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A bi1-xdyxfeo3 film with high dielectric constant and preparation method thereof

A technology with high dielectric constant and dielectric constant, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problem that it is difficult to observe the hysteresis loop, it is difficult to prepare a pure phase, and the film has a large leakage current and other problems, to achieve the effect of precise and controllable film chemical composition, easy control of doping amount, and increased dielectric constant

Active Publication Date: 2015-07-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, BiFeO 3 Its nature determines that it is difficult to prepare a pure phase, and a saturated hysteresis loop is observed
On the one hand, due to the BiFeO 3 During the annealing process of the film, the Bi 3+ Volatilization of ions and Fe 3+ to Fe 2+ Oxygen vacancies formed by fluctuations lead to a large leakage current in the film; on the other hand, BiFeO 3 The properties of low dielectric constant and low resistivity make it difficult to observe the hysteresis loop
These characteristics greatly limit its application

Method used

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  • A bi1-xdyxfeo3 film with high dielectric constant and preparation method thereof
  • A bi1-xdyxfeo3 film with high dielectric constant and preparation method thereof
  • A bi1-xdyxfeo3 film with high dielectric constant and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0032] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0033] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.94 Dy 0.06 FeO 3 film;

[0034] Step 3: Wait for Bi 0.94 Dy 0.06 FeO 3 After fi...

Embodiment 2

[0037] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0038] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.92 Dy 0.08 FeO 3 film;

[0039] Step 3: Wait for Bi 0.92 Dy 0.08 FeO 3 After fi...

Embodiment 3

[0045] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3.5:1, and the total The metal ion concentration is 0.25mol / L;

[0046] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 3800r / min for 15s. After the glue is finished, bake it at 180°C for 8 minutes to obtain a dry film, and then quickly anneal it at 540°C for 8 minutes to obtain Bi 0.93 Dy 0.07 FeO 3 film;

[0047] Step 3: Wait for Bi 0.93 Dy 0.07 FeO 3 After film cooling, the Bi 0.93...

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Abstract

The invention relates to a high-dielectric-constant Bi[1-x]DyxFeO3 film (x=0.06-0.08) and a preparation method thereof. The film is in a rhombohedral structure and has favorable uniformity; the space point group is R-3m(166); and under the frequency of 1kHz, the dielectric constant is 152.8-241.6. The preparation method comprises the following steps: dissolving bismuth nitrate, iron nitrate and dysprosium nitrate in an ethylene glycol monomethyl ether-acetic anhydride mixed solution in a mole ratio of (1.05-x):1:x to obtain a precursor solution; evenly spin-coating the precursor solution on a substrate, baking to obtain a dry film, and annealing to obtain a Bi[1-x]DyxFeO3 film; and spin-coating the precursor solution again, baking and annealing to the required film thickness, thereby obtaining the high-dielectric-constant Bi[1-x]DyxFeO3 film. The method has the advantages of simple facility request and controllable doping amount, and can greatly enhance the dielectric properties of the BiFeO3 film.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a high dielectric constant Bi 1-x Dy x FeO 3 Thin films and methods for their preparation. Background technique [0002] In recent years, BiFeO 3 As a new type of ferromagnetoelectric material, it has ferroelectricity and antiferromagnetism, accompanied by weak ferromagnetism, which has attracted great interest. BiFeO 3 Simple perovskite structure with trigonal twist and simultaneous ferroelectric order at room temperature (T C ~1023K) and G-type antiferromagnetic order (T N ~643K), is one of the few single-phase multiferroic materials. Ferroelectric thin films have become important functional materials that can be widely used in the fields of microelectronics, optoelectronics, integrated optics, and microelectromechanical systems due to their good ferroelectric, piezoelectric, and dielectric properties. [0003] Currently used to prepare BiFeO 3 There are many method...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强晏霞
Owner SHAANXI UNIV OF SCI & TECH
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