Bi0.92Dy0.08Fe(1-x)MnxO3 ferroelectric film with low coercive field and preparation method of film
A ferroelectric thin film and coercive field technology is applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc. It can solve the problems of high leakage current, weak magnetism, and large coercive field of thin films, and achieve improved ferroelectric properties and Good dielectric properties and uniformity
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0030] Example 1
[0031] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;
[0032] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.92 Dy 0.08 Fe 0.99 mn 0.01 o 3 film...
Example Embodiment
[0035] Example 2
[0036] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;
[0037]Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.92 Dy 0.08 Fe 0.98 mn 0.02 o 3 film;...
Example Embodiment
[0040] Example 3
[0041] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;
[0042] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.92 Dy 0.08 Fe 0.97 mn 0.03 o 3 film...
PUM
Property | Measurement | Unit |
---|---|---|
Polarization | aaaaa | aaaaa |
Coercive field | aaaaa | aaaaa |
Grain size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com