Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Bi(1-x)DyxFeO3 low leakage current film and preparation method thereof

A leakage current, bi0.90dy0.10feo3 technology, applied in the field of Bi1-xDyxFeO3 low leakage current film and its preparation, can solve the problems of large leakage current and poor squareness of hysteresis loop of pure-phase BFO film, and achieve uniformity Good, the effect of reducing leakage current density

Active Publication Date: 2014-04-02
SHAANXI UNIV OF SCI & TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the leakage current of the pure-phase BFO film at room temperature is large, and the squareness of the hysteresis loop obtained is poor, so it cannot meet the requirements of device applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bi(1-x)DyxFeO3 low leakage current film and preparation method thereof
  • Bi(1-x)DyxFeO3 low leakage current film and preparation method thereof
  • Bi(1-x)DyxFeO3 low leakage current film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0027] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.91 Dy 0.09 FeO 3 film;

[0028] Step 3: Wait for Bi 0.91 Dy 0.09 FeO 3 After fi...

Embodiment 2

[0031] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0032] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.90 Dy 0.10 FeO 3 film;

[0033] Step 3: Wait for Bi 0.90 Dy 0.10 FeO 3 After fi...

Embodiment 3

[0036] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0037] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.88 Dy 0.12 FeO 3 film;

[0038] Step 3: Wait for Bi 0.88 Dy 0.12 FeO 3 After fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Leakage current densityaaaaaaaaaa
Grain sizeaaaaaaaaaa
Leakage current densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a Bi(1-x)DyxFeO3 low leakage current film and a preparation method thereof. X is 0.09-0.12, the film is of a rhombohedral structure and good in uniformity, a space point group is R-3m(166), and the leakage current density is 1.01*10<-8> to 6.39*10<-9> A / cm<2> under the electric field of 117kV / cm. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and dysprosium nitrate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic anhydride in a mixing manner according to the molar ratio of (1.05-x):1:x, so as to obtain a precursor solution; spinning a substrate by the precursor solution, baking to obtain a dry film after spinning, and then annealing to obtain a Bi(1-x)DyxFeO3 film; repeatedly spinning the precursor solution, baking and annealing to the required film thickness, so as to obtain the Bi(1-x)DyxFeO3 low leakage current film. The film is simple in demands on equipment, and doping amount is easy to control, and the leakage current density of the Bi(1-x)DyxFeO3 film can be greatly reduced.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a Bi 1-x Dy x FeO 3 Low leakage current thin film and its preparation method. Background technique [0002] As a typical single-phase multiferroic material, BiFeO 3 (BFO) is one of the few materials with both ferroelectricity and ferromagnetism at room temperature, due to the fact that BiFeO 3 have a ferroelectric Curie temperature above room temperature (T C ~1023K) and antiferromagnetic Neel temperature (T N ~643K), it has broad application prospects in information storage, spintronic devices, image display, pyroelectric effect, uncooled infrared focal plane array miniaturized integrated electronic devices, etc., which has set off a research boom. [0003] Currently used to prepare BiFeO 3 There are many methods of thin film, chemical vapor deposition (CVD), magnetron sputtering (rf magnetron sputtering), metal organic deposition (MOD), metal organic chemical vapor de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G49/00
Inventor 谈国强晏霞
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com