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Solid dielectric thin film capacitor with low leakage conductance and high voltage resistance and preparation method thereof

A film capacitor and dielectric technology, which is applied in the field of low leakage conductance and high withstand voltage solid dielectric film capacitors and their preparation, can solve the problems of difficult and complicated processes, and achieve high energy storage density, simple preparation process and short time period. Effect

Active Publication Date: 2021-09-17
JIAXING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Whether it is doping or stacking, the process is complicated, and there are certain difficulties in the process due to the agglomeration effect of nanoparticles or the compatibility between different oxides.

Method used

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  • Solid dielectric thin film capacitor with low leakage conductance and high voltage resistance and preparation method thereof
  • Solid dielectric thin film capacitor with low leakage conductance and high voltage resistance and preparation method thereof
  • Solid dielectric thin film capacitor with low leakage conductance and high voltage resistance and preparation method thereof

Examples

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Effect test

Embodiment 1

[0032] Such as figure 2 As shown, the present invention discloses a low-leakage conduction and high-voltage-resistant solid-state dielectric film capacitor, which includes a casing and a capacitor unit packaged in the casing, and the capacitor unit includes an upper electrode and an oxide dielectric arranged from top to bottom A film and a substrate, the surface of the oxide dielectric film is a layer of crystallized oxide. The oxide dielectric film is an aluminum oxide compound with a thickness of 210nm and uniform texture. The thickness of the crystallized oxide on the surface of the oxide dielectric thin film is 5nm.

[0033] The upper electrode is a metal electrode with a thickness of 150nm.

[0034] The upper electrode is deposited on the oxide dielectric film.

[0035] Such as figure 1 As shown, a method for preparing a low-leakage conduction high-voltage-resistant solid-state dielectric film capacitor specifically includes the following steps:

[0036] (1) Prepara...

Embodiment 2

[0047] In this example, the dielectric oxide was changed to a 300nm aluminum oxide dielectric film, and the upper electrode was an aluminum electrode.

[0048] Grind 0.02mol of aluminum isopropoxide first, then add 50mL of ethylene glycol ether to sonicate for 10min, stir at 70°C for 30 minutes; add 0.03mol of acetylacetone, stir at 60°C for 30 minutes; add 10mL of acetic acid, and stir at 60°C for 30 minutes. After the reaction was completed, it was gradually cooled to room temperature, and finally filtered to obtain 60 mL of a clear aluminum oxide precursor. Place the Pt with a clean and dry surface on the silicon wafer evenly, place it on a homogenizer, then drop the sol precursor on the surface of the substrate, and evenly coat the sol on the surface of the substrate at a speed of 3000 rpm. Then the sample was placed in a tube furnace for drying and heat treatment. The pre-drying process conditions were 150°C for 2 minutes in air, 350°C for 2 minutes, and 450°C for 2 minut...

Embodiment 3

[0051] In this example, the rigid capacitor is changed into a flexible capacitor, and the upper electrode is prepared as a gold electrode, and the substrate is made of a flexible aluminum foil.

[0052] Grind 0.02mol of aluminum isopropoxide first, then add 60mL of ethylene glycol ether to ultrasonic for 10 minutes, stir at 70°C for 30 minutes; add 0.03mol of acetylacetone, stir at 60°C for 30 minutes; add 10mL of acetic acid, and stir at 60°C for 30 minutes. After the reaction was completed, it was gradually cooled to room temperature, and finally filtered to obtain 60 mL of a clear aluminum oxide precursor. Place the aluminum foil with a clean and dry surface on the silicon wafer, place it on a homogenizer, then drop the sol precursor on the surface of the substrate, and evenly coat the sol on the surface of the substrate at a speed of 3000 rpm. Then put the sample in a tube furnace for drying and heat treatment. The pre-drying process conditions are 150°C for 2 minutes in a...

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Abstract

The invention relates to the technical field of capacitor preparation methods, in particular to a low-leakage-conductance high-voltage-withstanding solid dielectric thin film capacitor. The method comprises a shell and a capacitor unit packaged in the shell, and the capacitor unit comprises an upper electrode, an oxide dielectric thin film and a substrate which are sequentially arranged from top to bottom; and a layer of crystallized oxide is arranged on the surface of the oxide dielectric film. The invention further discloses a preparation method of the low-leakage-conductance and high-voltage-withstanding solid dielectric thin film capacitor. According to the invention, the surface of the selected aluminum oxide compound is subjected to crystallization treatment and simple treatment, so the same film has two different structures, and the leakage current and the breakdown field strength of the aluminum oxide dielectric film are effectively improved.

Description

technical field [0001] The invention relates to the technical field of capacitor preparation methods, and relates to a low-leakage conduction high-voltage-resistant solid-state dielectric film capacitor and a preparation method thereof. Background technique [0002] At present, dielectric energy storage devices with high energy storage density and high efficiency are one of the most basic and critical components in integrated circuits, high-energy pulse power and other equipment. It is widely used in important civilian and national defense equipment such as rail guns and laser weapons. In addition, high stability and high energy storage are equally important as a key indicator to measure the stability and performance of electronic devices. Leakage current is a key parameter of dielectric capacitors. A large leakage current will cause a large loss in the energy storage device and cause heating problems, which will affect the long-term stability of the device. High energy st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01G4/10
CPCH01G4/33H01G4/10
Inventor 苏振李在房宋嘉兴胡林尹新星金英芝
Owner JIAXING UNIV
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