Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant

A bi0.90dy0.10fe1-xmnxo3, high dielectric constant technology, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problems of weak magnetism, large coercive field, high film leakage current, etc., to achieve volatile The effect of reducing the amount, reducing the leakage conduction, and reducing the leakage current

Active Publication Date: 2015-07-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, BiFeO prepared by metal-organic decomposition method 3 The leakage current of the film is high, the coercive field is large, the magnetism is weak, and the saturated P-E hysteresis loop can only be observed when the thickness is greater than 400nm

Method used

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  • Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant
  • Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant
  • Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0035] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.90 Dy 0.10 Fe 0.99 mn 0.01 o 3 film;

[0036] Step 3: ...

Embodiment 2

[0039] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0040] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.90 Dy 0.10 Fe 0.98 mn 0.02 o 3 film;

[0041] Step 3: ...

Embodiment 3

[0044] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0045] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.90 Dy 0.10 Fe 0.97 mn 0.03 o 3 film;

[0046] Step 3: ...

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Abstract

The invention provides a Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with a high dielectric constant, and a preparation method for the Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with the high dielectric constant. The film adopts a rhombohedral structure and has high homogeneity, the remanent polarization ranges from 59.3 [mu]C / cm<2> to 95.2 [mu]C / cm<2>, the coercive field ranges from 280 kV / cm to 368 kV / cm, and the high dielectric constant ranges from 239.2 to 348.57. The preparation method includes the following steps: bismuth nitrate, ferric nitrate, dysprosium nitrate and manganese acetate are dissolved in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, so as to obtain a precursor; a substrate is spin-coated with the precursor; glue evening and baking are carried out in sequence to obtain a dry film; the dry film is annealed to obtain a Bi0.90Dy0.10Fe1-XMnxO3 film; the procedures of precursor spin-coating, baking and annealing are repeated until a required film thickness is reached, so that the film is obtained. The ferroelectric film has the advantages of simple equipment requirements and high controllability of the doping amount; the dielectric properties of a BiFeO3 (bismuth ferrite) film can be greatly improved.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a high dielectric constant Bi 0.90 Dy 0.10 Fe 1-x mn x o 3 Ferroelectric thin film and its preparation method. Background technique [0002] BiFeO 3 It is currently the only ferroelectric that has both ferroelectricity and G-type-weak ferromagnetism at room temperature, and has a high ferroelectric Curie temperature (T C ~1023K) and antiferromagnetic Neel temperature (T N ~643K). The coexistence of magnetism and ferroelectricity in BFO makes the multiferroic material not only can be used as a single ferroelectric material or magnetic material, but also the coupling effect of magnetism and electricity in the material makes the electric field in the material can induce magnetization, and the magnetic field can induce polarization. This feature has an attractive application prospect in the new memory element of magnetic reading and writing. For example, a magnetoelectri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强晏霞
Owner SHAANXI UNIV OF SCI & TECH
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