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48results about How to "Easy to dope and modify" patented technology

Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof

The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO / glass substrate by way of spin coating, baking and annealing the FTO / glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.
Owner:盐城市鹤业实业投资有限公司

Method for preparing high curie point piezoelectric using water base sol-gel method

The present invention belongs to the field of piezoelectric film material preparing technology, and is water base sol-gel process of preparing high Curie point piezoelectric film. Tetrabutyl titanate and nitrate and acetate of other metal cation as main material and glacial acetic acid and deionized water as main solvent are first prepared into stable sol; and the sol is coated and fast annealed to form the piezoelectric film with compact structure and homogeneous components. The piezoelectric film has excellent piezoelectric performance, Curie point as high as 435 deg.c, crystal grain size of 20-100 nm, effective piezoelectric coefficient d33*of about 80 pC / N, comparable with that of the PZT film, and thickness controllable in 0.15-1 micron. The piezoelectric film is suitable for various piezoelectric ferrite elements and devices used in high temperature, and may find wide application in space, automobile and other industrial fields.
Owner:TSINGHUA UNIV

Method for preparing high-conductivity carbon material by virtue of hydrothermal method

InactiveCN104445138AOvercome the defect of insoluble in waterAbundant raw materials are cheap, environmentally friendly and easy to getSolventVacuum drying
The invention discloses a method for preparing a high-conductivity carbon material by virtue of a hydrothermal method. The method is characterized by comprising the following steps: by taking carboxymethyl cellulose as a raw material and taking pure water as a solvent, performing one-step high-temperature high-pressure hydrothermal treatment on a doping nitrogen source, and performing centrifugal separation, thereby obtaining a deep brown solid product; washing the brown solid product until the filtrate is clarified by using distilled water and absolute ethyl alcohol, performing vacuum drying, and performing high-temperature activation and pyrolysis on the obtained product, thereby obtaining a graphite-like structure carbon material with high nitrogen doping content and developed porous structure, wherein the carbon material has high conductivity and has potential application values in the field of preparation of lithium ion batteries and super-capacitors. The operation process has the main characteristics that the carboxymethyl cellulose is taken as the raw material and is environment-friendly, low in price and readily available, the nitrogen source is doped into carbon in the form of functional groups such as amino, pyridone and pyridine after the hydrothermal reaction and is subjected to high-temperature activation treatment so as to exist in a stable graphite nitrogen form, the graphite-like structure carbon material with high specific surface area and developed porous structure is generated, and high conductivity is promoted. The nitrogen source and the activation conditions are changed, so that carbon materials of different nitrogen doping amounts and pore structures can be controlled to be prepared, the conductivity is further adjusted, the highest conductivity of the prepared material can reach 120-166Sm<-1>, the method is simple and performance is excellent.
Owner:NORTHEAST FORESTRY UNIVERSITY +1

Method for finely synthesizing ilmenite-structured ZnTiO3 nano powder by using water-soluble sol-gel process

The invention belongs to the technical field of electronic ceramic preparation and application, and in particular relates to a method for finely synthesizing ilmenite-structured ZnTiO3 series microwave dielectric ceramic nano powder by using a water-soluble sol-gel process. The method comprises the following steps: 1) preparing a citric acid solution of Zn ions; 2) preparing a citric acid solution of Ti; 3) synthesizing a ZnTiO3 microwave dielectric ceramic nano precursor. As oxides and inorganic nitrate which are low in price are taken as raw materials, and expensive alkoxides are not used, the synthesized powder has the remarkable advantages that the synthesis temperature is low, the ceramic particles are uniform, good dispersity is achieved, the phase is pure, various elements can be finely doped and modified, the prepared powder has the nano particle size (about 30nm), is high in specific surface property and is relatively high in activity, later low-temperature sintering can be achieved, and LTCC application requirements can be possibly met.
Owner:JINAN WEIBO NEW MATERIAL

Bi0.90Ho0.10Fe1-XMnXO3 ferroelectric film with high remanent polarization and preparation method thereof

The invention relates to a Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and a preparation method thereof, wherein x is equal to 0.01-0.05, and the film is of a distorted perovskite structure, has a diamond crystal system and has good uniformity, remanent polarization of 78-108 muC / cm<2>, and a dielectric constant of 196.2-271.8. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate, holmium nitrate and manganese acetate in a mixture prepared by mixing ethylene glycol monomethyl ether and acetic anhydride to obtain a precursor solution; spin-coating the precursor solution on a substrate, coating glue evenly, then baking to obtain a dry film, then annealing to obtain a Bi0.90Ho0.10Fe1-xMnXO3 film, and repeatedly spin-coating the precursor solution, baking and annealing to achieve the required film thickness to obtain the film. According to the Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and the preparation method thereof, the requirements for equipment are simple, the doping amount is easy to control, and the ferroelectric properties of the BiFeO3 film can be greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH

Method for making lithium-included pole material with inter-metal compound of multi-element metal

The invention relates to a method for preparing a lithium-containing electrode material with a multi-metal intermetallic compound, in particular to the method for preparing a Li-ion battery and a multiple composite electrode material of a super-capacitor and belongs to the materials and electrochemistry field. The multi-metal intermetallic compound comprises at least two kinds of metallic elements at the same time, is allowed to comprise other non-metallic elements as impurities, provides partial or all metals for the electrode materials and can be minerals, smelt products of the minerals, by-products or recycling products in chemical industry, or can be self-made. Compared with the prior art, the raw material adopted in the method is wide in range, simple in synthesizing process, low in price, short in reaction process and easy to obtain; in-situ self-doped modification can be carried out on the electrode material with the self-contained impurities, the cycling efficiency and utilization rate of resources are very notable and the electrode material is low in cost and practical, which brings convenience to the scaled industry cleaning production and is favorable for decreasing consumption, saving energy and the comprehensive utilization of resources.
Owner:SICHUAN UNIV

Coating resistant to high temperature, high humidity and oxygen corrosion and preparation method thereof

The invention discloses a coating resistant to high temperature, high humidity and oxygen corrosion and a preparation method thereof. The coating resistant to high temperature, high humidity and oxygen corrosion is arranged on the surface of a ceramic matrix composite substrate, and comprises a bonding layer and an RE2X2O7 surface layer, wherein the bonding layer is one of Si, SiO2 and SiC, the RE2X2O7 surface layer is of a pyrochlore type crystal structure, wherein RE is La or Sm, and X is Zr or Hf. The preparation method comprises the following steps: (1) preparing a bonding layer suspension; (2) preparing an RE2X2O7 suspension; (3) preparing a bonding layer preformed layer; (4) preparing an RE2X2O7 surface layer preformed layer; and (5) preparing the coating resistant to high temperature, high humidity and oxygen corrosion. The coating resistant to high temperature, high humidity and oxygen corrosion disclosed by the invention is good in thermal matching performance with the substrate, and capable of stably working for a long time in a strong-oxidizing / corrosive fuel gas erosion environment; the preparation method has the advantages of being simple in equipment, fast to form and the like; the prepared coating is high in bonding strength with the substrate.
Owner:NAT UNIV OF DEFENSE TECH

Method for preparing pyrochlore structure Bi2Ti2O7 ceramic by means of solid-phase reaction approach

The invention discloses a method for preparing bismuth titanate (Bi2Ti2O7) ceramic of a pyrochlore structure by means of a solid-phase reaction approach. The method includes the following steps of mixing appropriately excessive TiO2 and Bi2O3,conducting pre-burning at certain temperature,conducting preforming,conducting sintering at the appropriate temperature,and then obtaining the Bi2Ti2O7 ceramic of the pyrochlore structure. The method has the advantage that the Bi2Ti2O7 ceramic of the mono-phase pyrochlore structure can be obtained by means of the conventional solid-phase reaction approach. The preparation mode is simple,the reaction conditions are mild,the cost is low,and the repeatability is high.
Owner:WUHAN INSTITUTE OF TECHNOLOGY

Method for preparing a complex oxygen ion conductor electrolyte film by quick heat treatment of collosol and gel

The invention relates to a method for preparing multilayer compound nano oxygen ion conductor electrolyte film material, adopting rapid heat treatment sol-gel methd to prepare a multilayer film A / (B / A)n (A and B stand for YSZ or RCO, n>=1), where the preparing process for each film layer: sole precursor preparing, spin-spreading coating, rapid heat treatment, and film forming, in which, YSZ film preparation adopts ZrOCl2. 8H2O and Y(NO3)3.6H2O, uses ammonia as precipitator, uses thin hydrochloric acid to regulate pH value of solution, and uses glycol as metal chelating agent and the YSZ film is 10-400 nm thick; RCO film preparation adopts Ce(NO3)3.6H2O and R2O3, uses oxalic acid as precipitator and citric acid as metal chelating agent, and the RCO film is 10-400 nm thick. Circulating the above steps can prepare uniformly thick, compact, high-quality multilayer compound nano electrolyte film, shortening film making cycle, raising the efficiency, and reducing the cost.
Owner:DALIAN UNIV OF TECH

BiFe1-XMnXO3 ferroelectric film with high remnant polarization and preparation method thereof

The invention discloses a BiFe1-XMnXO3 ferroelectric film with high remnant polarization and a preparation method thereof, and x is equal to 0.02-0.08. The BiFe1-XMnXO3 ferroelectric film is of a twisty perovskite structure, belongs to a rhombohedral system, and is good in uniformity. At the frequency of 1kHz, the remnant polarization is 100-130.4mu C / cm<2>. The preparation method comprises the steps of: dissolving bismuth nitrate, ferric nitrate and manganese acetate in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride according to a molar ratio of 1.05:(1-x) to obtain a precursor solution; and spinning the precursor solution on a substrate, homogenating and baking to obtain a dry film; annealing to obtain the BiFe1-XMnXO3 ferroelectric film, repeatedly carrying out the steps of spinning the precursor solution, baking, and annealing till a required film thickness is reached, thus obtainng the BiFe1-XMnXO3 ferroelectric film with high remnant polarization. The BiFe1-XMnXO3 ferroelectric film is simple in requirement of equipment, easily controllable in doping amount, and capable of greatly improving ferroelectric properties and dielectric properties of a BiFeO3 film.
Owner:SHAANXI UNIV OF SCI & TECH

Nb2O5 doped BaTiO3 substrate-type PTC thermal sensitive ceramic and preparation method thereof

InactiveCN108793995ABroaden the range of semiconductingEasy to dope and modifySubstrate typeDopant
The invention provides a Nb2O5 doped BaTiO3 substrate-type PTC thermal sensitive ceramic and a preparation method thereof. The constituent chemical formula of a sample is Bam(Ti1-xNbx)O3 and ySiO2, wherein m is equal to 0.994 mol%-1.018 mol%, x is equal to 0.2 mol%-0.8 mol%, y is equal to 0.01 mol%-0.10 mol%. A Nb2O5 doped BaTiO3 substrate-type PTC green body is prepared by adopting a wet-processcasting technology, a substrate-type PTC thermal sensitive ceramic is prepared by adopting a reducing-reoxidizing co-sintering technology, Nb2O5 is introduced to be used as a donor dopant by adoptinga B-bit donor replacing method to perform the doping modification and performance optimization of the sample to obtain a substrate-type PTC thermistor with relatively low resistance, sintering in a reducing atmosphere facilitates widening the semi-conducted interval of a main dopant, a substrate-type PTC thermal sensitive ceramic with high partial stoichiometric ratio (Ba / Ti ratio is within 1.003-1.006) is manufactured by optimizing and regulating the stoichiometric ratio of the sample, and therefore, relatively low room temperature resistance can be obtained, relatively higher lift-drag ratiocan be obtained, and the problem that low resistance and high lift-drag ratio of the sample contradict with each other is solved.
Owner:ZHAOQING UNIV

Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant

The invention provides a Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with a high dielectric constant, and a preparation method for the Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with the high dielectric constant. The film adopts a rhombohedral structure and has high homogeneity, the remanent polarization ranges from 59.3 [mu]C / cm<2> to 95.2 [mu]C / cm<2>, the coercive field ranges from 280 kV / cm to 368 kV / cm, and the high dielectric constant ranges from 239.2 to 348.57. The preparation method includes the following steps: bismuth nitrate, ferric nitrate, dysprosium nitrate and manganese acetate are dissolved in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, so as to obtain a precursor; a substrate is spin-coated with the precursor; glue evening and baking are carried out in sequence to obtain a dry film; the dry film is annealed to obtain a Bi0.90Dy0.10Fe1-XMnxO3 film; the procedures of precursor spin-coating, baking and annealing are repeated until a required film thickness is reached, so that the film is obtained. The ferroelectric film has the advantages of simple equipment requirements and high controllability of the doping amount; the dielectric properties of a BiFeO3 (bismuth ferrite) film can be greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH

Hollow spherical strontium titanate powder and preparation method thereof

The invention provides hollow spherical strontium titanate powder. The inner diameter of the hollow spherical strontium titanate powder is 0.6-0.8 micron, and the outer diameter of the hollow spherical strontium titanate powder is 0.8-1.4 microns. A preparation method of the hollow spherical strontium titanate powder comprises the following steps: (1) preparing a precursor: hydrolyzing tetrabutyl titanate in ethanol or ethanol and ammonia water to form an amorphous spherical titanium source precursor; (2) preparing hollow spherical powder: weighing the precursor and strontium nitrate, pouring the precursor and strontium nitrate into a liner of a reaction kettle, adding water and a sodium hydroxide solution, stirring for a certain period of time, carrying out sealing, putting the liner into a drying oven, and carrying out hydrothermal reaction; and (3) cleaning and drying the powder: adjusting the pH value of a reaction system by virtue of the sodium hydroxide solution in the step (2), wherein the pH value of the mixed solution in the reaction system after the pH adjustment is more than or equal to 13 and less than or equal to 14. The hollow spherical strontium titanate powder has the characteristics that the powder is relatively easy to be doped, modified and semi-conducted, has relatively high catalytic efficiency and the like.
Owner:GUANGZHOU AURORA TECHNOLOGIES CO LTD

Method for preparing molybdenum trioxide nanowire by sol-gel method

The invention discloses a method for preparing molybdenum trioxide nanowires by a sol-gel method, and belongs to the technical field of preparation of molybdenum trioxide nanomaterials. The specific preparation method comprises the following steps: mixing anhydrous ammonium molybdate and anhydrous citric acid according to a molar ratio of 1: 3-1: 5 at room temperature, then dissolving the mixture in an organic solvent, and standing the obtained reaction system at room temperature to obtain a sol-gel precursor; and aging the sol-gel precursor, coating the sol-gel precursor on a silica glass substrate, and sintering to obtain the molybdenum trioxide nanowire film. The molybdenum trioxide nanowire with the orthogonal cubic structure is efficiently prepared by adopting a sol-gel method, and the preparation method is the simplest preparation method at present, has the characteristics of short time consumption, easiness in control, low cost and no pollution, has low requirements on experimental equipment, and is suitable for large-area preparation industry.
Owner:KUNMING UNIV OF SCI & TECH

B-site Mn and Ni co-doped high-remanent-polarization BiFeO3 film and preparation method thereof

The invention discloses a B-site Mn and Ni co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, manganese acetate and nickel acetate according to a molar ratio of 1.05:[(0.92-0.98)-x]:(0.02-0.08):x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride, uniformly stirring to obtain a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.03; spin coating the BiFeO3 precursor solution on a FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline state BiFeO3 film; repeatedly operating until the BiFeO3 film reaches the needed thickness after the crystalline state BiFeO3 film is cooled, thus obtaining the B-site Mn and Ni co-doped high-remanent polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH

Method for preparing modified titanium dioxide doped thin film

The invention relates to a method for preparing a modified titanium dioxide doped thin film. The invention solves such problems of existing titanium dioxide thin films as difficult doping modification, poor doping effect and poor binding force between the thin film obtained by the existing layer-by-layer self-assembly technique and a substrate. The method comprises the following steps: preparing an early modified titanium dioxide doped thin film by the layer-by-layer self-assembly technique, and then obtaining the modified titanium dioxide doped thin film by heat treatment. The method has advantages of stable and reliable process, simple equipment, easy operation and realizable doping modification. The titanium dioxide thin film obtained by the method has good doping modification effect, band gap of the titanium dioxide thin film decreases to 2.8eV, and the thin film is bound tightly to the substrate by alkylation treatment. The modified titanium dioxide doped thin film can be appliedto photocatalytic water decomposition for hydrogen production.
Owner:HARBIN INST OF TECH

Method for preparing NaxMnO2 electrode materials in large scale

A method for preparing NaxMnO2 electrode materials in a large scale comprises the following steps of: (1) mixing MnO2 with anhydrous NaNO3 according to a mass ratio of 0.5 to 2, and uniformly mixing the spherulitic graphite; (2) calcining the mixture obtained in the step (1) in a muffle furnace at a calcination temperature of 800 to 900 degrees centigrade for 5 to 10 hours; and (3) cleaning the compound obtained in the step (2) with deionized water and drying the compound. The method has a simple process, a low equipment requirement, good practicality and liable to achieve large-scale industrial production. The prepared NaxMnO2 has high Na content and excellent electrochemical performance, including an ultra-wide potential window of 0-1.3V (vs. Ag / AgCl), high specific capacitance 260 F g-1, and excellent rate performance and cycle stability. The method can prepare a NaxMnO2 electrode material with a special shape and a certain particle size and distribution by controlling a process condition.
Owner:NANCHANG UNIV

Bi(1-x)DyxFeO3 low leakage current film and preparation method thereof

The invention discloses a Bi(1-x)DyxFeO3 low leakage current film and a preparation method thereof. X is 0.09-0.12, the film is of a rhombohedral structure and good in uniformity, a space point group is R-3m(166), and the leakage current density is 1.01*10<-8> to 6.39*10<-9> A / cm<2> under the electric field of 117kV / cm. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and dysprosium nitrate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic anhydride in a mixing manner according to the molar ratio of (1.05-x):1:x, so as to obtain a precursor solution; spinning a substrate by the precursor solution, baking to obtain a dry film after spinning, and then annealing to obtain a Bi(1-x)DyxFeO3 film; repeatedly spinning the precursor solution, baking and annealing to the required film thickness, so as to obtain the Bi(1-x)DyxFeO3 low leakage current film. The film is simple in demands on equipment, and doping amount is easy to control, and the leakage current density of the Bi(1-x)DyxFeO3 film can be greatly reduced.
Owner:SHAANXI UNIV OF SCI & TECH

A bi1-xdyxfeo3 low-leakage current film and its preparation method

The invention discloses a Bi(1-x)DyxFeO3 low leakage current film and a preparation method thereof. X is 0.09-0.12, the film is of a rhombohedral structure and good in uniformity, a space point group is R-3m(166), and the leakage current density is 1.01*10<-8> to 6.39*10<-9> A / cm<2> under the electric field of 117kV / cm. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and dysprosium nitrate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic anhydride in a mixing manner according to the molar ratio of (1.05-x):1:x, so as to obtain a precursor solution; spinning a substrate by the precursor solution, baking to obtain a dry film after spinning, and then annealing to obtain a Bi(1-x)DyxFeO3 film; repeatedly spinning the precursor solution, baking and annealing to the required film thickness, so as to obtain the Bi(1-x)DyxFeO3 low leakage current film. The film is simple in demands on equipment, and doping amount is easy to control, and the leakage current density of the Bi(1-x)DyxFeO3 film can be greatly reduced.
Owner:SHAANXI UNIV OF SCI & TECH

A bifeo3 thin film with high remnant polarization intensity co-doped with b-site mn and ni and its preparation method

The invention discloses a B-site Mn and Ni co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, manganese acetate and nickel acetate according to a molar ratio of 1.05:[(0.92-0.98)-x]:(0.02-0.08):x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride, uniformly stirring to obtain a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.03; spin coating the BiFeO3 precursor solution on a FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline state BiFeO3 film; repeatedly operating until the BiFeO3 film reaches the needed thickness after the crystalline state BiFeO3 film is cooled, thus obtaining the B-site Mn and Ni co-doped high-remanent polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH

A kind of bifeo3 thin film with ternary co-doping of tb, cr and mn with high remnant polarization and its preparation method

The invention discloses a Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, chromic nitrate and manganese acetate according to a molar ratio of (0.91-0.97):(0.98-x):(0.08-0.14):0.02:x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride and uniformly stirring, thus obtaining a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.04; spin coating the BiFeO3 precursor solution on an FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline-state BiFeO3 film; and after the crystalline-state BiFeO3 film is cooled, repeating the operations until the BiFeO3 film reaches the needed thickness, thus obtaining the Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH

Preparation method of lithium vanadium manganese phosphate positive electrode material

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of a lithium vanadium manganese phosphate positive electrode material. The preparation method comprises the following steps: firstly, preparing a vanadium manganese phosphate precursor, wherein weighing initial raw materials including a manganese source compound, a vanadium source compound and a phosphorus source compound according to a molar ratio, mixing, pouring into a liquid-phase medium, and stirring on an automatic stirrer; adding ammonia water as a buffering agent into the stirred liquid, then adding sodium hydroxide to adjust the pH value, filtering out a precipitate after the precipitate appears in the liquid, repeatedly washing and drying, crushing, and dehydrating at high temperature to obtain a precursor; mixing the precursor subjected to high-temperature dehydration with a lithium source and a carbon source, and grinding and crushing; and sintering the dry powder material in an oxygen-free environment, and grinding to form a final product. The prepared lithium vanadium manganese phosphate is small in particle size, uniform in particle size distribution, easy to coat and dope and modify, excellent in performance, high in quality and stable in structure, and the material performance is better improved.lithium vanadium manganese phosphate positive electrode material.
Owner:天津斯科兰德科技有限公司

Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and preparation method thereof

The invention discloses a Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, chromic nitrate and manganese acetate according to a molar ratio of (0.91-0.97):(0.98-x):(0.08-0.14):0.02:x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride and uniformly stirring, thus obtaining a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.04; spin coating the BiFeO3 precursor solution on an FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline-state BiFeO3 film; and after the crystalline-state BiFeO3 film is cooled, repeating the operations until the BiFeO3 film reaches the needed thickness, thus obtaining the Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.
Owner:SHAANXI UNIV OF SCI & TECH

Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof

The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO / glass substrate by way of spin coating, baking and annealing the FTO / glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.
Owner:盐城市鹤业实业投资有限公司
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