Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method

A gradient distribution, ferroelectric thin film technology, applied in the field of non-lead ferroelectric thin film and its preparation, to achieve the effect of broadening the application range, improving the temperature characteristics, and improving the withstand voltage characteristics

Inactive Publication Date: 2008-03-26
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no Ba(Zr,Ti)O with composition gradient structure 3 (BZT) and Ba(Ti,Sn)O 3 (BTS) ferroelectric thin film

Method used

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  • Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method
  • Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Preparation of Ba(Ti 1-x sn x )O 3 , x=0, 0.05, 0.10 and 0.15 composition gradient ferroelectric thin film:

[0022] The chemical raw material used is barium acetate [Ba(CH 3 COO 2 ], tin acetate [Sn(CH 3 COO) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. Firstly heat barium acetate and tin acetate (according to a certain stoichiometric ratio x=0.10) in glacial acetic acid solution to boiling, stop heating after 10 minutes, and cool to room temperature, the molar ratio of Ba+Sn to glacial acetic acid is 1: 10. Add the mixed solution of titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) into the glacial acetic acid solution containing barium and tin, wherein: the molar ratio of Ti to AcAc is 1:2, titanium isopropoxide and The molar ratio of ethylene glycol ether is 1:10. Finally, ethylene glycol ether was added to adjust the concentration of the final solution to 0.3M. ...

Embodiment 2

[0026] Preparation of Ba(Ti 1-x Zr x )O 3 , x = 0, 0.09, 0.18 and 0.35 composition gradient ferroelectric thin films:

[0027] The chemical raw material used is barium acetate [Ba(CH) 3 COO) 2 ], zirconium isopropoxide [Zr(OC 3 H 7 ) 4 ] and titanium isopropoxide [Ti(OC 3 H 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. First, barium acetate (according to a certain stoichiometric ratio x=0.35) was heated to boiling in the glacial acetic acid solution, stopped heating after 5 minutes, and cooled to room temperature, and the molar ratio of Ba to glacial acetic acid was 1:10. Then add the mixed solution of zirconium isopropoxide and titanium isopropoxide, ethylene glycol ether and acetylacetone (AcAc) into the glacial acetic acid solution containing barium, wherein: the molar ratio of Ti and AcAc is 1:2, (iso The molar ratio of titanium propoxide + zirconium isopropoxide): ethylene glycol ether is 1:10. Finally, ethylene glycol ether was added ...

Embodiment 3

[0031] Preparation of Ba(Ti 1-x Zr x )O 3 , x = 0.15, 0.30, 0.50 and 0.70 composition gradient ferroelectric thin films:

[0032] The configuration method of the adopted chemical raw materials and the precursor solution is the same as that of Example 2. The substrate used is Pt / Ti / SiO 2 / Si. First use the precursor solution of x=0.70 on the substrate LaNiO 3 / Pt / Ti / SiO 2 3 coats on / Si, then 3 coats with x=0.50 precursor solution, 3 coats with x=0.30 precursor solution, and finally 3 coats with x=0.15 precursor solution, In this way, along the direction of film thickness, that is, along the direction from the film surface to the substrate, the content of zirconium gradually increases to form a lower gradient film. Each of the above layers is subjected to a heat treatment at 500°C for 5 minutes. Finally the film was heat treated at 650°C for 1 hour. Then, a gold electrode is sputtered on the upper surface by DC sputtering as the upper electrode, the diameter of which i...

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Abstract

The invention belongs to the area of ferro-electricity film of compositional gradient without lead and its the preparing method by chemical method. The Ba(Ti,Zr or Sn)O3 ferro-electricity film of compositional gradient introduced in the invention includes Ba(Ti1-x,Zr or Snx)O3, wherein X is 0-0.70. Gradient film Ba(Zr,Ti)O3(BZT) and Ba(Ti,Sn)O3(BTS) referred to the invention belong to non-lead system, that will not arise the pollution of lead in the preparing process, especially in the integration with Si process, and adjust the temperature broad. The material compared with barium strontium titanates in the structure characterizes in: Ba(Zr,Ti)O3(BZT) and Ba(Ti,Sn)O3(BTS) materials belong to beta-position substitution in ABO3 perovskite structure, its crystal size can be adjusted in a large range; in the property characterizes in: decreasing leakage conductance for film material, improving compressional resistance and broadening the applied range of gradient film. The Ba(Ti,Zr or Sn)O3 ferro-electricity film with compositional gradient introduced in the invention has larger dielectric constant and improved temperature character compared with BZT and BTS ferro-electricity film with the components distributing evenly along the thickness.

Description

technical field [0001] The invention belongs to the field of preparing a non-lead ferroelectric thin film with component gradient distribution by using a chemical method and a preparation method thereof. Background technique [0002] Generally, near the phase transition point of ferroelectric materials, the dielectric constant changes greatly with the change of temperature, especially near the Curie point. For ferroelectric materials, they often have higher dielectric constant, pyroelectric coefficient and piezoelectric properties near their phase transition point. However, due to its poor temperature characteristics near the phase transition point, its scope of application is limited. For ferroelectric thin film materials, in order to change its temperature characteristics, the prepared (Ba, Sr)TiO 3 The (BST) ferroelectric thin film forms a composition gradient along the thickness, which improves the temperature characteristics of the thin film to a certain extent. Howe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/462C04B35/624
Inventor 翟继卫
Owner TONGJI UNIV
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