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Bismuth sodium titanate base and barium titanate base multilayer composite piezoelectric film and preparation method thereof

A sodium bismuth titanate-based, composite piezoelectric technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc., to achieve low loss and superior applications The effect of foreground, low leakage conductance

Inactive Publication Date: 2016-03-30
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no report on the preparation and performance of multilayer heterostructure thin film materials composed of BNT-based and BT-based lead-free piezoelectric materials 2-2.

Method used

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  • Bismuth sodium titanate base and barium titanate base multilayer composite piezoelectric film and preparation method thereof
  • Bismuth sodium titanate base and barium titanate base multilayer composite piezoelectric film and preparation method thereof
  • Bismuth sodium titanate base and barium titanate base multilayer composite piezoelectric film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] In this example, a bismuth sodium titanate-based and barium titanate-based multilayer composite piezoelectric film with a heterostructure cycle period of 0 is prepared. The specific experimental steps are as follows:

[0038] (1) According to the general chemical formula 0.755Bi 1 / 2 Na 1 / 2 TiO 3 -0.065BaTiO 3 -0.18SrTiO 3 Middle Bi 1 / 2 Na 1 / 2 TiO 3 Weigh raw materials, dissolve bismuth nitrate and sodium nitrate in glacial acetic acid, stir and heat to boiling for 10 minutes to prepare solution ①, dissolve titanium isopropoxide and complexing agent acetylacetone in ethylene glycol ethyl ether, 50°C Stir for 60 minutes to prepare solution ②, slowly add solution ② to solution ①, and control the solution concentration at 0.2mol / L, and stir at 50°C for 60 minutes to prepare precursor solution A;

[0039] (2) According to the general chemical formula 0.755Bi 1 / 2 Na 1 / 2 TiO 3 -0.065BaTiO 3 -0.18SrTiO 3 Medium BaTiO 3 The stoichiometric ratio of the raw material w...

Embodiment 2

[0048] In this example, bismuth sodium-based and barium titanate-based multilayer composite piezoelectric films with a heterogeneous structure cycle period of 1 were prepared. The specific experimental steps are as follows:

[0049] (1) According to the general chemical formula 0.755Bi 1 / 2 Na 1 / 2 TiO 3 -0.065BaTiO 3 -0.18SrTiO 3 Middle Bi 1 / 2 Na 1 / 2 TiO 3 Weigh raw materials, dissolve bismuth nitrate and sodium nitrate in glacial acetic acid, stir and heat to boiling for 10 minutes to prepare solution ①, dissolve titanium isopropoxide and complexing agent acetylacetone in ethylene glycol ethyl ether, 50°C Stir for 60 minutes to prepare solution ②, slowly add solution ② to solution ①, and control the solution concentration at 0.2mol / L, and stir at 50°C for 60 minutes to prepare precursor solution A;

[0050] (2) According to the general chemical formula BaTiO 3 The stoichiometric ratio of the raw material was weighed barium acetate and stirred and heated to boiling for ...

Embodiment 3

[0063] In this example, a bismuth sodium-based and barium titanate-based multilayer composite piezoelectric film with a heterogeneous structure with a cycle period of 2 is prepared. The specific experimental steps are as follows:

[0064] (1) According to the general chemical formula 0.755Bi1 / 2 Na 1 / 2 TiO 3 -0.065BaTiO 3 -0.18SrTiO 3 Middle Bi 1 / 2 Na 1 / 2 TiO 3 Weigh raw materials, dissolve bismuth nitrate and sodium nitrate in glacial acetic acid, stir and heat to boiling for 10 minutes to prepare solution ①, dissolve titanium isopropoxide and complexing agent acetylacetone in ethylene glycol ether, 70°C Stir for 60 minutes to prepare solution ②, slowly add solution ② to solution ①, and control the solution concentration at 0.2mol / L, and stir at 70°C for 60 minutes to prepare precursor solution A;

[0065] (2) According to the general chemical formula BaTiO 3 The stoichiometric ratio of the raw material was weighed barium acetate and stirred and heated to boiling for 5 ...

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Abstract

The invention relates to a sodium bismuth titanate-based and barium titanate-based multi-layer composite piezoelectric film, in which the general chemical formula of the sodium bismuth titanate-based material is Bi1 / 2Na1 / 2TiO3-xBaTiO3-ySrTiO3 (BNT-BT-ST), The general chemical formula of barium titanate-based material is Ba(1-x)CaxTi(1-y)SnyO3(BCTS). The multilayer structure is prepared by spin coating on Pt / Ti / SiO2 / Si substrate using sol-gel method. Composite lead-free piezoelectric film. Compared with the existing technology, the present invention obtains a high-performance sodium bismuth titanate-based and barium titanate-based multi-layer composite lead-free piezoelectric film with high voltage electrical activity, low loss and low leakage conduction, which can be used in micro actuators and drivers. The field has very good practical prospects.

Description

technical field [0001] The invention belongs to the field of electronic materials, and relates to a piezoelectric film material and a preparation method thereof, in particular to a bismuth sodium titanate-based and barium titanate-based multilayer composite piezoelectric film and a preparation method thereof. Background technique [0002] Piezoelectric ferroelectric materials are widely used in information detection, conversion, processing, display and storage, etc., and are important high-tech functional materials, but currently the dominant piezoelectric material is still lead with a lead content of up to 70%. The base piezoelectric material is lead zirconate titanate (PZT). Lead-based materials cause serious harm to the ecological environment and human health in the process of preparation, use and disposal. Therefore, the development of lead-free piezoelectric ferroelectric materials is one of the urgent tasks related to the sustainable development of electronic technolog...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/468C04B35/475H01L41/187H01L41/27H10N30/05H10N30/853
Inventor 翟继卫李伟
Owner TONGJI UNIV
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