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Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof

A technology of alternating doping and leakage current, which is applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc. Solve the effect of Fe valence, easy doping modification, and reducing leakage current density

Active Publication Date: 2015-06-24
盐城市鹤业实业投资有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluctuations in the valence state of Fe lead to a large leakage conductance, making BiFeO 3 The leakage current is large, and due to the large leakage conduction, the ferroelectricity cannot be measured correctly and saturation polarization is obtained
On the other hand, BiFeO 3 The properties of low dielectric constant and low resistivity make it difficult to observe the electric hysteresis loop. These characteristics greatly limit the performance of BiFeO. 3 Film application

Method used

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  • Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof
  • Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof
  • Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Put Bi(NO 3 ) 3 ·5H 2 O, Fe (NO 3 ) 3 ·9H 2 O and Tb (NO 3 ) 3 ·6H 2 O was dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.94:1:0.11, stirred for 2 h to make it uniform, and the precursor solution A was obtained; 3 ) 3 ·5H 2 O, Fe (NO 3 ) 3 ·9H 2 O and Sm (NO 3 ) 3 ·6H 2O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.91:1:0.14, and stirred for 2 hours to make it uniform to obtain precursor solution B; wherein, the total metal ions in precursor solution A and precursor solution B are The concentration is 0.3mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixture is 3:1;

[0025] 2) Let the precursor solution A stand for 24 hours, and then spin-coat the static precursor solution A on the FTO / glass substrate, bake it at 200 °C for 8 minutes to obtain a dry film, and then anneal it at 550 °C for 10 minutes. Tb-doped...

Embodiment 2

[0032] 1) Put Bi(NO 3 ) 3 ·5H 2 O, Fe (NO 3 ) 3 ·9H 2 O and Tb (NO 3 ) 3 ·6H 2 O was dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.91:1:0.14, and stirred for 2 h to make it uniform to obtain precursor solution A; 3 ) 3 ·5H 2 O, Fe (NO 3 ) 3 ·9H 2 O and Sm (NO 3 ) 3 ·6H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.90:1:0.15, and stirred for 2 hours to make it uniform to obtain precursor solution B; wherein, the total metal ions in precursor solution A and precursor solution B are The concentration is 0.5mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixture is 1:1;

[0033] 2) Let the precursor solution A stand for 28 hours, and then spin-coat the static precursor solution A on the FTO / glass substrate, bake it at 180 °C for 10 minutes to obtain a dry film, and then anneal it at 550 °C for 8 minutes to obtain a dry f...

Embodiment 3

[0037] 1) Put Bi(NO 3 ) 3 ·5H 2 O, Fe (NO 3 ) 3 ·9H 2 O and Tb (NO 3 ) 3 ·6H 2 O was dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.97:1:0.08, stirred for 2 h to make it uniform, and obtained precursor solution A; 3 ) 3 ·5H 2 O, Fe (NO 3 ) 3 ·9H 2 O and Sm (NO 3 ) 3 ·6H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.97:1:0.08, and stirred for 2 hours to make it uniform to obtain precursor solution B; wherein, the total metal ions in precursor solution A and precursor solution B are The concentration is 0.1mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixture is 4:1;

[0038] 2) Let the precursor solution A stand for 32 hours, and then spin-coat the standing precursor solution A on the FTO / glass substrate, bake it at 260 °C for 12 minutes to obtain a dry film, and then anneal it at 550 °C for 9 minutes to obtain a dry...

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Abstract

The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO / glass substrate by way of spin coating, baking and annealing the FTO / glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a layer-by-layer alternately doped low leakage current BiFeO 3 Films and methods of making the same. Background technique [0002] In recent years, BiFeO 3 As the representative multiferroic compound system, there has been a worldwide research upsurge in single-phase multiferroic magnetoelectric materials. It possesses both ferroelectric and antiferromagnetic order at room temperature, due to its high ferroelectric phase transition temperature (T C =1103K) and magnetic phase transition temperature (T N =643K), so BiFeO 3 It has become an important functional material that can be widely used in the fields of microelectronics, optoelectronics, integrated optics and microelectromechanical systems. [0003] BiFeO 3 The biggest problem with thin films is their low resistivity, which makes it impossible to measure their ferroelectric properties at room temperature. On the one...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强董国华罗洋洋
Owner 盐城市鹤业实业投资有限公司
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