A kind of hosrmnni/hosrmnzn co-doped bismuth ferrite superlattice film and preparation method thereof

A superlattice, bismuth ferrite technology, applied in chemical instruments and methods, nickel compounds, liquid chemical plating, etc., to achieve the effects of easy control of the preparation process and doping amount, easy experimental conditions, and easy reaction.

Active Publication Date: 2019-01-25
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Currently, there is no information about Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.96 mn 0.03 Ni 0.01 o 3 / Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.95 mn 0.0 3 Zn 0.02 o 3 Related reports on superlattice thin films and their preparation methods

Method used

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  • A kind of hosrmnni/hosrmnzn co-doped bismuth ferrite superlattice film and preparation method thereof
  • A kind of hosrmnni/hosrmnzn co-doped bismuth ferrite superlattice film and preparation method thereof
  • A kind of hosrmnni/hosrmnzn co-doped bismuth ferrite superlattice film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.96:0.03:0.01 dissolved in volume ratio In the mixed solution of ethylene glycol methyl ether and acetic anhydride of 3:1, obtain the stable precursor solution A that the total concentration of metal ions is 0.3mol / L;

[0035] Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.95:0.03:0.02 and the volume ratio is 3: 1 in the mixed solution of ethylene glycol methyl ether and acetic anhydride, obtain the stable precursor solution B that the total concentration of metal ions is 0.3mol / L;

[0036] Step 2: Clean the FTO / glass substrate, and then irradiate it under ultraviolet light until the surface of the FTO / glass substrate reaches atomic...

Embodiment 2

[0044] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.96:0.03:0.01 dissolved in volume ratio In the mixed solution of ethylene glycol methyl ether and acetic anhydride of 1:1, obtain the stable precursor solution A that the total concentration of metal ions is 0.1mol / L;

[0045] Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and zinc nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.95:0.03:0.02 and the volume ratio is 1: 1 in the mixed solution of ethylene glycol methyl ether and acetic anhydride, obtain the stable precursor solution B that the total concentration of metal ions is 0.1mol / L;

[0046] Step 2: Clean the FTO / glass substrate, and then irradiate it under ultraviolet light until the surface of the FTO / glass substrate reaches atomic c...

Embodiment 3

[0050] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.96:0.03:0.01 dissolved in volume ratio In the mixed solution of ethylene glycol methyl ether and acetic anhydride of 2:1, obtain the stable precursor solution A that the total concentration of metal ions is 0.2mol / L;

[0051] Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.95:0.03:0.02 and the volume ratio is 2: 1 in the mixed solution of ethylene glycol methyl ether and acetic anhydride, obtain the stable precursor solution B that the total concentration of metal ions is 0.2mol / L;

[0052] Step 2: Clean the FTO / glass substrate, and then irradiate it under ultraviolet light until the surface of the FTO / glass substrate reaches atom...

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Abstract

The invention provides a HoSrMnNi / HoSrMnZn co-doped bismuth ferrite superlattice film and a preparation method of the HoSrMnNi / HoSrMnZn co-doped bismuth ferrite superlattice film. A different-element-doped bismuth ferrite film with a crystal structure being of a trigonal crystal structure and space groups being concomitant R3c:H and R3m:R is used for preparing a Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Ni0.01O3 / Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3 superlattice film, namely the HoSrMnNi / HoSrMnZn co-doped bismuth ferrite superlattice film. The sol-gel technology is adopted, spin coating and layer-by-layer annealing methods are adopted, equipment requirements are simple, the film is suitable for being prepared in a large surface or an irregularly-shaped surface, chemical constituents are accurate and controllable, and the multiferroic performance of a BiFeO3 film can be improved.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of HoSrMnNi / HoSrMnZn co-doped bismuth ferrite superlattice films on the surface of functionalized FTO / glass substrates, specifically Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.96 mn 0.03 Ni 0.01 o 3 / Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.95 mn 0.03 Zn 0.02 o 3 superlattice film. Background technique [0002] BiFeO 3 It is one of the few single-phase multiferroic materials with a twisted perovskite structure (belonging to the R3c point group), and a skewed hexagonal structure that deviates from the ideal perovskite structure formed by stretching the cubic structure along the (111) direction , has both ferroelectric order and antiferromagnetic order at room temperature, due to the higher ferroelectric phase transition temperature (Tc=1103K) and magnetic phase transition temperature (T N =643K), it has wide application prospects in magnetoelectric sensors, spintronic device...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12C23C18/04C01G53/00C01G45/00
CPCC01G45/006C01G53/006C01P2002/72C23C18/04C23C18/1204C23C18/1295
Inventor 谈国强郭美佑杨玮刘云任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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