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A kind of bi0.92dy0.08fe1-xmnxo3 ferroelectric film with low coercive field and its preparation method

A technology of ferroelectric thin film and coercive field, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problems of high film leakage current, weak magnetism, large coercive field, etc., achieve good uniformity, improve Effects of Ferroelectric and Dielectric Properties

Active Publication Date: 2015-08-12
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, BiFeO prepared by metal-organic decomposition method 3 The leakage current of the film is high, the coercive field is large, the magnetism is weak, and the saturated P-E hysteresis loop can only be observed when the thickness is greater than 400nm

Method used

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  • A kind of bi0.92dy0.08fe1-xmnxo3 ferroelectric film with low coercive field and its preparation method
  • A kind of bi0.92dy0.08fe1-xmnxo3 ferroelectric film with low coercive field and its preparation method
  • A kind of bi0.92dy0.08fe1-xmnxo3 ferroelectric film with low coercive field and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0032] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.92 Dy 0.08 Fe 0.99 mn 0.01 o 3 film;

[0033] Step 3: ...

Embodiment 2

[0036] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0037]Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.92 Dy 0.08 Fe 0.98 mn 0.02 o 3 film;

[0038] Step 3: W...

Embodiment 3

[0041] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Dy(NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0042] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.92 Dy 0.08 Fe 0.97 mn 0.03 o 3 film;

[0043] Step 3: ...

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Abstract

The invention discloses a Bi0.92Dy0.08Fe(1-x)MnxO3 ferroelectric film with a low coercive field and a preparation method of the film. In Bi0.92Dy0.08Fe(1-x)MnxO3, x is 0.01-0.05; the film is of a rhombohedral structure and is good in uniformity; the residual polarization intensity is 58.27-69.87 muC / cm<2>; the coercive field is 318-448kV / cm; the dielectric constant is 214.4-260.6. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, dysprosium nitrate and manganese acetate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic oxide in a mixing manner, so as to obtain a precursor solution; spinning the precursor solution on a substrate; baking after spinning to obtain a dry film; annealing to obtain the Bi0.92Dy0.08Fe(1-x)MnxO3 film; repeatedly spinning the precursor solution, baking and annealing to achieve the required film thickness, so as to obtain the film. According to the invention, equipment requirements are simple, doping content is easy to control, and the ferroelectric properties of the BiFeO3 film can be greatly improved.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a Bi with low coercive field 0.92 Dy 0.08 Fe 1-x mn x o 3 Ferroelectric thin film and its preparation method. Background technique [0002] As a typical single-phase multiferroic perovskite material, BiFeO 3 It is one of the few ferroelectric properties at room temperature (Curie temperature T C ~1023K) and ferromagnetic (Neel temperature T N ~643K) materials, it has potential application prospects in information storage, spintronic devices, sensors and microelectromechanical systems. Currently used to prepare BiFeO 3 There are many methods of thin film, chemical vapor deposition (CVD), magnetron sputtering (rf magnetron sputtering), metal organic deposition (MOD), metal organic chemical vapor deposition (MOCVD), liquid phase deposition (LPD) ), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), sol-gel method (Sol-Gel), etc. However, BiFeO prepared by meta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强晏霞
Owner SHAANXI UNIV OF SCI & TECH
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