Alumina based dielectric film for high energy storage density capacitor and preparation method

A technology of high energy storage density and dielectric thin film, which is applied in the direction of fixed capacitor dielectric, capacitor, fixed capacitor, etc., can solve the problems affecting the electrical performance of capacitors, and achieve the effects of easy mass production, short time period and simple preparation process

Inactive Publication Date: 2017-06-23
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the manufacture and use of capacitors, various defects will inevitably appear in the dielectric film, and the existe

Method used

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  • Alumina based dielectric film for high energy storage density capacitor and preparation method
  • Alumina based dielectric film for high energy storage density capacitor and preparation method
  • Alumina based dielectric film for high energy storage density capacitor and preparation method

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0029] Example 1

[0030] Fabrication of 210nm-thick alumina-based thin films:

[0031] The steps for making an alumina-based thin film are as follows:

[0032] A 210nm hydrated alumina dielectric film was prepared on the surface of the Pt-plated silicon wafer by spin coating, and the following process steps were used:

[0033] First grind 0.02mol aluminum isopropoxide, then add 50ml ethylene glycol ether to ultrasonic for 10min, stir at 70°C for 30min; add 0.005mol bismuth nitrate pentahydrate, stir at 70°C for 30min; add 0.02mol ethyl orthosilicate, Stir at 70°C for 30 minutes; 0.02mol acetylacetone, continue stirring for 30 minutes; finally add 10ml of glacial acetic acid, stir at 90°C for 30 minutes, gradually cool to room temperature, and finally filter to obtain 60ml of sol precursor. Thermal analysis of the prepared colloids, data such as figure 1 shown. The crystallization temperature of the sample is 924°C, indicating high structural stability. The Pt-plated sili...

Example Embodiment

[0037] Example 2

[0038] Fabrication of 210nm-thick alumina-based thin films:

[0039] The steps for making an alumina-based thin film are as follows:

[0040] A 210nm hydrated alumina dielectric film was prepared on the surface of the Pt-coated silicon wafer by spin coating, as follows:

[0041] First grind 0.04mol of aluminum isopropoxide, then add 100ml of ethylene glycol ether to ultrasonic for 10min, stir at 70°C for 30min; add 0.01mol bismuth nitrate pentahydrate, stir at 70°C for 30min; add 0.04mol ethyl orthosilicate, Stir at 70°C for 30 minutes; 0.04mol acetylacetone, continue stirring for 30 minutes; finally add 20ml of glacial acetic acid, stir at 90°C for 30 minutes, gradually cool to room temperature, and finally filter to obtain 120ml of sol precursor.

[0042] A thin film was obtained by spun colloid heat treatment, and an aluminum film of 120 nm was plated on the surface of the obtained thin film for testing the breakdown field strength and leakage conductan...

Example Embodiment

[0043] Example 3

[0044] Fabrication of 270nm-thick alumina-based thin films:

[0045] The steps for making an alumina-based thin film are as follows:

[0046] A 270 nm hydrated alumina dielectric film was prepared on the surface of the Pt-coated silicon wafer by spin coating. details as follows:

[0047] 1) The preparation of alumina-based colloid is the same as in Example 2

[0048] 2) Preparation of alumina-based thin films:

[0049] The film preparation steps are as follows:

[0050]The Pt-plated silicon wafer sample with clean and dry surface was placed on a glue spinner, and then the sol precursor was dropped on the surface of the substrate, and the sol was uniformly coated on the surface of the substrate at a speed of 3000 rpm, and then the sample was placed on the surface of the substrate. The rapid heat treatment furnace performs drying heat treatment. The process conditions of the pre-drying treatment are 150 ° C for 2 minutes, 350 ° C for 2 minutes, and 450 ° ...

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Abstract

The invention relates to an alumina based dielectric film for high energy storage density capacitor and a preparation method. The chemical composition is Al2Bi2-xSiyOz, where: x = 0.005 - 0.1, y = 0.02, the sol-gel method is used to produce the alumina-based dielectric film. Compared with the prior art, the alumina-based dielectric film prepared by the invention has the breakdown voltage between 80V and 200V, the leakage conductance less than 1[mu]A before breakdown, and the dielectric constant higher than that of the traditional alumina film, and can be applied to various high energy density and high voltage capacitors. Compared with the prior art, the preparation process of the invention is simple, the film is compact and uniform, and the dielectric properties are excellent.

Description

technical field [0001] The invention belongs to the technical field of film materials and preparation methods thereof, and in particular relates to an alumina-based dielectric film with high withstand voltage and low leakage conductance, which can be used for high-voltage, high-energy-storage-density solid-state dielectric capacitors. Background technique [0002] In today's world, environmental pollution and energy crisis have become the top threats to human survival and development. How to solve this problem is a challenge that all mankind must face together. On the one hand, it has become a consensus to adjust the energy structure and continuously increase the development and utilization of green and renewable new energy. On the other hand, adopting new technologies and new processes to continuously improve energy utilization efficiency and alleviate the contradiction between energy supply and demand is also a problem that cannot be ignored. Especially for those renewabl...

Claims

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Application Information

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IPC IPC(8): H01G4/10H01G4/33H01G4/00
CPCH01G4/00H01G4/10H01G4/33
Inventor 姚曼文苏振李菲彭勇陈建文姚熹
Owner TONGJI UNIV
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