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A kind of tb and mn co-doped bifeo3 thin film with high remnant polarization and its preparation method

A polarization strength, high residual technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problem that ferroelectricity cannot be measured correctly in saturation polarization, it is difficult to observe hysteresis loops, and low dielectric Constants and other issues to achieve the effects of reducing the generation of oxygen vacancies, improving electrical properties, and reducing leakage current

Active Publication Date: 2015-10-28
盐城市鹤业实业投资有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluctuations in the valence state of Fe lead to a large leakage conductance, making BiFeO 3 The leakage current is large, and due to the large leakage conduction, the ferroelectricity cannot be measured correctly and saturation polarization is obtained
On the other hand, BiFeO 3 The properties of low dielectric constant and low resistivity make it difficult to observe the hysteresis loop
These characteristics greatly limit its application

Method used

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  • A kind of tb and mn co-doped bifeo3 thin film with high remnant polarization and its preparation method
  • A kind of tb and mn co-doped bifeo3 thin film with high remnant polarization and its preparation method
  • A kind of tb and mn co-doped bifeo3 thin film with high remnant polarization and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.94:0.99:0.11:0.01, and then stirred for 2h to homogenize to obtain stable BiFeO 3 Precursor fluid; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0026] 2) The BiFeO 3 The precursor liquid is allowed to stand for 24 hours, and then BiFeO is spin-coated on the FTO / glass substrate 3 The precursor solution prepares a wet film, and the wet film is baked at 200°C for 5 minutes to obtain a dry film, and then fast annealed at 550°C for 10 minutes to obtain crystalline BiFeO 3 film.

[0027] 3) BiFeO to be crystalline 3 After the film is cooled, repeat step 2) until the crystalline BiFeO 3 When the film reaches the required thickness, Tb and Mn co...

Embodiment 2

[0034] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.94:0.98:0.11:0.02, and then stirred for 2h to homogenize to obtain stable BiFeO 3 Precursor fluid; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0035] 2) The BiFeO 3 The precursor liquid is allowed to stand for 32 hours, and then BiFeO is spin-coated on the FTO / glass substrate 3 The precursor solution prepares a wet film, and the wet film is baked at 200°C for 10 minutes to obtain a dry film, and then quickly annealed at 550°C for 7 minutes to obtain crystalline BiFeO 3 film.

[0036] 3) BiFeO to be crystalline 3 After the film is cooled, repeat step 2) until the crystalline BiFeO 3 When the film reaches the required thickness, Tb and Mn...

Embodiment 3

[0038] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O and C 4 H 6 MnO 4 ·4H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.94:0.97:0.11:0.03, and then stirred for 2h to homogenize to obtain stable BiFeO 3 Precursor fluid; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0039] 2) The BiFeO 3 The precursor liquid is allowed to stand for 28 hours, and then BiFeO is spin-coated on the FTO / glass substrate 3 The precursor solution prepares a wet film. The wet film is baked at 200℃ for 8min to obtain a dry film, and then fast annealed at 550℃ for 12min to obtain crystalline BiFeO 3 film.

[0040] 3) BiFeO to be crystalline 3 After the film is cooled, repeat step 2) until the crystalline BiFeO 3 When the film reaches the required thickness, Tb and Mn co-doped BiFeO wit...

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Abstract

The invention relates to a Tb and Mn codoped high remanent polarization BiFeO3 film and a preparation method, the method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and manganese acetate according to mol ratio of (0.91-0.97): (1-x): (0.08-0.14): x in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, then uniformly stirring to obtain a BiFeO3 precursor liquid; X is 0.01-0.05; performing spin coating of the BiFeO3 precursor liquid on a FTO / glass substrate to prepare a wet membrane, baking the wet membrane to obtain a dry membrane, then annealing at 550 DEG C to obtain the crystalline state BiFeO3 film; cooling the crystalline state BiFeO3 film, and repeatedly making the crystalline state BiFeO3 film to reach a required thickness to obtain the Tb and Mn codoped high remanent polarization BiFeO3 film. According to the invention, a sol gel technology is employed, the equipment requirement is simple, the film is prepared on a large surface and surfaces with irregular shapes, the chemical component is accurate and controllable, and the ferroelectric performance of the film is greatly increased, and the saturation remanent polarization of the Tb and Mn codoped BiFeO3 film can be increased to more than 100 mumC / cm<2>.

Description

Technical field [0001] The invention belongs to the field of functional thin film materials, and specifically relates to a BiFeO co-doped with Tb and Mn with high residual polarization strength 3 Film and its preparation method. Background technique [0002] In recent years, BiFeO 3 The representative multiferroic compound system has formed a worldwide research boom in single-phase multiferroic magnetoelectric materials. It has both ferroelectric order and antiferromagnetic order at room temperature. Due to its high ferroelectric phase transition temperature (T C =1103K) and the magnetic phase transition temperature (T N =643K). Therefore BiFeO 3 It has become an important functional material that can be widely used in the fields of microelectronics, optoelectronics, integrated optics, and microelectronic mechanical systems. [0003] BiFeO 3 The biggest problem with thin films is their low resistivity, which makes it impossible to measure their ferroelectric properties at room tem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强董国华罗洋洋
Owner 盐城市鹤业实业投资有限公司
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