb and Cr co-doped crystalline BiFeO3 film by a spin-coating method and layer-by-layer annealing technology. The film is a crystalline Bi0.92Tb0.08Fe0.99Cr0.01O3 film, wherein the leakage current density is still kept below 10<-4>A / cm<2> in a 150kv / cm test electric field. According to the method provided by the invention, the requirements on equipment are simple, the experimental conditions are easy to realize, the prepared film has good uniformity, and the leakage current of the film is reduced through the co-doping of Tb and Cr.
Owner:SHAANXI UNIV OF SCI & TECH
Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant
ActiveCN103663564BReduce volatilityImprove insulation performanceIron compoundsDielectricCooking & baking
Owner:SHAANXI UNIV OF SCI & TECH
Tb, Mn and Ni ternary co-doped low leakage current BiFeO3 film and preparation method thereof
ActiveCN103601248BImprove insulation performanceReduce volatilityIron compoundsMANGANESE ACETATEDielectric
The invention discloses a Tb, Mn and Ni ternary co-doped low leakage current BiFeO3 film and a preparation method thereof. The preparation method of the Tb, Mn and Ni ternary co-doped low leakage current BiFeO3 film comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, manganese acetate and nickel acetate in a molar ratio of (0.91-0.97): (0.96-x): (0.08-0.14): 0.04:x in mixed liquor formed by mixing ethylene glycol methyl ether and acetic anhydride, then uniformly stirring to obtain BiFeO3 precursor liquor, wherein x is equal to 0.01-0.02; coating the BiFeO3 precursor liquor on an FTO (Fluorine-doped Tin Oxide) / glass substrate in a rotary manner to prepare a wet film, roasting the wet film to obtain a dry film, then, annealing for 8 minutes-13 minutes at 550 DEG C to obtain a crystalline-state BiFeO3 film; after the crystalline-state BiFeO3 film is cooled, repeating the annealing, so that the crystalline-state BiFeO3 film reaches needed thickness to obtain the Tb, Mn and Ni ternary co-doped low leakage current BiFeO3 film. The preparation method disclosed by the invention is simple in device requirement, suitable for preparing the film on a large surface and the surface with an irregular shape; moreover, chemical components are precise and controllable, electrical performance of the film can be improved, leakage current density of the BiFeO3 under 350 kV / cm test electric fields is kept below 10<-5>A / cm<2>, and dielectric constant under test frequency of 100 kHz is 240-270.
Owner:盐城市鹤业实业投资有限公司
Bi0.90Ho0.10Fe1-XMnXO3 ferroelectric film with high remanent polarization and preparation method thereof
ActiveCN103708562BImprove insulation performanceReduce generationIron compoundsAcetic acidMANGANESE ACETATE
The invention relates to a Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and a preparation method thereof, wherein x is equal to 0.01-0.05, and the film is of a distorted perovskite structure, has a diamond crystal system and has good uniformity, remanent polarization of 78-108 muC / cm<2>, and a dielectric constant of 196.2-271.8. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate, holmium nitrate and manganese acetate in a mixture prepared by mixing ethylene glycol monomethyl ether and acetic anhydride to obtain a precursor solution; spin-coating the precursor solution on a substrate, coating glue evenly, then baking to obtain a dry film, then annealing to obtain a Bi0.90Ho0.10Fe1-xMnXO3 film, and repeatedly spin-coating the precursor solution, baking and annealing to achieve the required film thickness to obtain the film. According to the Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and the preparation method thereof, the requirements for equipment are simple, the doping amount is easy to control, and the ferroelectric properties of the BiFeO3 film can be greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH
High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof
ActiveCN103723770BReduce volatilityImprove insulation performanceIron compoundsMANGANESE ACETATEAcetic anhydride
The invention relates to a high-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film (x=0.01-0.05) and a preparation method thereof. The film is in a distorted perovskite structure belonging to a rhombohedral system, and has favorable uniformity; and the remanent polarization is 88-116 mu C / cm<2>, and the dielectric constant is 223.1-327.3. The preparation method comprises the following steps: dissolving bismuth nitrate, iron nitrate, holmium nitrate and manganese acetate in an ethylene glycol monomethyl ether-acetic anhydride mixed solution to obtain a precursor solution; evenly spin-coating the precursor solution on a substrate, baking to obtain a dry film, and annealing to obtain a Bi0.92Ho0.08Fe[1-x]MnxO3 film; and spin-coating the precursor solution again, baking and annealing to the required film thickness, thereby obtaining the film. The method has the advantages of simple facility request and controllable doping amount, and can greatly enhance the dielectric properties of the BiFeO3 film.
![High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof](https://images-eureka.patsnap.com/patent_img/baf0b142-3167-4f32-99e9-26717fd6a579/HDA0000443418850000011.PNG "High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof")
![High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof](https://images-eureka.patsnap.com/patent_img/baf0b142-3167-4f32-99e9-26717fd6a579/HDA0000443418850000012.PNG "High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof")
![High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof](https://images-eureka.patsnap.com/patent_img/baf0b142-3167-4f32-99e9-26717fd6a579/HDA0000443418850000021.PNG "High-dielectric-constant Bi0.92Ho0.08Fe[1-x]MnxO3 ferroelectric film and preparation method thereof")
Owner:SHAANXI UNIV OF SCI & TECH
Solid dielectric thin film capacitor with low leakage conductance and high voltage resistance and preparation method thereof
ActiveCN113410055ALow costSimple preparation processThin/thick film capacitorFixed capacitor dielectricLow leakageDielectric thin films
The invention relates to the technical field of capacitor preparation methods, in particular to a low-leakage-conductance high-voltage-withstanding solid dielectric thin film capacitor. The method comprises a shell and a capacitor unit packaged in the shell, and the capacitor unit comprises an upper electrode, an oxide dielectric thin film and a substrate which are sequentially arranged from top to bottom; and a layer of crystallized oxide is arranged on the surface of the oxide dielectric film. The invention further discloses a preparation method of the low-leakage-conductance and high-voltage-withstanding solid dielectric thin film capacitor. According to the invention, the surface of the selected aluminum oxide compound is subjected to crystallization treatment and simple treatment, so the same film has two different structures, and the leakage current and the breakdown field strength of the aluminum oxide dielectric film are effectively improved.
Owner:JIAXING UNIV
A kind of tb and mn co-doped bifeo3 thin film with high remnant polarization and its preparation method
ActiveCN103613145BReduce generationImprove insulation performanceIron compoundsMANGANESE ACETATEAcetic anhydride
The invention relates to a Tb and Mn codoped high remanent polarization BiFeO3 film and a preparation method, the method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and manganese acetate according to mol ratio of (0.91-0.97): (1-x): (0.08-0.14): x in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, then uniformly stirring to obtain a BiFeO3 precursor liquid; X is 0.01-0.05; performing spin coating of the BiFeO3 precursor liquid on a FTO / glass substrate to prepare a wet membrane, baking the wet membrane to obtain a dry membrane, then annealing at 550 DEG C to obtain the crystalline state BiFeO3 film; cooling the crystalline state BiFeO3 film, and repeatedly making the crystalline state BiFeO3 film to reach a required thickness to obtain the Tb and Mn codoped high remanent polarization BiFeO3 film. According to the invention, a sol gel technology is employed, the equipment requirement is simple, the film is prepared on a large surface and surfaces with irregular shapes, the chemical component is accurate and controllable, and the ferroelectric performance of the film is greatly increased, and the saturation remanent polarization of the Tb and Mn codoped BiFeO3 film can be increased to more than 100 mumC / cm<2>.
Owner:盐城市鹤业实业投资有限公司
Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method
InactiveCN100376506CHigh dielectric constantReduce leakage conductanceElectricityBarium strontium titanate
The invention belongs to the area of ferro-electricity film of compositional gradient without lead and its the preparing method by chemical method. The Ba(Ti,Zr or Sn)O3 ferro-electricity film of compositional gradient introduced in the invention includes Ba(Ti1-x,Zr or Snx)O3, wherein X is 0-0.70. Gradient film Ba(Zr,Ti)O3(BZT) and Ba(Ti,Sn)O3(BTS) referred to the invention belong to non-lead system, that will not arise the pollution of lead in the preparing process, especially in the integration with Si process, and adjust the temperature broad. The material compared with barium strontium titanates in the structure characterizes in: Ba(Zr,Ti)O3(BZT) and Ba(Ti,Sn)O3(BTS) materials belong to beta-position substitution in ABO3 perovskite structure, its crystal size can be adjusted in a large range; in the property characterizes in: decreasing leakage conductance for film material, improving compressional resistance and broadening the applied range of gradient film. The Ba(Ti,Zr or Sn)O3 ferro-electricity film with compositional gradient introduced in the invention has larger dielectric constant and improved temperature character compared with BZT and BTS ferro-electricity film with the components distributing evenly along the thickness.
Owner:TONGJI UNIV
A kind of tb, mn and cu ternary co-doped bifeo3 film with low leakage current and preparation method thereof
The invention relates to a Tb, Mn and Cu three-element codoped low leakage current BiFeO3 film and a preparation method. the method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, manganese acetate and cupric nitrate according to mol ratio of (0.91-0.97): (0.96-x): (0.08-0.14): 0.04: x in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, then uniformly stirring to obtain a BiFeO3 precursor; wherein total metal ion concentration of the BiFeO3 precursor is 0.1-0.5mol / L, X is 0.01-0.03; performing spin coating of the BiFeO3 precursor on a FTO / glass substrate to prepare a wet membrane, baking the wet membrane to obtain a dry membrane, then annealing at 550 DEG C for 8-13 minutes to obtain the crystalline state BiFeO3 film, cooling the crystalline state BiFeO3 film, and repeatedly making the crystalline state BiFeO3 film to reach a required thickness to obtain the Tb, Mn and Cu three-element codoped low leakage current BiFeO3 film. According to the invention, a sol gel technology is employed, the equipment requirement is simple, the film is prepared on large surface and surfaces with irregular shapes, the chemical component is accurate and controllable, and the regulation and control to its crystal structure can be carried out by codoping thereby the ferroelectric performance of the film is greatly increased.
Owner:SHAANXI UNIV OF SCI & TECH
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