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Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and preparation method thereof

A polarization strength, high residual technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problems of low resistivity, limited application, low dielectric constant, etc., to improve ferroelectric and ferromagnetic properties , Improve the performance of multiferroics, enhance the effect of insulation

Active Publication Date: 2014-03-12
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluctuations in the valence state of Fe lead to a large leakage conductance, making BiFeO 3 The leakage current is large, and due to the large leakage conduction, the ferroelectricity cannot be measured correctly and saturation polarization is obtained
On the other hand, BiFeO 3 The properties of low dielectric constant and low resistivity make it difficult to observe the hysteresis loop
These characteristics greatly limit its application

Method used

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  • Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and preparation method thereof
  • Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and preparation method thereof
  • Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Tb(NO 3 ) 3 ·6H 2 O, Cr(NO 3 ) 3 9H 2 O and C 4 h 6 MnO 4 4H 2 O was dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride in a molar ratio of 0.94:0.97:0.11:0.02:0.01, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0026] 2) BiFeO 3 The precursor solution was left to stand for 24h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 12 minutes to obtain a dry film, and then rapidly annealed at 550°C for 8 minutes to obtain crystalline BiFeO 3 film.

[0027] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline BiFeO 3 fil...

Embodiment 2

[0029] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Tb(NO 3 ) 3 ·6H 2 O, Cr(NO 3 ) 3 9H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.94:0.96:0.11:0.02:0.02, and then stirred for 2h to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0030] 2) BiFeO 3 The precursor solution was left to stand for 32h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 6 minutes to obtain a dry film, and then rapidly annealed at 550°C for 13 minutes to obtain crystalline BiFeO 3 film.

[0031] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline Bi...

Embodiment 3

[0036] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Tb(NO 3 ) 3 ·6H 2 O, Cr(NO 3 ) 3 9H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.94:0.95:0.11:0.02:0.03, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0037] 2) BiFeO 3 The precursor solution was left to stand for 28h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 8 minutes to obtain a dry film, and then rapidly annealed at 550°C for 10 minutes to obtain crystalline BiFeO 3 film.

[0038] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalli...

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Abstract

The invention discloses a Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, chromic nitrate and manganese acetate according to a molar ratio of (0.91-0.97):(0.98-x):(0.08-0.14):0.02:x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride and uniformly stirring, thus obtaining a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.04; spin coating the BiFeO3 precursor solution on an FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline-state BiFeO3 film; and after the crystalline-state BiFeO3 film is cooled, repeating the operations until the BiFeO3 film reaches the needed thickness, thus obtaining the Tb, Cr and Mn ternary co-doped high-remanent-polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a BiFeO ternary co-doped with Tb, Cr and Mn with high remnant polarization 3 Ferroelectric thin film and its preparation method. Background technique [0002] In recent years, BiFeO 3 As the representative multiferroic compound system, a worldwide research boom of single-phase multiferroic magnetoelectric materials has been formed. It has both ferroelectric order and antiferromagnetic order at room temperature, due to its high ferroelectric phase transition temperature (T C =1103K) and magnetic phase transition temperature (T N =643K). Therefore BiFeO 3 It has become an important functional material that can be widely used in the fields of microelectronics, optoelectronics, integrated optics and microelectromechanical systems. [0003] BiFeO 3 The biggest problem with thin films is their low resistivity, which makes it impossible to measure their ferroelectric propertie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00C04B35/26C04B35/624
Inventor 谈国强董国华罗洋洋
Owner SHAANXI UNIV OF SCI & TECH
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