A kind of tb, mn and cu ternary co-doped bifeo3 film with low leakage current and preparation method thereof

A leakage current and co-doping technology, which is applied in the field of low leakage current BiFeO3 film and its preparation, can solve the problems of limited application, low dielectric constant, large leakage current, etc., to improve multiferroic performance, reduce leakage current, The effect of enhancing insulation

Active Publication Date: 2015-07-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Fluctuations in the valence state of Fe lead to a large leakage conductance, making BiFeO 3 The leakage current is large, and due to the large leakage conduction, the ferroelectricity cannot be measured correctly and saturation polarization is obtained
On the other hand, BiFeO 3 The properties of low dielectric constant and low resistivity make it difficult to observe the hysteresis loop
These characteristics greatly limit its application

Method used

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  • A kind of tb, mn and cu ternary co-doped bifeo3 film with low leakage current and preparation method thereof
  • A kind of tb, mn and cu ternary co-doped bifeo3 film with low leakage current and preparation method thereof
  • A kind of tb, mn and cu ternary co-doped bifeo3 film with low leakage current and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O, C 4 H 6 MnO 4 ·4H 2 O and Cu (NO 3 ) 2 ·3H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.94:0.95:0.11:0.04:0.01, and then stirred for 2h to make it uniform to obtain BiFeO 3 Precursor fluid; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0025] 2) The BiFeO 3 The precursor liquid is allowed to stand for 24 hours, and then BiFeO is spin-coated on the FTO / glass substrate 3 The precursor solution prepares the wet film. The wet film is baked at 200°C for 12 minutes to obtain a dry film, and then fast annealed at 550°C for 8 minutes to obtain crystalline BiFeO 3 film;

[0026] 3) BiFeO to be crystalline 3 After the film is cooled, repeat step 2) to make the crystalline BiFeO 3 Reach the required thickness, tha...

Embodiment 2

[0028] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O, C 4 H 6 MnO 4 ·4H 2 O and Cu (NO 3 ) 2 ·3H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.94:0.94:0.11:0.04:0.02, and then stirred for 2h to make it uniform to obtain BiFeO 3 Precursor fluid; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0029] 2) The BiFeO 3 The precursor liquid is allowed to stand for 32 hours, and then BiFeO is spin-coated on the FTO / glass substrate 3 The precursor solution prepares a wet film. The wet film is baked at 200°C for 6 minutes to obtain a dry film, and then rapidly annealed at 550°C for 13 minutes to obtain crystalline BiFeO 3 film.

[0030] 3) BiFeO to be crystalline 3 After the film is cooled, repeat step 2) to make the crystalline BiFeO 3 Reach the required thickness, th...

Embodiment 3

[0037] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O, C 4 H 6 MnO 4 ·4H 2 O and Cu (NO 3 ) 2 ·3H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.91:0.95:0.14:0.04:0.01, and then stirred for 2h to make it uniform to obtain BiFeO 3 Precursor fluid; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.1 mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 1:1;

[0038] 2) The BiFeO 3 The precursor liquid is allowed to stand for 30 hours, and then BiFeO is spin-coated on the FTO / glass substrate 3 The precursor solution prepares the wet film. The wet film is baked at 260°C for 8 minutes to obtain a dry film, and then fast annealed at 550°C for 10 minutes to obtain crystalline BiFeO 3 film;

[0039] 3) BiFeO to be crystalline 3 After the film is cooled, repeat step 2) to make the crystalline BiFeO 3 Reach the required thickness, th...

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Abstract

The invention relates to a Tb, Mn and Cu three-element codoped low leakage current BiFeO3 film and a preparation method. the method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, manganese acetate and cupric nitrate according to mol ratio of (0.91-0.97): (0.96-x): (0.08-0.14): 0.04: x in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, then uniformly stirring to obtain a BiFeO3 precursor; wherein total metal ion concentration of the BiFeO3 precursor is 0.1-0.5mol / L, X is 0.01-0.03; performing spin coating of the BiFeO3 precursor on a FTO / glass substrate to prepare a wet membrane, baking the wet membrane to obtain a dry membrane, then annealing at 550 DEG C for 8-13 minutes to obtain the crystalline state BiFeO3 film, cooling the crystalline state BiFeO3 film, and repeatedly making the crystalline state BiFeO3 film to reach a required thickness to obtain the Tb, Mn and Cu three-element codoped low leakage current BiFeO3 film. According to the invention, a sol gel technology is employed, the equipment requirement is simple, the film is prepared on large surface and surfaces with irregular shapes, the chemical component is accurate and controllable, and the regulation and control to its crystal structure can be carried out by codoping thereby the ferroelectric performance of the film is greatly increased.

Description

Technical field [0001] The invention belongs to the field of functional materials, and specifically relates to a low leakage current BiFeO co-doped with Tb, Mn and Cu 3 Film and its preparation method. Background technique [0002] In recent years, BiFeO 3 The representative multiferroic compound system has formed a worldwide research boom in single-phase multiferroic magnetoelectric materials. It has both ferroelectric order and antiferromagnetic order at room temperature. Due to its high ferroelectric phase transition temperature (T C =1103K) and the magnetic phase transition temperature (T N =643K). Therefore BiFeO 3 It has become an important functional material that can be widely used in the fields of microelectronics, optoelectronics, integrated optics, and microelectronic mechanical systems. [0003] BiFeO 3 The biggest problem with thin films is their low resistivity, which makes it impossible to measure their ferroelectric properties at room temperature. On the one hand,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/26C04B35/624
Inventor 谈国强董国华罗洋洋
Owner SHAANXI UNIV OF SCI & TECH
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