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Preparation method of bi0.92tb0.08fe1-xcrxo3 film with low leakage current

A bi0.92tb0.08fe1, leakage current technology, applied in the field of functional materials, can solve problems such as restricting applications, and achieve the effects of improving multiferroic properties, precise and controllable chemical composition, and improved electrical properties

Active Publication Date: 2014-10-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These shortcomings greatly limit its application

Method used

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  • Preparation method of bi0.92tb0.08fe1-xcrxo3 film with low leakage current
  • Preparation method of bi0.92tb0.08fe1-xcrxo3 film with low leakage current
  • Preparation method of bi0.92tb0.08fe1-xcrxo3 film with low leakage current

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Step 1: Add Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O and Cr (NO 3 ) 3 ·9H 2 O mole ratio 0.97:0.99:0.08:0.01 is dissolved in the mixture of ethylene glycol methyl ether and acetic anhydride to form a mixed solution, and ethanolamine is added to the mixed solution to adjust the viscosity and the degree of complexation to obtain a stable BiFeO 3 Precursor fluid, among them, BiFeO 3 The concentration of metal ions in the precursor solution is 0.3 mol / L, and the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 3.5:1:0.2.

[0022] Step 2: Use spin coating and 550°C layer-by-layer annealing for 5-l0min, and then naturally cool to room temperature, to obtain Tb and Cr co-doped crystalline Bi 0.92 Tb 0.08 Fe 0.99 Cr 0.01 O 3 film.

[0023] With the addition of Tb and Cr into BiFeO 3 , Thus fictional BiFeO 3 Oxygen vacancies in the film due to changes in the valence state of Fe during heat treatment. At the same time Tb and Cr are...

Embodiment 2

[0025] Step 1: Add Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O and Cr (NO 3 ) 3 ·9H 2 O mole ratio 0.97: 0.98: 0.08: 0.02 is dissolved in the mixture of ethylene glycol methyl ether and acetic anhydride to form a mixed solution, and ethanolamine is added to the mixed solution to adjust the viscosity and the degree of complexation to obtain a stable BiFeO 3 Precursor fluid, among them, BiFeO 3 The concentration of metal ions in the precursor solution is 0.3 mol / L, and the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 3.5:1:0.2.

[0026] Step 2: Spin-coating and annealing layer by layer at 550°C for 5-10min, and then natural cooling to room temperature, to obtain Tb and Cr co-doped crystalline Bi 0.92 Tb 0.08 Fe 0.98 Cr 0.02 O 3 film.

[0027] With Tb and Cr doped into BiFeO at the same time 3 , Thus fictional BiFeO 3 Oxygen vacancies in the film due to changes in the valence state of Fe during heat treatment. At the same time Tb ...

Embodiment 3

[0029] Step 1: Add Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·9H 2 O, Tb(NO 3 ) 3 ·6H 2 O and Cr (NO 3 ) 3 ·9H 2 O mole ratio 0.97:0.97:0.08:0.03 is dissolved in the mixture of ethylene glycol methyl ether and acetic anhydride to form a mixed solution, and ethanolamine is added to the mixed solution to adjust the viscosity and the degree of complexation to obtain stable BiFeO 3 Precursor fluid, among them, BiFeO 3 The concentration of metal ions in the precursor solution is 0.3 mol / L, and the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 3.5:1:0.2.

[0030] Step 2: Spin-coating and annealing layer by layer at 550°C for 5-10min, and then naturally cooled to room temperature, to obtain Bi with Tb and Cr co-doped crystalline state 0.92 Tb 0.08 Fe 0.97 Cr 0.03 O 3 film.

[0031] With Tb and Cr doped into BiFeO at the same time 3 , Thus fictional BiFeO 3 Oxygen vacancies in the film due to changes in the valence state of Fe during heat treatment. At the same t...

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Abstract

The invention provides a preparation method of a low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and chromic nitrate at a molar ratio of 0.97:(1-x):0.08:x into the mixed solution of ethylene glycol monomethyl ether and acetic anhydride to form a mixed solution; adding ethanolamine into the mixed solution to adjust the viscosity and the complexing degree to obtain a stable BiFeO3 precursor liquid; and preparing a Tb and Cr co-doped crystalline BiFeO3 film by a spin-coating method and layer-by-layer annealing technology. The film is a crystalline Bi0.92Tb0.08Fe0.99Cr0.01O3 film, wherein the leakage current density is still kept below 10<-4>A / cm<2> in a 150kv / cm test electric field. According to the method provided by the invention, the requirements on equipment are simple, the experimental conditions are easy to realize, the prepared film has good uniformity, and the leakage current of the film is reduced through the co-doping of Tb and Cr.

Description

Technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of Tb and Cr co-doped low leakage current Bi on the surface of a functionalized FTO / glass substrate 0.92 Tb 0.08 Fe 1-x Cr x O 3 Film preparation method. Background technique [0002] BiFeO 3 It is one of the few single-phase multi-iron materials, with a twisted perovskite structure (belonging to the R3c point group), a rhomboid structure that deviates from the ideal perovskite structure formed by the cubic structure stretched along the (111) direction. It has both ferroelectric order and antiferromagnetic order at room temperature, due to the higher ferroelectric phase transition temperature (T C =1103K) and the magnetic phase transition temperature (T N =643K), it has a wide range of application prospects in magnetoelectric sensors, spintronic devices, memory, etc. and has attracted attention. [0003] BiFeO 3 The biggest problem with thin films is their low resistivi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/624C04B35/40
Inventor 谈国强董国华
Owner SHAANXI UNIV OF SCI & TECH
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