A bi1-xhoxfeo3 ferroelectric thin film with high dielectric constant and preparation method thereof

A technology of bi1-xhoxfeo3 and high dielectric constant, applied in the field of high dielectric constant Bi1-xHoxFeO3 ferroelectric film and its preparation, can solve the problems that limit the application of BiFeO3, achieve precise and controllable chemical composition, and effectively enhance insulation , the effect of reducing oxygen vacancies

Active Publication Date: 2015-08-12
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These all severely limit the BiFeO 3 Applications

Method used

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  • A bi1-xhoxfeo3 ferroelectric thin film with high dielectric constant and preparation method thereof
  • A bi1-xhoxfeo3 ferroelectric thin film with high dielectric constant and preparation method thereof
  • A bi1-xhoxfeo3 ferroelectric thin film with high dielectric constant and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally use nitrogen blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, then take it out and let it stand at room temperature. Finally, the clean FTO / glass substrate was placed in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0033] Step 2: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Ho(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion c...

Embodiment 2

[0038] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally use nitrogen blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, then take it out and let it stand at room temperature. Finally, the clean FTO / glass substrate was placed in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0039] Step 2: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Ho(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion c...

Embodiment 3

[0044] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally use nitrogen blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, take it out and let it stand at room temperature. Finally, the clean FTO / glass substrate was placed in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0045] Step 2: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Ho(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concen...

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Abstract

The invention discloses a Bi[1-X]HoXFeO3 ferroelectric film with a high dielectric constant and a preparation method of the film. According to the invention, in the Bi[1-X]HoXFeO3, X is 0.04-0.12; the film has a twisty perovskite structure, is in rhombohedral system and good in uniformity, has spatial point group of R-3m(160), and has a dielectric constant of 199.3-299.0 under the frequency of 1kHz. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and holmium nitrate into a mixed liquid of ethylene glycol monomethyl ether and acetic anhydride in a mole ratio of (1.05-x):1:x to obtain a precursor liquid; carrying out spin coating on a substrate with the precursor liquid, roasting after uniformly dividing glue, and then annealing to obtain the Bi[1-X]HoXFeO3 film; and repeatedly carrying out spin coating, roasting and annealing until required film thickness is achieved, thereby obtaining the Bi[1-X]HoXFeO3 ferroelectric film with the high dielectric constant. According to the invention, equipment requirement is simple, doped amount is easy to control, and the dielectric property of the BiFeO3 film can be greatly improved.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a high dielectric constant Bi 1-x Ho x FeO 3 Ferroelectric thin film and its preparation method. Background technique [0002] As a typical single-phase multiferroic material, pure-phase bismuth ferrite (BiFeO 3 ) has a perovskite structure and is one of the few multiferroic materials that have both ferroelectricity and antiferromagnetism at room temperature. Its ferroelectric Curie temperature is 850°C, and the antiferromagnetic Neel temperature is 370°C. BiFeO 3 Thin films, as a typical ferromagnetic material, have attracted more and more researchers' attention. Using its high dielectric constant and magnetic permeability to make electronic components with high capacitance and large inductance, it is used to reduce the number of devices on high-density circuit boards and solve the problem of mutual interference between inductive and capacitive devices. Using its magnet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强耶维
Owner SHAANXI UNIV OF SCI & TECH
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