Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant, and preparation method for Bi0.90Dy0.10Fe1-XMnxO3 ferroelectric film with high dielectric constant
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHAANXI UNIV OF SCI & TECH
- Publication Date
- 2014-03-26
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Abstract
Description
technical field
[0001] The invention belongs to the field of functional materials, in particular to a high dielectric constant Bi 0.90 Dy 0.10 Fe 1-x mn x o 3 Ferroelectric thin film and its preparation method. Background technique
[0002] BiFeO 3 It is currently the only ferroelectric that has both ferroelectricity and G-type-weak ferromagnetism at room temperature, and has a high ferroelectric Curie temperature (T C ~1023K) and antiferromagnetic Neel temperature (T N ~643K). The coexistence of magnetism and ferroelectricity in BFO makes the multiferroic material not only can be used as a single ferroelectric material or magnetic material, but also the coupling effect of magnetism and electricity in the material makes the electric field in the material can induce magnetization, and the magnetic field can induce polarization. This feature has an attractive application prospect in the new memory element of magnetic reading and writing. For example, a magnetoelectri...