A bi1-xdyxfeo3 low-leakage current film and its preparation method

A technology of leakage current and thin film, which is applied in the field of Bi1-xDyxFeO3 low leakage current thin film and its preparation, can solve the problems of poor hysteresis loop squareness and large leakage current of pure-phase BFO thin film, and achieve good uniformity and reduced Effect of Leakage Current Density

Active Publication Date: 2015-11-11
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the leakage current of the pure-phase BFO film at room temperature is large, and the squareness of the hysteresis loop obtained is poor, so it cannot meet the requirements of device applications.

Method used

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  • A bi1-xdyxfeo3 low-leakage current film and its preparation method
  • A bi1-xdyxfeo3 low-leakage current film and its preparation method
  • A bi1-xdyxfeo3 low-leakage current film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0027] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.91 Dy 0.09 FeO 3 film;

[0028] Step 3: Wait for Bi 0.91 Dy 0.09 FeO 3 After fi...

Embodiment 2

[0031] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0032] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.90 Dy 0.10 FeO 3 film;

[0033] Step 3: Wait for Bi 0.90 Dy 0.10 FeO 3 After fi...

Embodiment 3

[0036] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Dy(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution The metal ion concentration is 0.3mol / L;

[0037] Step 2: Clean and dry the FTO / glass substrate first, and then irradiate it with ultraviolet light to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate by spin coating To prepare a wet film, mix the glue at a speed of 4000r / min for 12s. After the glue is finished, bake it at 200°C for 10 minutes to obtain a dry film, and then quickly anneal it at 550°C for 9 minutes to obtain Bi 0.88 Dy 0.12 FeO 3 film;

[0038] Step 3: Wait for Bi 0.88 Dy 0.12 FeO 3 After fi...

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Abstract

The invention discloses a Bi(1-x)DyxFeO3 low leakage current film and a preparation method thereof. X is 0.09-0.12, the film is of a rhombohedral structure and good in uniformity, a space point group is R-3m(166), and the leakage current density is 1.01*10<-8> to 6.39*10<-9> A / cm<2> under the electric field of 117kV / cm. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate and dysprosium nitrate into a mixed solution prepared from ethylene glycol monomethyl ether and acetic anhydride in a mixing manner according to the molar ratio of (1.05-x):1:x, so as to obtain a precursor solution; spinning a substrate by the precursor solution, baking to obtain a dry film after spinning, and then annealing to obtain a Bi(1-x)DyxFeO3 film; repeatedly spinning the precursor solution, baking and annealing to the required film thickness, so as to obtain the Bi(1-x)DyxFeO3 low leakage current film. The film is simple in demands on equipment, and doping amount is easy to control, and the leakage current density of the Bi(1-x)DyxFeO3 film can be greatly reduced.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a Bi 1-x Dy x FeO 3 Low leakage current thin film and its preparation method. Background technique [0002] As a typical single-phase multiferroic material, BiFeO 3 (BFO) is one of the few materials with both ferroelectricity and ferromagnetism at room temperature, due to the fact that BiFeO 3 have a ferroelectric Curie temperature above room temperature (T C ~1023K) and antiferromagnetic Neel temperature (T N ~643K), it has broad application prospects in information storage, spintronic devices, image display, pyroelectric effect, uncooled infrared focal plane array miniaturized integrated electronic devices, etc., which has set off a research boom. [0003] Currently used to prepare BiFeO 3 There are many methods of thin film, chemical vapor deposition (CVD), magnetron sputtering (rfmagnetronsputtering), metal organic deposition (MOD), metal organic chemical vapor depo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强晏霞
Owner SHAANXI UNIV OF SCI & TECH
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